105 research outputs found

    A 90nm, Low Power VCO with Reduced KVCO and Sub−band Spacing Variation

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    In this paper we present the design of a low power VCO with reduced variations in VCO gain (KVCO) and subband spacing resolution (fres). The proposed VCO is designed using a 90nm CMOS process to cover a tuning range of 23%. Variations in KVCO and fres are reduced by factors of 6 and 17 respectively over a conventional sub-banded VCO, designed using the same process, to meet the same tuning range. This makes the proposed VCO more suited to stable PLL operation with its reduced KVCO requirements resulting in an improvement in phase noise performance over the conventional VCO by 2 dB. Due to the reduced loading on the VCO tank achieved by the presented design, power consumption is kept extremely low at 850 μW from a 1 V suppl

    Quadrature Phase-Domain ADPLL with Integrated On-line Amplitude Locked Loop Calibration for 5G Multi-band Applications

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    5th generation wireless systems (5G) have expanded frequency band coverage with the low-band 5G and mid-band 5G frequencies spanning 600 MHz to 4 GHz spectrum. This dissertation focuses on a microelectronic implementation of CMOS 65 nm design of an All-Digital Phase Lock Loop (ADPLL), which is a critical component for advanced 5G wireless transceivers. The ADPLL is designed to operate in the frequency bands of 600MHz-930MHz, 2.4GHz-2.8GHz and 3.4GHz-4.2GHz. Unique ADPLL sub-components include: 1) Digital Phase Frequency Detector, 2) Digital Loop Filter, 3) Channel Bank Select Circuit, and 4) Digital Control Oscillator. Integrated with the ADPLL is a 90-degree active RC-CR phase shifter with on-line amplitude locked loop (ALL) calibration to facilitate enhanced image rejection while mitigating the effects of fabrication process variations and component mismatch. A unique high-sensitivity high-speed dynamic voltage comparator is included as a key component of the active phase shifter/ALL calibration subsystem. 65nm CMOS technology circuit designs are included for the ADPLL and active phase shifter with simulation performance assessments. Phase noise results for 1 MHz offset with carrier frequencies of 600MHz, 2.4GHz, and 3.8GHz are -130, -122, and -116 dBc/Hz, respectively. Monte Carlo simulations to account for process variations/component mismatch show that the active phase shifter with ALL calibration maintains accurate quadrature phase outputs when operating within the frequency bands 600MHz-930MHz, 2.4GHz-2.8GHz and 3.4GHz-4.2GHz

