Design and Analysis of Robust Low Voltage Static Random Access Memories.

Static Random Access Memory (SRAM) is an indispensable part of most modern VLSI designs and dominates silicon area in many applications. In scaled technologies, maintaining high SRAM yield becomes more challenging since they are particularly vulnerable to process variations due to 1) the minimum sized devices used in SRAM bitcells and 2) the large array sizes. At the same time, low power design is a key focus throughout the semiconductor industry. Since low voltage operation is one of the most effective ways to reduce power consumption due to its quadratic relationship to energy savings, lowering the minimum operating voltage (Vmin) of SRAM has gained significant interest. This thesis presents four different approaches to design and analyze robust low voltage SRAM: SRAM analysis method improvement, SRAM bitcell development, SRAM peripheral optimization, and advance device selection. We first describe a novel yield estimation method for bit-interleaved voltage-scaled 8-T SRAMs. Instead of the traditional trade-off between write and read, the trade-off between write and half select disturb is analyzed. In addition, this analysis proposes a method to find an appropriate Write Word-Line (WWL) pulse width to maximize yield. Second, low leakage 10-T SRAM with speed compensation scheme is proposed. During sleep mode of a sensor application, SRAM retaining data cannot be shut down so it is important to minimize leakage in SRAM. This work adopts several leakage reduction techniques while compensating performance. Third, adaptive write architecture for low voltage 8-T SRAMs is proposed. By adaptively modulating WWL width and voltage level, it is possible to achieve low power consumption while maintaining high yield without excessive performance degradation. Finally, low power circuit design based on heterojunction tunneling transistors (HETTs) is discussed. HETTs have a steep subthreshold swing beneficial for low voltage operation. Device modeling and design of logic and SRAM are proposed.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91569/1/daeyeonk_1.pd

Low-voltage embedded biomedical processor design

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.Cataloged from PDF version of thesis.Includes bibliographical references (p. 180-190).Advances in mobile electronics are fueling new possibilities in a variety of applications, one of which is ambulatory medical monitoring with body-worn or implanted sensors. Digital processors on such sensors serve to analyze signals in real-time and extract key features for transmission or storage. To support diverse and evolving applications, the processor should be flexible, and to extend sensor operating lifetime, the processor should be energy-efficient. This thesis focuses on architectures and circuits for low power biomedical signal processing. A general-purpose processor is extended with custom hardware accelerators to reduce the cycle count and energy for common tasks, including FIR and median filtering as well as computing FFTs and mathematical functions. Improvements to classic architectures are proposed to reduce power and improve versatility: an FFT accelerator demonstrates a new control scheme to reduce datapath switching activity, and a modified CORDIC engine features increased input range and decreased quantization error over conventional designs. At the system level, the addition of accelerators increases leakage power and bus loading; strategies to mitigate these costs are analyzed in this thesis. A key strategy for improving energy efficiency is to aggressively scale the power supply voltage according to application performance demands. However, increased sensitivity to variation at low voltages must be mitigated in logic and SRAM design. For logic circuits, a design flow and a hold time verification methodology addressing local variation are proposed and demonstrated in a 65nm microcontroller functioning at 0.3V. For SRAMs, a model for the weak-cell read current is presented for near-V supply voltages, and a self-timed scheme for reducing internal bus glitches is employed with low leakage overhead. The above techniques are demonstrated in a 0.5-1.OV biomedical signal processing platform in 0.13p-Lm CMOS. The use of accelerators for key signal processing enabled greater than 10x energy reduction in two complete EEG and EKG analysis applications, as compared to implementations on a conventional processor.by Joyce Y. S. Kwong.Ph.D

Design and Analysis of an Adjacent Multi-bit Error Correcting Code for Nanoscale SRAMs

