Oxidation-resistant reflective surfaces for solar dynamic power generation in near Earth orbit

Reflective surfaces for space station power generation systems are required to withstand the atomic oxygen-dominated environment of near Earth orbit. Thin films of platinum and rhodium, which are corrosion resistant reflective metals, have been deposited by ion beam sputter deposition onto various substrate materials. Solar reflectances were then measured as a function of time of exposure to a RF-generated air plasma. Similarly, various protective coating materials, including MgF2, SiO2, Al2O3, and Si3N4, were deposited onto silver-coated substrates and then exposed to the plasma. Analysis of the films both before and after exposure by both ESCA and Auger spectroscopy was also performed. The results indicate that Pt and Rh do not suffer any loss in reflectance over the duration of the tests. Also, each of the coating materials survived the plasma environment. The ESCA and Auger analyses are discussed as well

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparison purpose. The films' structure and morphology were analyzed by X-ray diffractiopn and scanning electron microscopy, respectively; nad showed that the surface roughness for the Al2O3-BST films increased with the Al2O3 content. Apart from that, the broadening in the intensity peak in XRD result indicating the grain size of the Al2O3-BST films reduced with the increasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BST films with a home-made non-destructive dual resonator method at frequency ~ 7.7 GHZ. The effect of doped Al2O3 into BST thin films significantly reduced the dielectric constant, dielectric loss and tunability compare to pure BST thin film. Our result shows the figure of merit (K), used to compare the films with varied dielectric properties, increased with the Al2O3 content. Therefore Al2O3-BST films show the potential to be exploited in tunable microwave devices.Comment: 8 pages, 4 figures, 1 table. Accepted & tentatively for Feb 15 2004 issue, Journal of Applied Physic

Preparation of pure boehmite, alpha-Al2O3 and their mixtures by hydrothermal oxidation of aluminium metal

A hydrothermal oxidation process for preparing pure boehmite, alpha-Al2O3, and their mixtures by oxidation of pure aluminum metal is described, and the reaction mechanisms involved are identified. SEM images are presented which show distinct morphologies of boehmite, alpha-Al2O3, and boehmite + alpha-Al2O3 phases. Near sperical shapes of alpha-Al2O3 powder phases are obtained at 550 C with 30 percent volume of fill

New insights into the dust formation of oxygen-rich AGB stars

We observed the AGB stars S Ori, GX Mon and R Cnc with the MIDI instrument at the VLTI. We compared the data to radiative transfer models of the dust shells, where the central stellar intensity profiles were described by dust-free dynamic model atmospheres. We used Al2O3 and warm silicate grains. Our S Ori and R Cnc data could be well described by an Al2O3 dust shell alone, and our GX Mon data by a mix of an Al2O3 and a silicate shell. The best-fit parameters for S Ori and R Cnc included photospheric angular diameters Theta(Phot) of 9.7+/-1.0mas and 12.3+/-1.0mas, optical depths tau(V)(Al2O3) of 1.5+/-0.5 and 1.35+/-0.2, and inner radii R(in) of 1.9+/-0.3R(Phot) and 2.2+/-0.3R(Phot), respectively. Best-fit parameters for GX Mon were Theta(Phot)=8.7+/-1.3mas, tau(V)(Al2O3)=1.9+/-0.6, R(in)(Al2O3)=2.1+/-0.3R(Phot), tau(V)(silicate)=3.2+/-0.5, and R(in)(silicate)=4.6+/-0.2R(Phot). Our model fits constrain the chemical composition and the inner boundary radii of the dust shells, as well as the photospheric angular diameters. Our interferometric results are consistent with Al2O3 grains condensing close to the stellar surface at about 2 stellar radii, co-located with the extended atmosphere and SiO maser emission, and warm silicate grains at larger distances of about 4--5 stellar radii. We verified that the number densities of aluminum can match that of the best-fit Al2O3 dust shell near the inner dust radius in sufficiently extended atmospheres, confirming that Al2O3 grains can be seed particles for the further dust condensation. Together with literature data of the mass-loss rates, our sample is consistent with a hypothesis that stars with low mass-loss rates form primarily dust that preserves the spectral properties of Al2O3, and stars with higher mass-loss rate form dust with properties of warm silicates.Comment: 20 pages, 10 figure

High-Q distributed-Bragg-grating laser cavities

Applying Bragg gratings in Al2O3 channel waveguides, we demonstrate distributed Bragg reflectors with Q-factors of 1.02x10e6. An integrated Al2O3:Yb3+ waveguide laser with 67% slope efficiency and 47 mW output power is achieved with such cavities

Phase Transformations of Metallorganic Chemical Vapor Deposition Processed Alumina Coatings Investigated by In Situ Deflection

Phase transformations of Al2O3 films, deposited by metallorganic chemical vapor deposition from aluminium tri-isopropoxide on AISI 301 stainless steel, were investigated using an original technique of deflection associated with X-ray diffraction and electron microscopy. The samples were first oxidized at 1123 K in air to obtain a 0.9 m thick Cr2O3 protective oxide film on one side of the samples. Then, 1 m thick amorphous Al2O3 films were deposited on the opposite side at 823 K and 2 kPa. The deflection of such dissymmetrical samples was recorded during anisothermal treatments, consisting in slow heating to 1173 K in Ar atmosphere. The coefficient of thermal expansion of both the Cr2O3 and the amorphous Al2O3 films was determined to be 710−6 K−1 and 14.7 10−6 K−1, respectively. Crystallization kinetics of amorphous to mainly –Al2O3 become significant at temperatures equal or greater than 983 K. Transformation of metastable Al2O3 to –Al2O3 is initiated below 1173 K. It is demonstrated that deflection is a powerful tool for investigating the behavior of thin films deposited on a substrate and especially to reveal transformations occurring in these films during heat-treatments

Surface modification of an Al2O3/SiO2 based ceramic treated with CO2, Nd:YAG, excimer and high power diode lasers for altered wettability characteristics

Interaction of CO2, Nd:YAG, excimer and high power diode laser (HPDL) radiation with the surface of an Al2O3/SiO2 based ceramic was found to affect significant changes in the wettability characteristics of the material. It was observed that interaction with CO2, Nd:YAG and HPDL radiation reduced the enamel contact angle from 1180 to 310, 340 and 330 respectively. In contrast, interaction with excimer laser radiation resulted an increase in the contact angle to 1210. Such changes were identified as being due to: (i) the melting and partial vitrification of the Al2O3/SiO2 based ceramic surface as a result of interaction with CO2, Nd:YAG HPDL radiation. (ii) the surface roughness of the Al2O3/SiO2 based ceramic increasing after interaction with excimer laser radiation. (iii) the relative surface oxygen content of the Al2O3/SiO2 based ceramic increasing after interaction with CO2, Nd:YAG and HPDL radiation. The work has shown that the wettability characteristics of the Al2O3/SiO2 based ceramic could be controlled and/or modified with laser surface treatment. Moreover, it was found that changes in the wettability characteristics of the Al2O3/SiO2 based ceramic are related to the effects of laser wavelength, that is whether the wavelength of the laser radiation has the propensity to cause surface melting

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60x1012 cm-2 at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.Comment: 8 pages, 4 figures, Applied Physics Letter