Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry

We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer give local deviation values of the tunnel junction resistance that fall below 7.5 % with an average of 1.3 %. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N = 41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models we found an upper limit for the local tunnel junction resistance deviation of ~5 % for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by the accuracy of our experimental setup

Parallel fabrication and single-electron charging of devices based on ordered, two-dimensional phases of organically functionalized metal nanocrystals

A parallel technique for fabricating single-electron, solid-state capacitance devices from ordered, two-dimensional closest-packed phases of organically functionalized metal nanocrystals is presented. The nanocrystal phases were prepared as Langmuir monolayers and subsequently transferred onto Al-electrode patterned glass substrates for device construction. Alternating current impedance measurements were carried out to probe the single-electron charging characteristics of the devices under both ambient and 77 K conditions. Evidence of a Coulomb blockade and step structure reminiscent of a Coulomb staircase is presented

Recovery of remanent polarization of poly(vinylidene fluoride-co-trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 mu C/cm(2) was obtained after annealing up to 185 degrees C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (similar to 150 degrees C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field. (C) 2007 American Institute of Physicsopen142

Galvanic coupling between copper and aluminium in a thin-layer cell

The Al/Cu coupling was investigated in a thin-layer cell formed by a large Cu electrode and an Al microelectrode embedded in an insulator placed above the Cu electrode. By using a scanning electrochemical microscope (SECM) the thickness of the thin layer was perfectly controlledwith a precision in the micrometer range. A copper deposit on an electrochemical quartz crystal microbalance (EQCM) was also used as SECM substrate to quantify the copper dissolution rate. It was shown that such an experimental set-up allows to mimic the galvanic corrosion of intermetallic particles embedded in the aluminium matrix of the 2XXX series aluminium alloys. The combination of the SECM and the EQCM permitted the evaluation of the corrosion rate of copper at the corrosion potential of the 2024 Al alloy, whereas cyclic voltammetry performed on the SECM tip indicated the enrichment in Cu2+ ions in the thin electrolyte layer

Investigation of electrorefining of metallic alloy fuel onto solid Al cathodes

This work concerned the electrorefining of UZr and UPuZr alloys on a solid aluminium cathode, in the LiCl-KCl eutectic melt containing U3+, Pu3+, Np3+, Zr2+ or Zr 4+, Am3+, Nd3+, Y3+, Ce3+ and Gd3+ chlorides. During constant current electrolyses, the use of a cathodic cut-off potential (-1.25 V vs. Ag/AgCl) allowed to selectively deposit actinides (mainly U), while lanthanides remainedin the salt. The aim was to determine the maximal load achievable on a single aluminium electrode. The total exchange charge was 4300 C, which represents the deposition of 3.72 g of actinides in 4.17 g Al, yielding a composition of 44.6 wt% An in Al. It was shown that the melting of the cathode contributed to increase the total amount of actinides deposited on the aluminium

Aluminum chlorine battery Quarterly report, 27 Apr. - 26 Aug. 1969

Aluminum chlorine batterie

Electrode polarization at the Au, O2(g)/yttria stabilized zirconia interface. Part II: electrochemical measurements and analysis

The impedance of the Au, O2 (g) / yttria stabilized zirconia interface has been measured as function of the overpotential, temperature and oxygen partial pressure. At large cathodic overpotentials (η < −0.1 V) and large anodic overpotentials (η > +0.1 V) inductive effects are observed in the impedance diagram at low frequencies. Those inductive effects result from a charge transfer mechanism where a stepwise transfer of electrons towards adsorbed oxygen species occurs. A model analysis shows that the inductive effects at cathodic overpotentials appear when the fraction of coverage of one of the intermediates increases with more negative cathodic overpotentials. The steady state current-voltage characteristics can be analyzed with a Butler-Volmer type of equation. The apparent cathodic charge transfer coefficient is close to c=0.5 and the apparent anodic charge transfer coefficient varies between 1.7< a<2.8. The logarithm of the equilibrium exchange current density (Io) shows a positive dependence on the logarithm of the oxygen partial pressure with a slope of m= (0.60 ± 0.02). Both the apparent cathodic charge transfer coefficient and the oxygen partial pressure dependence of Io are in accordance with a reaction model where a competition exists between charge transfer and mass transport of molecular adsorbed oxygen species along the electrode/solid electrolyte interface. The apparent anodic charge transfer coefficients deviate from the model prediction.\u

Using single quantum states as spin filters to study spin polarization in ferromagnets

By measuring electron tunneling between a ferromagnet and individual energy levels in an aluminum quantum dot, we show how spin-resolved quantum states can be used as filters to determine spin-dependent tunneling rates. We also observe magnetic-field-dependent shifts in the magnet's electrochemical potential relative to the dot's energy levels. The shifts vary between samples and are generally smaller than expected from the magnet's spin-polarized density of states. We suggest that they are affected by field-dependent charge redistribution at the magnetic interface.Comment: 4 pages, 1 color figur