    Frequency Synthesis in Wireless and Wireline Systems

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    First, a frequency synthesizer for IEEE 802.15.4 / ZigBee transceiver applications that employs dynamic True Single Phase Clocking (TSPC) circuits in its frequency dividers is presented and through the analysis and measurement results of this synthesizer, the need for low power circuit techniques in frequency dividers is discussed. Next, Differential Cascode Voltage-Switch-Logic (DCVSL) based delay cells are explored for implementing radio-frequency (RF) frequency dividers of low power frequency synthesizers. DCVSL ip- ops offer small input and clock capacitance which makes the power consumption of these circuits and their driving stages, very low. We perform a delay analysis of DCVSL circuits and propose a closed-form delay model that predicts the speed of DCVSL circuits with 8 percent worst case accuracy. The proposed delay model also demonstrates that DCVSL circuits suffer from a large low-to-high propagation delay ( PLH) which limits their speed and results in asymmetrical output waveforms. Our proposed enhanced DCVSL, which we call DCVSL-R, solves this delay bottleneck, reducing PLH and achieving faster operation. We implement two ring-oscillator-based voltage controlled oscillators (VCOs) in 0.13 mu m technology with DCVSL and DCVSL-R delay cells. In measurements, for the same oscillation frequency (2.4GHz) and same phase noise (-113dBc/Hz at 10MHz), DCVSL-R VCO consumes 30 percent less power than the DCVSL VCO. We also use the proposed DCVSL-R circuit to implement the 2.4GHz dual-modulus prescaler of a low power frequency synthesizer in 0.18 mu m technology. In measurements, the synthesizer exhibits -135dBc/Hz phase noise at 10MHz offset and 58 mu m settling time with 8.3mW power consumption, only 1.07mWof which is consumed by the dual modulus prescaler and the buffer that drives it. When compared to other dual modulus prescalers with similar division ratios and operating frequencies in literature, DCVSL-R dual modulus prescaler demonstrates the lowest power consumption. An all digital phase locked loop (ADPLL) that operates for a wide range of frequencies to serve as a multi-protocol compatible PLL for microprocessor and serial link applications, is presented. The proposed ADPLL is truly digital and is implemented in a standard complementary metal-oxide-semiconductor (CMOS) technology without any analog/RF or non-scalable components. It addresses the challenges that come along with continuous wide range of operation such as stability and phase frequency detection for a large frequency error range. A proposed multi-bit bidirectional smart shifter serves as the digitally controlled oscillator (DCO) control and tunes the DCO frequency by turning on/off inverter units in a large row/column matrix that constitute the ring oscillator. The smart shifter block is completely digital, consisting of standard cell logic gates, and is capable of tracking the row/column unit availability of the DCO and shifting multiple bits per single update cycle. This enables fast frequency acquisition times without necessitating dual loop fi lter or gear shifting mechanisms. The proposed ADPLL loop architecture does not employ costly, cumbersome DACs or binary to thermometer converters and minimizes loop filter and DCO control complexity. The wide range ADPLL is implemented in 90nm digital CMOS technology and has a 9-bit TDC, the output of which is processed by a 10-bit digital loop filter and a 5-bit smart shifter. In measurements, the synthesizer achieves 2.5GHz-7.3GHz operation while consuming 10mW/GHz power, with an active area of 0.23 mm2

    A Fully Differential Phase-Locked Loop With Reduced Loop Bandwidth Variation

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    Phase-Locked Loops (PLLs) are essential building blocks to wireless communications as they are responsible for implementing the frequency synthesizer within a wireless transceiver. In order to maintain the rapid pace of development thus far seen in wireless technology, the PLL must develop accordingly to meet the increasingly demanding requirements imposed on it by today's (and tomorrows) wireless devices. Specically this entails meeting stringent noise specications imposed by modern wireless standards, meeting low power consumption budgets to prolong battery lifetimes, operating under reduced supply voltages imposed by modern technology nodes and within the noisy environments of complex system-on-chip (SOC) designs, all in addition to consuming as little silicon area as possible. The ability of the PLL to achieve the above is thus key to its continual progress in enabling wireless technology achieve increasingly powerful products which increasingly benet our daily lives. This thesis furthers the development of PLLs with respect to meeting the challenges imposed upon it by modern wireless technology, in two ways. Firstly, the thesis describes in detail the advantages to be gained through employing a fully dierential PLL. Specically, such PLLs are shown to achieve low noise performance, consume less silicon area than their conventional counterparts whilst consuming similar power, and being better suited to the low supply voltages imposed by continual technology downsizing. Secondly, the thesis proposes a sub-banded VCO architecture which, in addition to satisfying simultaneous requirements for large tuning ranges and low phase noise, achieves signicant reductions in PLL loop bandwidth variation. First and foremost, this improves on the stability of the PLL in addition to improving its dynamic locking behaviour whilst oering further improvements in overall noise performance. Since the proposed sub-banded architecture requires no additional power over a conventional sub-banded architecture, the solution thus remains attractive to the realm of low power design. These two developments combine to form a fully dierential PLL with reduced loop bandwidth variation. As such, the resulting PLL is well suited to meeting the increasingly demanding requirements imposed on it by today's (and tomorrows) wireless devices, and thus applicable to the continual development of wireless technology in benetting our daily lives

    Ultra high data rate CMOS FEs

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    The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

