133 research outputs found
DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored. The existing modeling tools, however, cover only a few memory technologies, technology nodes and fabrication approaches. We present DESTINY, a tool for modeling 2D/3D memories designed using SRAM, resistive RAM (ReRAM), spin transfer torque RAM (STT-RAM), phase change RAM (PCM) and embedded DRAM (eDRAM) and 2D memories designed using spin orbit torque RAM (SOT-RAM), domain wall memory (DWM) and Flash memory. In addition to single-level cell (SLC) designs for all of these memories, DESTINY also supports modeling MLC designs for NVMs. We have extensively validated DESTINY against commercial and research prototypes of these memories. DESTINY is very useful for performing design-space exploration across several dimensions, such as optimizing for a target (e.g., latency, area or energy-delay product) for a given memory technology, choosing the suitable memory technology or fabrication method (i.e., 2D v/s 3D) for a given optimization target, etc. We believe that DESTINY will boost studies of next-generation memory architectures used in systems ranging from mobile devices to extreme-scale supercomputers. The latest source-code of DESTINY is available from the following git repository: https://bitbucket.org/sparsh_mittal/destiny_v2
Doctor of Philosophy in Computing
dissertationThe demand for main memory capacity has been increasing for many years and will continue to do so. In the past, Dynamic Random Access Memory (DRAM) process scaling has enabled this increase in memory capacity. Along with continued DRAM scaling, the emergence of new technologies like 3D-stacking, buffered Dual Inline Memory Modules (DIMMs), and crosspoint nonvolatile memory promise to continue this trend in the years ahead. However, these technologies will bring with them their own gamut of problems. In this dissertation, I look at the problems facing these technologies from a current delivery perspective. 3D-stacking increases memory capacity available per package, but the increased current requirement means that more pins on the package have to be now dedicated to provide Vdd/Vss, hence increasing cost. At the system level, using buffered DIMMs to increase the number of DRAM ranks increases the peak current requirements of the system if all the DRAM chips in the system are Refreshed simultaneously. Crosspoint memories promise to greatly increase bit densities but have long read latencies because of sneak currents in the cross-bar. In this dissertation, I provide architectural solutions to each of these problems. We observe that smart data placement by the architecture and the Operating System (OS) is a vital ingredient in all of these solutions. We thereby mitigate major bottlenecks in these technologies, hence enabling higher memory densities
Improving Performance and Endurance for Crossbar Resistive Memory
Resistive Memory (ReRAM) has emerged as a promising non-volatile memory technology that may replace a significant portion of DRAM in future computer systems. When adopting crossbar architecture, ReRAM cell can achieve the smallest theoretical size in fabrication, ideally for constructing dense memory with large capacity. However, crossbar cell structure suffers from severe performance and endurance degradations, which come from large voltage drops on long wires.
In this dissertation, I first study the correlation between the ReRAM cell switching latency and the number of cells in low resistant state (LRS) along bitlines, and propose to dynamically speed up write operations based on bitline data patterns. By leveraging the intrinsic in-memory processing capability of ReRAM crossbars, a low overhead runtime profiler that effectively tracks the data patterns in different bitlines is proposed. To achieve further write latency reduction, data compression and row address dependent memory data layout are employed to reduce the numbers of LRS cells on bitlines. Moreover, two optimization techniques are presented to mitigate energy overhead brought by bitline data patterns tracking.
Second, I propose XWL, a novel table-based wear leveling scheme for ReRAM crossbars and study the correlation between write endurance and voltage stress in ReRAM crossbars. By estimating and tracking the effective write stress to different rows at runtime, XWL chooses the ones that are stressed the most to mitigate.
Additionally, two extended scenarios are further examined for the performance and endurance issues in neural network accelerators as well as 3D vertical ReRAM (3D-VRAM) arrays. For the ReRAM crossbar-based accelerators, by exploiting the wearing out mechanism of ReRAM cell, a novel comprehensive framework, ReNEW, is proposed to enhance the lifetime of the ReRAM crossbar-based accelerators, particularly for neural network training. To reduce the write latency in 3D-VRAM arrays, a collection of techniques, including an in-memory data encoding scheme, a data pattern estimator for assessing cell resistance distributions, and a write time reduction scheme that opportunistically reduces RESET latency with runtime data patterns, are devised
Design Guidelines for High-Performance SCM Hierarchies
With emerging storage-class memory (SCM) nearing commercialization, there is
evidence that it will deliver the much-anticipated high density and access
latencies within only a few factors of DRAM. Nevertheless, the
latency-sensitive nature of memory-resident services makes seamless integration
of SCM in servers questionable. In this paper, we ask the question of how best
to introduce SCM for such servers to improve overall performance/cost over
existing DRAM-only architectures. We first show that even with the most
optimistic latency projections for SCM, the higher memory access latency
results in prohibitive performance degradation. However, we find that
deployment of a modestly sized high-bandwidth 3D stacked DRAM cache makes the
performance of an SCM-mostly memory system competitive. The high degree of
spatial locality that memory-resident services exhibit not only simplifies the
DRAM cache's design as page-based, but also enables the amortization of
increased SCM access latencies and the mitigation of SCM's read/write latency
disparity.
We identify the set of memory hierarchy design parameters that plays a key
role in the performance and cost of a memory system combining an SCM technology
and a 3D stacked DRAM cache. We then introduce a methodology to drive
provisioning for each of these design parameters under a target
performance/cost goal. Finally, we use our methodology to derive concrete
results for specific SCM technologies. With PCM as a case study, we show that a
two bits/cell technology hits the performance/cost sweet spot, reducing the
memory subsystem cost by 40% while keeping performance within 3% of the best
performing DRAM-only system, whereas single-level and triple-level cell
organizations are impractical for use as memory replacements.Comment: Published at MEMSYS'1
A Modern Primer on Processing in Memory
Modern computing systems are overwhelmingly designed to move data to
computation. This design choice goes directly against at least three key trends
in computing that cause performance, scalability and energy bottlenecks: (1)
data access is a key bottleneck as many important applications are increasingly
data-intensive, and memory bandwidth and energy do not scale well, (2) energy
consumption is a key limiter in almost all computing platforms, especially
server and mobile systems, (3) data movement, especially off-chip to on-chip,
is very expensive in terms of bandwidth, energy and latency, much more so than
computation. These trends are especially severely-felt in the data-intensive
server and energy-constrained mobile systems of today. At the same time,
conventional memory technology is facing many technology scaling challenges in
terms of reliability, energy, and performance. As a result, memory system
architects are open to organizing memory in different ways and making it more
intelligent, at the expense of higher cost. The emergence of 3D-stacked memory
plus logic, the adoption of error correcting codes inside the latest DRAM
chips, proliferation of different main memory standards and chips, specialized
for different purposes (e.g., graphics, low-power, high bandwidth, low
latency), and the necessity of designing new solutions to serious reliability
and security issues, such as the RowHammer phenomenon, are an evidence of this
trend. This chapter discusses recent research that aims to practically enable
computation close to data, an approach we call processing-in-memory (PIM). PIM
places computation mechanisms in or near where the data is stored (i.e., inside
the memory chips, in the logic layer of 3D-stacked memory, or in the memory
controllers), so that data movement between the computation units and memory is
reduced or eliminated.Comment: arXiv admin note: substantial text overlap with arXiv:1903.0398
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