Enhanced Efficiency of Flexible GaN/Perovskite Solar Cells Based on the Piezo-Phototronic Effect

Solar cells fabricated by piezoelectric semiconductor materials, such as GaN, AlN, and CdS, enable better performance due to piezo-phototronic modulation. Recent experiments have revealed the possibility to further improve the energy conversion efficiency of perovskite solar cells with a gallium nitride (GaN) substrate as the electron transport layer. In this study, a perovskite piezo-phototronic solar cell with a GaN layer has been investigated theoretically. The open-circuit voltage, current–voltage curves, fill factor, efficiency of power conversion, and power of maximum output under applied strains are obtained. While the applied strain is 1%, the open-circuit voltage has been improved by 3.8%. This design can offer a practical approach to produce high-efficiency perovskite solar cells

Solution-processed small-molecule solar cells: breaking the 10% power conversion efficiency.

A two-dimensional conjugated small molecule (SMPV1) was designed and synthesized for high performance solution-processed organic solar cells. This study explores the photovoltaic properties of this molecule as a donor, with a fullerene derivative as an acceptor, using solution processing in single junction and double junction tandem solar cells. The single junction solar cells based on SMPV1 exhibited a certified power conversion efficiency of 8.02% under AM 1.5 G irradiation (100 mW cm(-2)). A homo-tandem solar cell based on SMPV1 was constructed with a novel interlayer (or tunnel junction) consisting of bilayer conjugated polyelectrolyte, demonstrating an unprecedented PCE of 10.1%. These results strongly suggest solution-processed small molecular materials are excellent candidates for organic solar cells

Reduced Coulomb interaction in organic solar cells by the introduction of inorganic high-k nanostructured materials

In this article a concept is introduced, which allows for reduced Coulomb interaction in organic solar cells and as such for enhanced power conversion efficiencies. The concept is based on the introduction of electrically insulating, nanostructured high-k materials into the organic matrix, which do not contribute to the charge transport, however, effectively enhance the permittivity of the organic active layer and thereby reduce the Coulomb interaction. Using an analytical model it is demonstrated that even at a distance of 20 nm to the organic / inorganic interface of the nanostructure, the Coulomb interaction can be reduced by more than 15 %. The concept is implemented using P3HT:PCBM solar cells with integrated high-k nanoparticles (strontium titanate). It could be demonstrated that in comparison to a reference cell without integrated nanoparticles, the power conversion efficiencies could be improved by ~20 %.Comment: 11 pages, 7 figure

Thin-film quantum dot photodiode for monolithic infrared image sensors

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10(-6) A/cm(2) at 2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors