Andreev Bound States in High Temperature Superconductors

Andreev bound states (ABS) at the surface of superconductors are expected for any pair potential showing a sign change in different k-directions with their spectral weight depending on the relative orientation of the surface and the pair potential. We report on the observation of ABS in HTS employing tunneling spectroscopy on bicrystal grain boundary Josephson junctions (GBJs). The tunneling spectra were studied as a function of temperature and applied magnetic field. The tunneling spectra of GBJ formed by YBCO, BSCCO, and LSCO show a pronounced zero bias conductance peak that can be interpreted in terms of Andreev bound states at zero energy that are expected at the surface of HTS having a d-wave symmetry of the order parameter. In contrast, for the most likely s-wave HTS NCCO no zero bias conductance peak was observed. Applying a magnetic field results in a shift of spectral weight from zero to finite energy. This shift is found to depend nonlinearly on the applied magnetic field. Further consequences of the Andreev bound states are discussed and experimental evidence for anomalous Meissner currents is presented.Comment: 17 pages, 10 figures, to appear in Eur. Phys. J.

Tunneling into the normal state of Pr(2-x)CexCuO4

The temperature dependence of the tunneling conductance was measured for various doping levels of Pr(2-x)CexCuO4 using planar junctions. A normal state gap is seen at all doping levels studied, x=0.11 to x=0.19. We find it to vanish above a certain temperature T*. T* is greater than Tc for the underdoped region and it follows Tc on the overdoped side. This behavior suggests finite pairing amplitude above Tc on the underdoped side

Epitaxial growth and magnetic properties of Sr2CrReO6 thin films

The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on (001)-oriented SrTiO3 substrates. Phase-pure films with optimum crystallographic and magnetic properties were obtained by growing at a substrate temperature of 700 degree C in pure O2 of 6.6x10-4 mbar. The films are c-axis oriented, coherently strained, and show less than 20% anti-site defects. The magnetization curves reveal high saturation magnetization of 0.8 muB per formula unit and high coercivity of 1.1 T, as well as a strong magnetic anisotropy.Comment: accepted for publicatio

Novel Multifunctional Materials Based on Oxide Thin Films and Artificial Heteroepitaxial Multilayers

Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the basis for novel multi-functional materials and various device applications. Here, we report on the combination of ferromagnetic, semiconducting, metallic, and dielectric materials properties in thin films and artificial heterostructures using laser molecular beam epitaxy. We discuss the fabrication and characterization of oxide-based ferromagnetic tunnel junctions, transition metal-doped semiconductors, intrinsic multiferroics, and artificial ferroelectric/ferromagetic heterostructures - the latter allow for the detailed study of strain effects, forming the basis of spin-mechanics. For characterization we use X-ray diffraction, SQUID magnetometry, magnetotransport measurements, and advanced methods of transmission electron microscopy with the goal to correlate macroscopic physical properties with the microstructure of the thin films and heterostructures.Comment: 21 pages, 21 figures (2 figures added, typos corrected

Task-Related modulations of BOLD low-frequency fluctuations within the default mode Network

Spontaneous low-frequency Blood-Oxygenation Level-Dependent (BOLD) signals acquired during resting state are characterized by spatial patterns of synchronous fluctuations, ultimately leading to the identification of robust brain networks. The resting-state brain networks, including the Default Mode Network (DMN), are demonstrated to persist during sustained task execution, but the exact features of task-related changes of network properties are still not well characterized. In this work we sought to examine in a group of 20 healthy volunteers (age 33 ± 6 years, 8 F/12 M) the relationship between changes of spectral and spatiotemporal features of one prominent resting-state network, namely the DMN, during the continuous execution of a working memory n-back task. We found that task execution impacted on both functional connectivity and amplitude of BOLD fluctuations within large parts of the DMN, but these changes correlated between each other only in a small area of the posterior cingulate. We conclude that combined analysis of multiple parameters related to connectivity, and their changes during the transition from resting state to continuous task execution, can contribute to a better understanding of how brain networks rearrange themselves in response to a task

Epitaxial growth and transport properties of Sr2_2CrWO6_6 thin films

We report on the preparation and characterization of epitaxial thin films of the double-perovskite Sr$_2$CrWO$_6$ by Pulsed Laser Deposition (PLD). On substrates with low lattice mismatch like SrTiO$_3$, epitaxial Sr$_2$CrWO$_6$ films with high crystalline quality can be grown in a molecular layer-by-layer growth mode. Due to the similar ionic radii of Cr and W, these elements show no sublattice order. Nevertheless, the measured Curie temperature is well above 400 K. Due to the reducing growth atmosphere required for double perovskites, the SrTiO$_3$ substrate surface undergoes an insulator-metal transition impeding the separation of thin film and substrate electric transport properties.Comment: 3 pages, 5 figure

Andreev bound states in high-TcT_c superconducting junctions

The formation of bound states at surfaces of materials with an energy gap in the bulk electron spectrum is a well known physical phenomenon. At superconductor surfaces, quasiparticles with energies inside the superconducting gap $\Delta$ may be trapped in bound states in quantum wells, formed by total reflection against the vacuum and total Andreev reflection against the superconductor. Since an electron reflects as a hole and sends a Cooper pair into the superconductor, the surface states give rise to resonant transport of quasiparticle and Cooper pair currents, and may be observed in tunneling spectra. In superconducting junctions, these surface states may hybridize and form bound Andreev states, trapped between the superconducting electrodes. In d-wave superconductors, the order parameter changes sign under $90^o$ rotation and, as a consequence, Andreev reflection may lead to the formation of zero energy quasiparticle bound states, midgap states (MGS). The formation of MGS is a robust feature of d-wave superconductivity and provides a unified framework for many important effects which will be reviewed: large Josephson current, low-temperature anomaly of the critical Josephson current, $\pi$-junction behavior, $0\to \pi$ junction crossover with temperature, zero-bias conductance peaks, paramagnetic currents, time reversal symmetry breaking, spontaneous interface currents, and resonance features in subgap currents. Taken together these effects, when observed in experiments, provide proof for d-wave superconductivity in the cuprates.Comment: 52 pages, 20 figures. Review article under consideration for publication in Superconductor Science and Technolog

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 {\deg}C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC$_x$ surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO$_2$ thin films prepared and measured under identical conditions, the formation of HfC$_x$ was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating