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    Accumulation

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    This written Thesis is the supporting documentation for Accumulation, a Master of Fine Arts Thesis Exhibition at West Virginia University. This exhibition creates an environment in which a viewer can enter. This installation environment is created based on formal elements combined with fantastical elements from the imagination of the artist. The formal choices in the work provoke a positive otherworldly and whimsical response in the viewer. The environment is designed to provide relief from problems in the everyday world through patterns, forms, colors and surfaces. These elements are harvested from the natural world and recombined in a fantastical way. This installation contains ceramic and mixed media sculptures in the gallery space. The goal of the work is to provide experiential relief for the artist and the viewer from the mundane qualities of everyday life

    Orders of accumulation of entropy

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    For a continuous map TT of a compact metrizable space XX with finite topological entropy, the order of accumulation of entropy of TT is a countable ordinal that arises in the context of entropy structure and symbolic extensions. We show that every countable ordinal is realized as the order of accumulation of some dynamical system. Our proof relies on functional analysis of metrizable Choquet simplices and a realization theorem of Downarowicz and Serafin. Further, if MM is a metrizable Choquet simplex, we bound the ordinals that appear as the order of accumulation of entropy of a dynamical system whose simplex of invariant measures is affinely homeomorphic to MM. These bounds are given in terms of the Cantor-Bendixson rank of \overline{\ex(M)}, the closure of the extreme points of MM, and the relative Cantor-Bendixson rank of \overline{\ex(M)} with respect to \ex(M). We also address the optimality of these bounds.Comment: 48 page

    Injection and detection of spin in a semiconductor by tunneling via interface states

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    Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in itself, but in parallel with direct tunneling. The spin accumulation induced in the semiconductor channel is not suppressed, as previously argued, but genuinely enhanced by the additional spin current via interface states. Spin detection with a ferromagnetic contact yields a weighted average of the spin accumulation in the channel and in the localized states. In the regime where the spin accumulation in the localized states is much larger than that in the channel, the detected spin signal is insensitive to the spin accumulation in the localized states and the ferromagnet probes the spin accumulation in the semiconductor channel.Comment: 7 pages, 2 figures. Theory onl

    Spintronic Spin Accumulation and Thermodynamics

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    The spin degree of freedom can play an essential role in determining the electrical transport properties of spin-polarized electron systems in metals or semiconductors. In this article, I address the dependence of spin-subsystem chemical potentials on accumulated spin-densities. I discuss both approaches which can be used to measure this fundamental thermodynamic quantity and the microscopic physics which determines its value in several different systems.Comment: 14 pages, 4 figures. Based on lecture given at the XVI Sitges Conference, June 1999. Proceedings to be published by Springer-Verla
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