Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN

We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Schottky barrier height of the as-deposited Pd/Ru contact is found to be 0.67 eV (I-V) and 0.79 eV (C-V), respectively. Measurements showed that the Schottky barrier height increased from 0.68 eV (I-V) and 0.80 eV (C-V) to 0.80 eV (I-V) and 0.96 eV (C-V) as the annealing temperature is varied from 200 °C to 300 °C. Upon annealing at 400 °C and 500 °C, the Schottky barrier height decreased to 0.73 eV (I-V) and 0.85 eV (C-V) and 0.72 eV (I-V) and 0.84 eV (C-V), respectively. It is noted that the barrier height further decreased to 0.59 eV (I-V) and 0.72 eV (C-V) when the contact is annealed at 600 °C. The change of Schottky barrier heights and ideality factors with annealing temperature may be due to the formation of interfacial compounds at the Ru/Pd/n-GaN interface. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2788

Enhancement of critical current density and vortex activation energy in proton-irradiated Co-doped BaFe2As2

The effect of proton irradiation in Ba(Fe0.93Co0.07)2As2 single crystals is reported. We analyze temperature dependence of current density and normalized flux relaxation rate in the framework of collective creep model. Glassy exponent and barrier height for flux creep are directly determined by Maley's method. Our model functions for barrier height and critical current density in the absence of flux creep are explained by the superposition of \deltaTc- and \deltal-pinning. We also approach true critical current density by means of generalized inversion scheme, and the obtained result is in reasonable agreement with our model function. Proton irradiation effect on temperature dependence of current density and normalized relaxation rate can be summarized as doubling of barrier height at the beginning of flux creep.Comment: 6 pages, 4 figures. To be published in Phys. Rev.

Free Energy Barrier for Electric Field Driven Polymer Entry into Nanoscale Channels

Free energy barrier for entry of a charged polymer into a nanoscale channel by a driving electric field is studied theoretically and using molecular dynamics simulations. Dependence of the barrier height on the polymer length, the driving field strength, and the channel entrance geometry is investigated. Squeezing effect of the electric field on the polymer before its entry to the channel is taken into account. It is shown that lateral confinement of the polymer prior to its entry changes the polymer length dependence of the barrier height noticeably. Our theory and simulation results are in good agreement and reasonably describe related experimental data

Theoretical studies of the potential surface for the F - H2 greater than HF + H reaction

The F + H2 yields HF + H potential energy hypersurface was studied in the saddle point and entrance channel regions. Using a large (5s 5p 3d 2f 1g/4s 3p 2d) atomic natural orbital basis set, a classical barrier height of 1.86 kcal/mole was obtained at the CASSCF/multireference CI level (MRCI) after correcting for basis set superposition error and including a Davidson correction (+Q) for higher excitations. Based upon an analysis of the computed results, the true classical barrier is estimated to be about 1.4 kcal/mole. The location of the bottleneck on the lowest vibrationally adiabatic potential curve was also computed and the translational energy threshold determined from a one-dimensional tunneling calculation. Using the difference between the calculated and experimental threshold to adjust the classical barrier height on the computed surface yields a classical barrier in the range of 1.0 to 1.5 kcal/mole. Combining the results of the direct estimates of the classical barrier height with the empirical values obtained from the approximation calculations of the dynamical threshold, it is predicted that the true classical barrier height is 1.4 + or - 0.4 kcal/mole. Arguments are presented in favor of including the relatively large +Q correction obtained when nine electrons are correlated at the CASSCF/MRCI level