Image acquisition method and system

A method of acquiring an image of a scene illuminated by a first beam, by means of a sensor including at least two pixels, including the steps of: a) for each pixel, reading a first output value of the pixel representative of the intensity of the radiation received by the pixel during a first integration period during which the sensor is illuminated by a second beam coherent with the first beam; and b) for each pixel, reading a second output value of the pixel representative of the intensity of the radiation received by the pixel during a second integration period during which the sensor is not illuminated by the second beam, wherein steps a) and b) are repeated a plurality of times by changing, between two successive iterations, the angle of incidence or a phase parameter of the second beam

A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz

Silicon-Based Terahertz Circuits and Systems

The Terahertz frequency range, often referred to as the `Terahertz' gap, lies wedged between microwave at the lower end and infrared at the higher end of the spectrum, occupying frequencies between 0.3-3.0 THz. For a long time, applications in THz frequencies had been limited to astronomy and chemical sciences, but with advancement in THz technology in recent years, it has shown great promise in a wide range of applications ranging from disease diagnostics, non-invasive early skin cancer detection, label-free DNA sequencing to security screening for concealed weapons and contraband detection, global environmental monitoring, nondestructive quality control and ultra-fast wireless communication. Up until recently, the terahertz frequency range has been mostly addressed by high mobility compound III-V processes, expensive nonlinear optics, or cryogenically cooled quantum cascade lasers. A low cost, room temperature alternative can enable the development of such a wide array of applications, not currently accessible due to cost and size limitations. In this thesis, we will discuss our approach towards development of integrated terahertz technology in silicon-based processes. In the spirit of academic research, we will address frequencies close to 0.3 THz as 'Terahertz'. In this thesis, we address both fronts of integrated THz systems in silicon: THz power generation, radiation and transmitter systems, and THz signal detection and receiver systems. THz power generation in silicon-based integrated circuit technology is challenging due to lower carrier mobility, lower cut-o frequencies compared to compound III-V processes, lower breakdown voltages and lossy passives. Radiation from silicon chip is also challenging due to lossy substrates and high dielectric constant of silicon. In this work, we propose novel ways of combining circuit and electromagnetic techniques in a holistic design approach, which can overcome limitations of conventional block-by-block or partitioned design methodology, in order to generate high-frequency signals above the classical definition of cut-off frequencies (ƒt/ƒmax). We demonstrate this design philosophy in an active electromagnetic structure, which we call Distributed Active Radiator. It is inspired by an Inverse Maxwellian approach, where instead of using classical circuit and electromagnetic blocks to generate and radiate THz frequencies, we formulate surface (metal) currents in silicon chip for a desired THz field prole and develop active means of controlling different harmonic currents to perform signal generation, frequency multiplication, radiation and lossless filtering, simultaneously in a compact footprint. By removing the articial boundaries between circuits, electromagnetics and antenna, we open ourselves to a broader design space. This enabled us to demonstrate the rst 1 mW Eective-isotropic-radiated-power(EIRP) THz (0.29 THz) source in CMOS with total radiated power being three orders of magnitude more than previously demonstrated. We also proposed a near-field synchronization mechanism, which is a scalable method of realizing large arrays of synchronized autonomous radiating sources in silicon. We also demonstrate the first THz CMOS array with digitally controlled beam-scanning in 2D space with radiated output EIRP of nearly 10 mW at 0.28 THz. On the receiver side, we use a similar electronics and electromagnetics co-design approach to realize a 4x4 pixel integrated silicon Terahertz camera demonstrating to the best of our knowledge, the most sensitive silicon THz detector array without using post-processing, silicon lens or high-resistivity substrate options (NEP &lt; 10 pW &#8730; Hz at 0.26 THz). We put the 16 pixel silicon THz camera together with the CMOS DAR THz power generation arrays and demonstrated, for the first time, an all silicon THz imaging system with a CMOS source.</p

Ultra Low Noise CMOS Image Sensors

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image sensors based on pinned photo diodes (PPDs). The latter includes the historical background, the PPD physics and the readout chain circuits used for low-noise performance. The physical mechanisms behind the random fluctuations affecting the signal at different levels of conventional CIS readout chains are reviewed and clarified. This thesis dedicates a particular focus to the readout circuit noise given that it precludes photoelectron counting in conventional CIS. A detailed analytical calculation of the temporal read noise (TRN) in conventional CIS readout chain is presented. The latter suggests different noise reduction techniques at process and circuit design level. Among the noise reduction techniques suggested by the analytical noise calculation, the increase of the oxide capacitance by using a thin oxide in-pixel amplifying transistor, for low 1/f noise, is suggested for the first time. A test chip designed in a 180 nm CIS process and embedding optimized readout chains exploiting the new pixels together with state-of-the-art 4T pixels optimized at process level for low 1/f noise. A mean input-referred noise of 0.4 e-rms has been measured. Compared with the state-of-the-art pixels, also present onto the test chip, the mean RMS noise is divided by more than 2. Based on these encouraging result, a full VGA (640H×480V) imager has been integrated in a standard CIS process. The presented imager relies on a 4T pixel of 6.5 µm pitch with a properly sized and biased thin oxide PMOS source follower. A full characterization of the proposed image sensor, at room temperature, is presented. The sensor chip features an input-referred noise histogram from 0.25 e-rms to a few e-rms peaking at 0.48 e-rms. This sub-0.5 electron noise performance is obtained with a full well capacity of 6400 e- and a frame rate that can go up to 80 fps. The VGA imager also features a fixed pattern noise as low as 0.77%, a lag of 0.1% and a dark current of 5.6 e-/s. Correlated multiple sampling (CMS) is a noise reduction technique commonly used in low noise CIS. This work presents an original design for CMS based on a passive switched-capacitor network, with a minimum number of capacitors. The proposed circuit requires no additional active circuitry, has no impact on the output dynamic range and does not need multiple analog-to-digital conversions. It was verified with transient noise simulations and shows a noise reduction in perfect agreement with ideal CMS. For a future perspective, the impact of the technology downscale on CIS sensitivity from an electronic read noise aspect is investigated. Active imaging in the Terahertz (THz) band is an emerging technology. Source modulation combined with a selective filtering can be used to reduce the noise in CMOS THz imagers. This work presents the first integration of a 1 kpixel CMOS THz imager integrating, in each pixel, a metal antenna with a MOS rectifier, low noise amplification and highly selective filtering, based on a switch-capacitor N-path filter combined with a broad band Gm-C filter. The latter has been tested successfully. An input-referred noise of 0.2 µV RMS corresponding to a total noise equivalent THz power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz