63,092 research outputs found

    Energy Saving Techniques for Phase Change Memory (PCM)

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    In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory (PCM), which has low read latency and power; and nearly zero leakage power. However, the write latency and power of PCM are very high and this, along with limited write endurance of PCM present significant challenges in enabling wide-spread adoption of PCM. To address this, several architecture-level techniques have been proposed. In this report, we review several techniques to manage power consumption of PCM. We also classify these techniques based on their characteristics to provide insights into them. The aim of this work is encourage researchers to propose even better techniques for improving energy efficiency of PCM based main memory.Comment: Survey, phase change RAM (PCRAM

    Implications of non-volatile memory as primary storage for database management systems

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    Traditional Database Management System (DBMS) software relies on hard disks for storing relational data. Hard disks are cheap, persistent, and offer huge storage capacities. However, data retrieval latency for hard disks is extremely high. To hide this latency, DRAM is used as an intermediate storage. DRAM is significantly faster than disk, but deployed in smaller capacities due to cost and power constraints, and without the necessary persistency feature that disks have. Non-Volatile Memory (NVM) is an emerging storage class technology which promises the best of both worlds. It can offer large storage capacities, due to better scaling and cost metrics than DRAM, and is non-volatile (persistent) like hard disks. At the same time, its data retrieval time is much lower than that of hard disks and it is also byte-addressable like DRAM. In this paper, we explore the implications of employing NVM as primary storage for DBMS. In other words, we investigate the modifications necessary to be applied on a traditional relational DBMS to take advantage of NVM features. As a case study, we have modified the storage engine (SE) of PostgreSQL enabling efficient use of NVM hardware. We detail the necessary changes and challenges such modifications entail and evaluate them using a comprehensive emulation platform. Results indicate that our modified SE reduces query execution time by up to 40% and 14.4% when compared to disk and NVM storage, with average reductions of 20.5% and 4.5%, respectively.The research leading to these results has received funding from the European Union’s 7th Framework Programme under grant agreement number 318633, the Ministry of Science and Technology of Spain under contract TIN2015-65316-P, and a HiPEAC collaboration grant awarded to Naveed Ul Mustafa.Peer ReviewedPostprint (author's final draft

    A Study on Performance and Power Efficiency of Dense Non-Volatile Caches in Multi-Core Systems

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    In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the asymmetric nature of the MLC storage scheme to build cache lines featuring heterogeneous performances, that is, half of the cache lines are read-friendly, while the other is write-friendly. Furthermore, we propose to opportunistically deactivate ways in underutilized sets to convert MLC to Single-Level Cell (SLC) mode, which features overall better performance and lifetime. Our ultimate goal is to build a cache architecture that combines the capacity advantages of MLC and performance/energy advantages of SLC. Our experiments show an improvement of 43% in total numbers of conflict misses, 27% in memory access latency, 12% in system performance, and 26% in LLC access energy, with a slight degradation in cache lifetime (about 7%) compared to an SLC cache

    Improving Phase Change Memory Performance with Data Content Aware Access

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    A prominent characteristic of write operation in Phase-Change Memory (PCM) is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content can incur significantly higher latency and energy compared to overwriting known all-zeros or all-ones content. This is because all-zeros or all-ones content is overwritten by programming the PCM cells only in one direction, i.e., using either SET or RESET operations, not both. In this paper, we propose data content aware PCM writes (DATACON), a new mechanism that reduces the latency and energy of PCM writes by redirecting these requests to overwrite memory locations containing all-zeros or all-ones. DATACON operates in three steps. First, it estimates how much a PCM write access would benefit from overwriting known content (e.g., all-zeros, or all-ones) by comprehensively considering the number of set bits in the data to be written, and the energy-latency trade-offs for SET and RESET operations in PCM. Second, it translates the write address to a physical address within memory that contains the best type of content to overwrite, and records this translation in a table for future accesses. We exploit data access locality in workloads to minimize the address translation overhead. Third, it re-initializes unused memory locations with known all-zeros or all-ones content in a manner that does not interfere with regular read and write accesses. DATACON overwrites unknown content only when it is absolutely necessary to do so. We evaluate DATACON with workloads from state-of-the-art machine learning applications, SPEC CPU2017, and NAS Parallel Benchmarks. Results demonstrate that DATACON significantly improves system performance and memory system energy consumption compared to the best of performance-oriented state-of-the-art techniques.Comment: 18 pages, 21 figures, accepted at ACM SIGPLAN International Symposium on Memory Management (ISMM
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