Increasing static random access memory (SRAM) bitcell density is a major driving force for semiconductor technology scaling. The industry standard 2x reduction in SRAM bitcell area per technology node has lead to a proliferation in memory intensive applications as greater memory system capacity can be realized per unit area. Coupled with this increasing capacity is an increasing SRAM system-level soft error rate (SER). Soft errors, caused by galactic radiation and radioactive chip packaging material corrupt a bitcell’s data-state and are a potential cause of catastrophic system failures. Further, reductions in device geometries, design rules, and sensitive node capacitances increase the probability of multiple adjacent bitcells being upset per particle strike to over 30% of the total SER below the 45 nm process node. Traditionally, these upsets have been addressed using a simple error correction code (ECC) combined with word interleaving. With continued scaling however, errors beyond this setup begin to emerge. Although more powerful ECCs exist, they come at an increased overhead in terms of area and latency. Additionally, interleaving adds complexity to the system and may not always be feasible for the given architecture. In this thesis, a new class of ECC targeted toward adjacent multi-bit upsets (MBU) is proposed and analyzed. These codes present a tradeoff between the currently popular single error correcting-double error detecting (SEC-DED) ECCs used in SRAMs (that are unable to correct MBUs), and the more robust multi-bit ECC schemes used for MBU reliability. The proposed codes are evaluated and compared against other ECCs using a custom test suite and multi-bit error channel model developed in Matlab as well as Verilog hardware description language (HDL) implementations synthesized using Synopsys Design Compiler and a commercial 65 nm bulk CMOS standard cell library. Simulation results show that for the same check-bit overhead as a conventional 64 data-bit SEC-DED code, the proposed scheme provides a corrected-SER approximately equal to the Bose-Chaudhuri- Hocquenghem (BCH) double error correcting (DEC) code, and a 4.38x improvement over the SEC-DED code in the same error channel. While, for 3 additional check-bits (still 3 less than the BCH DEC code), a triple adjacent error correcting version of the proposed code provides a 2.35x improvement in corrected-SER over the BCH DEC code for 90.9% less ECC circuit area and 17.4% less error correction delay. For further verification, a 0.4-1.0 V 75 kb single-cycle SRAM macro protected with a programmable, up-to-3-adjacent-bit-correcting version of the proposed ECC has been fab- ricated in a commercial 28 nm bulk CMOS process. The SRAM macro has undergone neu- tron irradiation testing at the TRIUMF Neutron Irradiation Facility in Vancouver, Canada. Measurements results show a 189x improvement in SER over an unprotected memory with no ECC enabled and a 5x improvement over a traditional single-error-correction (SEC) code at 0.5 V using 1-way interleaving for the same number of check-bits. This is compa- rable with the 4.38x improvement observed in simulation. Measurement results confirm an average active energy of 0.015 fJ/bit at 0.4 V, and average 80 mV reduction in VDDMIN across eight packaged chips by enabling the ECC. Both the SRAM macro and ECC circuit were designed for dynamic voltage and frequency scaling for both nominal and low voltage applications using a full-custom circuit design flow

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Deep in-memory computing

There is much interest in embedding data analytics into sensor-rich platforms such as wearables, biomedical devices, autonomous vehicles, robots, and Internet-of-Things to provide these with decision-making capabilities. Such platforms often need to implement machine learning (ML) algorithms under stringent energy constraints with battery-powered electronics. Especially, energy consumption in memory subsystems dominates such a system's energy efficiency. In addition, the memory access latency is a major bottleneck for overall system throughput. To address these issues in memory-intensive inference applications, this dissertation proposes deep in-memory accelerator (DIMA), which deeply embeds computation into the memory array, employing two key principles: (1) accessing and processing multiple rows of memory array at a time, and (2) embedding pitch-matched low-swing analog processing at the periphery of bitcell array. The signal-to-noise ratio (SNR) is budgeted by employing low-swing operations in both memory read and processing to exploit the application level's error immunity for aggressive energy efficiency. This dissertation first describes the system rationale underlying the DIMA's processing stages by identifying the common functional flow across a diverse set of inference algorithms. Based on the analysis, this dissertation presents a multi-functional DIMA to support four algorithms: support vector machine (SVM), template matching (TM), k-nearest neighbor (k-NN), and matched filter. The circuit and architectural level design techniques and guidelines are provided to address the challenges in achieving multi-functionality. A prototype integrated circuit (IC) of a multi-functional DIMA was fabricated with a 16 KB SRAM array in a 65 nm CMOS process. Measurement results show up to 5.6X and 5.8X energy and delay reductions leading to 31X energy delay product (EDP) reduction with negligible (<1%) accuracy degradation as compared to the conventional 8-b fixed-point digital implementation optimally designed for each algorithm. Then, DIMA also has been applied to more complex algorithms: (1) convolutional neural network (CNN), (2) sparse distributed memory (SDM), and (3) random forest (RF). System-level simulations of CNN using circuit behavioral models in a 45 nm SOI CMOS demonstrate that high probability (>0.99) of handwritten digit recognition can be achieved using the MNIST database, along with a 24.5X reduced EDP, a 5.0X reduced energy, and a 4.9X higher throughput as compared to the conventional system. The DIMA-based SDM architecture also achieves up to 25X and 12X delay and energy reductions, respectively, over conventional SDM with negligible accuracy degradation (within 0.4%) for 16X16 binary-pixel image classification. A DIMA-based RF was realized as a prototype IC with a 16 KB SRAM array in a 65 nm process. To the best of our knowledge, this is the first IC realization of an RF algorithm. The measurement results show that the prototype achieves a 6.8X lower EDP compared to a conventional design at the same accuracy (94%) for an eight-class traffic sign recognition problem. The multi-functional DIMA and extension to other algorithms naturally motivated us to consider a programmable DIMA instruction set architecture (ISA), namely MATI. This dissertation explores a synergistic combination of the instruction set, architecture and circuit design to achieve the programmability without losing DIMA's energy and throughput benefits. Employing silicon-validated energy, delay and behavioral models of deep in-memory components, we demonstrate that MATI is able to realize nine ML benchmarks while incurring negligible overhead in energy (< 0.1%), and area (4.5%), and in throughput, over a fixed four-function DIMA. In this process, MATI is able to simultaneously achieve enhancements in both energy (2.5X to 5.5X) and throughput (1.4X to 3.4X) for an overall EDP improvement of up to 12.6X over fixed-function digital architectures