1 research outputs found
A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries
Engineering andPhysical Science ResearchCouncil
(EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt
to improve standard cell libraries aimed at operation in the subthreshold regime and in
Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is
examined, with particular emphasis on how subthreshold physical effects degrade
robustness, variability and performance. How prevalent these physical effects are in a
commercial 65nm library is then investigated by extensive modeling of a BSIM4.5
compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out
and post-layout parasitically extracted models simulated to determine the
advantages/disadvantages of each. Full custom ring oscillators are designed and
manufactured. Measured results reveal a close correlation with the simulated results, with
frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices
respectively. The experiment provides the first silicon evidence of the improvement
capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well
as a mechanism of additional temperature stability in the subthreshold regime.
A novel sizing strategy is proposed and pursued to determine whether it is able to produce
a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit
AES cores are synthesized from the novel sizing strategy and compared against a third
AES core synthesized from a state-of-the-art subthreshold standard cell library used by
ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency
improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior
over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in
energy-per-cycle of 24% and frequency improvement of 8.65X.
A comparison to prior art is then performed. Valid cases are presented where the
proposed sizing strategy would be a candidate to produce superior subthreshold circuits