A Low Power 32 Bit CMOS ROM Using A Novel ATD Circuit

A low power high speed 32 Bit ROM circuit implemented on 0.18µm CMOS process has been presented in this paper. The circuit is build using a parallel ROM core structure and runs on 1.8 V supply voltage. A novel Address Transition Decoder (ATD) circuit is proposed which energizes the ROM components such as Row Decoder, Column Decoder, ROM core etc, for short time intervals when there is a transition in input address bits. The power consumed in ROM with proposed ATD circuit is 0.78 mW, which corresponds to 82.27% reduction in power as compared to ROM without ATD circuit (4.46 mW). At the output almost full signal swing has been achieved without using any sense amplifier. The implemented ROM has a very low latency of 0.56 ns.DOI:http://dx.doi.org/10.11591/ijece.v3i4.316

A fully integrated SRAM-based CMOS arbitrary waveform generator for analog signal processing

This dissertation focuses on design and implementation of a fully-integrated SRAM-based arbitrary waveform generator for analog signal processing applications in a CMOS technology. The dissertation consists of two parts: Firstly, a fully-integrated arbitrary waveform generator for a multi-resolution spectrum sensing of a cognitive radio applications, and an analog matched-filter for a radar application and secondly, low-power techniques for an arbitrary waveform generator. The fully-integrated low-power AWG is implemented and measured in a 0.18-¥ìm CMOS technology. Theoretical analysis is performed, and the perspective implementation issues are mentioned comparing the measurement results. Moreover, the low-power techniques of SRAM are addressed for the analog signal processing: Self-deactivated data-transition bit scheme, diode-connected low-swing signaling scheme with a short-current reduction buffer, and charge-recycling with a push-pull level converter for power reduction of asynchronous design. Especially, the robust latch-type sense amplifier using an adaptive-latch resistance and fully-gated ground 10T-SRAM bitcell in a 45-nm SOI technology would be used as a technique to overcome the challenges in the upcoming deep-submicron technologies.Ph.D.Committee Chair: Kim, Jongman; Committee Member: Kang, Sung Ha; Committee Member: Lee, Chang-Ho; Committee Member: Mukhopadhyay, Saibal; Committee Member: Tentzeris, Emmanouil