Supply Voltage Dependence of Heavy Ion Induced SEEs on 65nm CMOS Bulk SRAMs

The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern integrated circuit design, considering the fact that they occupy large area and consume significant portion of power consumption in modern nanometer chips. SRAM operating in low power supply voltages has become an effective approach in reducing power consumption. Therefore, it is essential to experimentally characterize the single event effects (SEE) of hardened and unhardened SRAM cells to determine their appropriate applications, especially when a low supply voltage is preferred. In this thesis, a SRAM test chip was designed and fabricated with four cell arrays sharing the same peripheral circuits, including two types of unhardened cells (standard 6T and sub-threshold 10T) and two types of hardened cells (Quatro and DICE). The systems for functional and radiation tests were built up with power supply voltages that ranged from near threshold 0.4 V to normal supply 1 V. The test chip was irradiated with alpha particles and heavy ions with various linear energy transfers (LETs) at different core supply voltages, ranging from 1 V to 0.4 V. Experimental results of the alpha test and heavy ion test were consistent with the results of the simulation. The cross sections of 6T and 10T cells present much more significant sensitivities than Quatro and DICE cells for all tested supply voltages and LET. The 10T cell demonstrates a more optimal radiation performance than the 6T cell when LET is small (0.44 MeV·cm2/mg), yet no significant advantage is evident when LET is larger than this. In regards to the Quatro and DICE cells, one does not consistently show superior performance over the other in terms of soft error rates (SERs). Multi-bit upsets (MBUs) occupy a larger portion of total SEUs in DICE cell when relatively larger LET and smaller supply voltage are applied. It explains the loss in radiation tolerance competition with Quatro cell when LET is bigger than 9.1 MeV·cm2/mg and supply voltage is smaller than 0.6 V. In addition, the analysis of test results also demonstrated that the error amount distributions follow a Poisson distribution very well for each type of cell array

Low-power and high-performance SRAM design in high variability advanced CMOS technology

As process technologies shrink, the size and number of memories on a chip are exponentially increasing. Embedded SRAMs are a critical component in modern digital systems, and they strongly impact the overall power, performance, and area. To promote memory-related research in academia, this dissertation introduces OpenRAM, a flexible, portable and open-source memory compiler and characterization methodology for generating and verifying memory designs across different technologies.In addition, SRAM designs, focusing on improving power consumption, access time and bitcell stability are explored in high variability advanced CMOS technologies. To have a stable read/write operation for SRAM in high variability process nodes, a differential-ended single-port 8T bitcell is proposed that improves the read noise margin, write noise margin and readout bitcell current by 45%, 48% and 21%, respectively, compared to a conventional 6T bitcell. Also, a differential-ended single-port 12T bitcell for subthreshold operation is proposed that solves the half-select disturbance and allows efficient bit-interleaving. 12T bitcell has a leakage control mechanism which helps to reduce the power consumption and provides operation down to 0.3 V. Both 8T and 12T bitcells are analyzed in a 64 kb SRAM array using 32 nm technology. Besides, to further improve the access time and power consumption, two tracking circuits (multi replica bitline delay and reconfigurable replica bitline delay techniques) are proposed to aid the generation of accurate and optimum sense amplifier set time.An error tolerant SRAM architecture suitable for low voltage video application with dynamic power-quality management is also proposed in this dissertation. This memory uses three power supplies to improve the SRAM stability in low voltages. The proposed triple-supply approach achieves 63% improvement in image quality and 69% reduction in power consumption compared to a single-supply 64 kb SRAM array at 0.70 V

A survey of near-data processing architectures for neural networks

Data-intensive workloads and applications, such as machine learning (ML), are fundamentally limited by traditional computing systems based on the von-Neumann architecture. As data movement operations and energy consumption become key bottlenecks in the design of computing systems, the interest in unconventional approaches such as Near-Data Processing (NDP), machine learning, and especially neural network (NN)-based accelerators has grown significantly. Emerging memory technologies, such as ReRAM and 3D-stacked, are promising for efficiently architecting NDP-based accelerators for NN due to their capabilities to work as both high-density/low-energy storage and in/near-memory computation/search engine. In this paper, we present a survey of techniques for designing NDP architectures for NN. By classifying the techniques based on the memory technology employed, we underscore their similarities and differences. Finally, we discuss open challenges and future perspectives that need to be explored in order to improve and extend the adoption of NDP architectures for future computing platforms. This paper will be valuable for computer architects, chip designers, and researchers in the area of machine learning.This work has been supported by the CoCoUnit ERC Advanced Grant of the EU’s Horizon 2020 program (grant No 833057), the Spanish State Research Agency (MCIN/AEI) under grant PID2020-113172RB-I00, and the ICREA Academia program.Peer ReviewedPostprint (published version

Doctor of Philosophy in Computing

dissertatio

ULTRALOW-POWER, LOW-VOLTAGE DIGITAL CIRCUITS FOR BIOMEDICAL SENSOR NODES

Ph.DDOCTOR OF PHILOSOPH

Ultra-Low Power Circuit Design for Cubic-Millimeter Wireless Sensor Platform.

Modern daily life is surrounded by smaller and smaller computing devices. As Bell’s Law predicts, the research community is now looking at tiny computing platforms and mm3-scale sensor systems are drawing an increasing amount of attention since they can create a whole new computing environment. Designing mm3-scale sensor nodes raises various circuit and system level challenges and we have addressed and proposed novel solutions for many of these challenges to create the first complete 1.0mm3 sensor system including a commercial microprocessor. We demonstrate a 1.0mm3 form factor sensor whose modular die-stacked structure allows maximum volume utilization. Low power I2C communication enables inter-layer serial communication without losing compatibility to standard I2C communication protocol. A dual microprocessor enables concurrent computation for the sensor node control and measurement data processing. A multi-modal power management unit allowed energy harvesting from various harvesting sources. An optical communication scheme is provided for initial programming, synchronization and re-programming after recovery from battery discharge. Standby power reduction techniques are investigated and a super cut-off power gating scheme with an ultra-low power charge pump reduces the standby power of logic circuits by 2-19× and memory by 30%. Different approaches for designing low-power memory for mm3-scale sensor nodes are also presented in this work. A dual threshold voltage gain cell eDRAM design achieves the lowest eDRAM retention power and a 7T SRAM design based on hetero-junction tunneling transistors reduces the standby power of SRAM by 9-19× with only 15% area overhead. We have paid special attention to the timer for the mm3-scale sensor systems and propose a multi-stage gate-leakage-based timer to limit the standard deviation of the error in hourly measurement to 196ms and a temperature compensation scheme reduces temperature dependency to 31ppm/°C. These techniques for designing ultra-low power circuits for a mm3-scale sensor enable implementation of a 1.0mm3 sensor node, which can be used as a skeleton for future micro-sensor systems in variety of applications. These microsystems imply the continuation of the Bell’s Law, which also predicts the massive deployment of mm3-scale computing systems and emergence of even smaller and more powerful computing systems in the near future.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91438/1/sori_1.pd