5,621 research outputs found

    Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

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    We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature

    Per-Core DVFS with Switched-Capacitor Converters for Energy Efficiency in Manycore Processors

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    Integrating multiple power converters on-chip improves energy efficiency of manycore architectures. Switched-capacitor (SC) dc-dc converters are compatible with conventional CMOS processes, but traditional implementations suffer from limited conversion efficiency. We propose a dynamic voltage and frequency scaling scheme with SC converters that achieves high converter efficiency by allowing the output voltage to ripple and having the processor core frequency track the ripple. Minimum core energy is achieved by hopping between different converter modes and tuning body-bias voltages. A multicore processor model based on a 28-nm technology shows conversion efficiencies of 90% along with over 25% improvement in the overall chip energy efficiency

    Log-domain implementation of complex dynamics reaction-diffusion neural networks

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    In this paper, we have identified a second-order reaction-diffusion differential equation able to reproduce through parameter setting different complex spatio-temporal behaviors. We have designed a log-domain hardware that implements the spatially discretized version of the selected reaction-diffusion equation. The logarithmic compression of the state variables allows several decades of variation of these state variables within subthreshold operation of the MOS transistors. Furthermore, as all the equation parameters are implemented as currents, they can be adjusted several decades. As a demonstrator, we have designed a chip containing a linear array of ten second-order dynamics coupled cells. Using this hardware, we have experimentally reproduced two complex spatio-temporal phenomena: the propagation of travelling waves and of trigger waves, as well as isolated oscillatory cells.Gobierno de España TIC1999-0446-C02-02Office of Naval Research (USA

    Compact and accurate models of large single-wall carbon-nanotube interconnects

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    Single-wall carbon nanotubes (SWCNTs) have been proposed for very large scale integration interconnect applications and their modeling is carried out using the multiconductor transmission line (MTL) formulation. Their time-domain analysis has some simulation issues related to the high number of SWCNTs within each bundle, which results in a highly complex model and loss of accuracy in the case of long interconnects. In recent years, several techniques have been proposed to reduce the complexity of the model whose accuracy decreases as the interconnection length increases. This paper presents a rigorous new technique to generate accurate reduced-order models of large SWCNT interconnects. The frequency response of the MTL is computed by using the spectral form of the dyadic Green's function of the 1-D propagation problem and the model complexity is reduced using rational-model identification techniques. The proposed approach is validated by numerical results involving hundreds of SWCNTs, which confirm its capability of reducing the complexity of the model, while preserving accuracy over a wide frequency range

    Compact low-power calibration mini-DACs for neural arrays with programmable weights

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    This paper considers the viability of compact low-resolution low-power mini digital-to-analog converters (mini-DACs) for use in large arrays of neural type cells, where programmable weights are required. Transistors are biased in weak inversion in order to yield small currents and low power consumptions, a necessity when building large size arrays. One important drawback of weak inversion operation is poor matching between transistors. The resulting effective precision of a fabricated array of 50 DACs turned out to be 47% (1.1 bits), due to transistor mismatch. However, it is possible to combine them two by two in order to build calibrated DACs, thus compensating for inter-DAC mismatch. It is shown experimentally that the precision can be improved easily by a factor of 10 (4.8% or 4.4 bits), which makes these DACs viable for low-resolution applications such as massive arrays of neural processing circuits. A design methodology is provided, and illustrated through examples, to obtain calibrated mini-DACs of a given target precision. As an example application, we show simulation results of using this technique to calibrate an array of digitally controlled integrate-and-fire neurons.Gobierno de España TIC1999-0446-C02-02, TIC2000-0406-P4-05, FIT-07000/2002/921, TIC2002-10878-EEuropean Union IST- 2001-3412
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