    Study of Single-Event Transient Effects on Analog Circuits

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    Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implemented with CMOS technologies. The problem is getting worse with the technology scaling down. Radiation-hardening-by-design (RHBD) is a popular method to build CMOS devices and systems meeting performance criteria in radiation environment. Single-event transient (SET) effects in digital circuits have been studied extensively in the radiation effect community. In recent years analog RHBD has been received increasing attention since analog circuits start showing the vulnerability to the SETs due to the dramatic process scaling. Analog RHBD is still in the research stage. This study is to further study the effects of SET on analog CMOS circuits and introduces cost-effective RHBD approaches to mitigate these effects. The analog circuits concerned in this study include operational amplifiers (op amps), comparators, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs). Op amp is used to study SET effects on signal amplitude while the comparator, the VCO, and the PLL are used to study SET effects on signal state during transition time. In this work, approaches based on multi-level from transistor, circuit, to system are presented to mitigate the SET effects on the aforementioned circuits. Specifically, RHBD approach based on the circuit level, such as the op amp, adapts the auto-zeroing cancellation technique. The RHBD comparator implemented with dual-well and triple-well is studied and compared at the transistor level. SET effects are mitigated in a LC-tank oscillator by inserting a decoupling resistor. The RHBD PLL is implemented on the system level using triple modular redundancy (TMR) approach. It demonstrates that RHBD at multi-level can be cost-effective to mitigate the SEEs in analog circuits. In addition, SETs detection approaches are provided in this dissertation so that various mitigation approaches can be implemented more effectively. Performances and effectiveness of the proposed RHBD are validated through SPICE simulations on the schematic and pulsed-laser experiments on the fabricated circuits. The proposed and tested RHBD techniques can be applied to other relevant analog circuits in the industry to achieve radiation-tolerance

    Ultra high data rate CMOS front ends

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    The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology

    Frequency Synthesizers and Oscillator Architectures Based on Multi-Order Harmonic Generation

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    Frequency synthesizers are essential components for modern wireless and wireline communication systems as they provide the local oscillator signal required to transmit and receive data at very high rates. They are also vital for computing devices and microcontrollers as they generate the clocks required to run all the digital circuitry responsible for the high speed computations. Data rates and clocking speeds are continuously increasing to accommodate for the ever growing demand on data and computational power. This places stringent requirements on the performance metrics of frequency synthesizers. They are required to run at higher speeds, cover a wide range of frequencies, provide a low jitter/phase noise output and consume minimum power and area. In this work, we present new techniques and architectures for implementing high speed frequency synthesizers which fulfill the aforementioned requirements. We propose a new architecture and design approach for the realization of wideband millimeter-wave frequency synthesizers. This architecture uses two-step multi-order harmonic generation of a low frequency phase-locked signal to generate wideband mm-wave frequencies. A prototype of the proposed system is designed and fabricated in 90nm Complementary Metal Oxide Semiconductor (CMOS) technology. Measurement results demonstrated that a very wide tuning range of 5 to 32 GHz can be achieved, which is costly to implement using conventional techniques. Moreover the power consumption per octave resembles that of state-of-the art reports. Next, we propose the N-Push cyclic coupled ring oscillator (CCRO) architecture to implement two high performance oscillators: (1) a wideband N-Push/M-Push CCRO operating from 3.16-12.8GHz implemented by two harmonic generation operations using the availability of different phases from the CCRO, and (2) a 13-25GHz millimeter-wave N-Push CCRO with a low phase noise performance of -118dBc/Hz at 10MHz. The proposed oscillators achieve low phase noise with higher FOM than state of the art work. Finally, we present some improvement techniques applied to the performance of phase locked loops (PLLs). We present an adaptive low pass filtering technique which can reduce the reference spur of integer-N charge-pump based PLLs by around 20dB while maintaining the settling time of the original PLL. Another PLL is presented, which features very low power consumption targeting the Medical Implantable Communication Standard. It operates at 402-405 MHz while consuming 600microW from a 1V supply
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