A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

Vidutinių dažnių 5G belaidžių tinklų galios stiprintuvų tyrimas

This dissertation addresses the problems of ensuring efficient radio fre-quency transmission for 5G wireless networks. Taking into account, that the next generation 5G wireless network structure will be heterogeneous, the device density and their mobility will increase and massive MIMO connectivity capability will be widespread, the main investigated problem is formulated – increasing the efficiency of portable mid-band 5G wireless network CMOS power amplifier with impedance matching networks. The dissertation consists of four parts including the introduction, 3 chapters, conclusions, references and 3 annexes. The investigated problem, importance and purpose of the thesis, the ob-ject of the research methodology, as well as the scientific novelty are de-fined in the introduction. Practical significance of the obtained results, defended state-ments and the structure of the dissertation are also included. The first chapter presents an extensive literature analysis. Latest ad-vances in the structure of the modern wireless network and the importance of the power amplifier in the radio frequency transmission chain are de-scribed in detail. The latter is followed by different power amplifier archi-tectures, parameters and their improvement techniques. Reported imped-ance matching network design methods are also discussed. Chapter 1 is concluded distinguishing the possible research vectors and defining the problems raised in this dissertation. The second chapter is focused around improving the accuracy of de-signing lumped impedance matching network. The proposed methodology of estimating lumped inductor and capacitor parasitic parameters is dis-cussed in detail provi-ding complete mathematical expressions, including a summary and conclusions. The third chapter presents simulation results for the designed radio fre-quency power amplifiers. Two variations of Doherty power amplifier archi-tectures are presented in the second part, covering the full step-by-step de-sign and simulation process. The latter chapter is concluded by comparing simulation and measurement results for all designed radio frequency power amplifiers. General conclusions are followed by an extensive list of references and a list of 5 publications by the author on the topic of the dissertation. 5 papers, focusing on the subject of the discussed dissertation, have been published: three papers are included in the Clarivate Analytics Web of Sci-ence database with a citation index, one paper is included in Clarivate Ana-lytics Web of Science database Conference Proceedings, and one paper has been published in unreferred international conference preceedings. The au-thor has also made 9 presentations at 9 scientific conferences at a national and international level.Dissertatio

Wideband Watt-Level Spatial Power-Combined Power Amplifier in SiGe BiCMOS Technology for Efficient mm-Wave Array Transmitters

The continued demand for high-speed wireless communications is driving the development of integrated high-power transmitters at millimeter wave (mm-Wave) frequencies. Si-based technologies allow achieving a high level of integration but usually provide insufficient generated RF power to compensate for the increased propagation and material losses at mm-Wave bands due to the relatively low breakdown voltage of their devices. This problem can be reduced significantly if one could combine the power of multiple active devices on each antenna element. However, conventional on-chip power combining networks have inherently high insertion losses reducing transmitter efficiency and limiting its maximum achievable output power.This work presents a non-conventional design approach for mm-Wave Si-based Watt-level power amplifiers that is based on novel power-combining architecture, where an array of parallel custom PA-cells suited on the same chip is interfaced to a single substrate integrated waveguide (to be a part of an antenna element). This allows one to directly excite TEm0 waveguide modes with high power through spatial power combining functionality, obviating the need for intermediate and potentially lossy on-chip power combiners. The proposed solution offers wide impedance bandwidth (50%) and low insertion losses (0.4 dB), which are virtually independent from the number of interfaced PA-cells. The work evaluates the scalability bounds of the architecture as well as discusses the critical effects of coupled non-identical PA-cells, which are efficiently reduced by employing on-chip isolation load resistors.The proposed architecture has been demonstrated through an example of the combined PA with four differential cascode PA-cells suited on the same chip, which is flip-chip interconnected to the combiner placed on a laminate. This design is implemented in a 0.25 um SiGe BiCMOS technology. The PA-cell has a wideband performance (38.6%) with both high peak efficiency (30%) and high saturated output power (24.9 dBm), which is the highest reported output power level obtained without the use of circuit-level power combining in Si-based technologies at Ka-band. In order to achieve the optimal system-level performance of the combined PA, an EM-circuit-thermal optimization flow has been proposed, which accounts for various multiphysics effects occurring in the joint structure. The final PA achieves the peak PAE of 26.7% in combination with 30.8 dBm maximum saturated output power, which is the highest achievable output power in practical applications, where the 50-Ohms load is placed on a laminate. The high efficiency (>20%) and output power (>29.8 dBm) over a wide frequency range (30%) exceed the state-of-the-art in Si-based PAs

Broadband Linearity-Enhanced Doherty Power Amplifier Design Techniques for 5G Sub-6 GHz Applications

The recently deployed fifth generation (5G) cellular networks represent a significant technological advancement over fourth generation (4G) networks. Specifically, new 5G frequency bands were allocated at sub-6 GHz and instantaneous signal bandwidths were increased to satisfy the rapidly growing needs for increased data rates. Furthermore, 5G uses more complex modulation schemes to improve spectrum efficiency. Finally, 5G introduced massive multiple input multiple output (MIMO), where multiple transceivers are used to direct the signal towards specific users, increasing channel capacity. Conventional power amplifiers (PAs) are not suitable for 5G applications due to the increased signal and system complexity. For example, the Doherty power amplifier (DPA) technique is popular since DPAs can efficiently amplify signals with complex modulation schemes, but conventional DPAs have narrow bandwidth and poor linearity that preclude their use in 5G systems. This motivated research into DPA bandwidth and linearity improvements for use in 5G networks. This work focuses on bandwidth and linearity enhancement for sub-6 GHz DPAs realized using discrete components on a printed circuit board (PCB). Bandwidth is improved using broadband architectures for the DPA output combiner network (OCN), the absorption of drain parasitics, and broadband input matching network (IMN) design. Linearity is enhanced by proper drain biasing network design, and careful selection of transistor source impedances. A 3.3–5.0 GHz DPA using these techniques is designed and fabricated. Under wideband modulated signal excitation, the DPA offers very good linearity with appropriate digital predistortion (DPD). A 2×2 array of DPAs is evaluated in fully digital MIMO setup using a 2×2 antenna array. The DPA array achieves excellent linearity characteristics under 100 MHz signals and use of dual-input single-output (DISO) DPD. The DPA remains the ideal choice in 5G MIMO systems when compared to the class AB PA since it can maintain a higher average drain efficiency and similar linearity

CMOS Front-End Circuits in 45-nm SOI Suitable for Modular Phased-Array 60-GHz Radios

Next Fifth-generation (5G) wireless technologies enabling ultra-wideband spectrum availability and increased system capacity can achieve multi-gigabit/s (Gbps) data rates suitable for ultra-high-speed internet access around the 60-GHz band (i.e., Wi-Gig Technology). This mm-wave band is unlicensed and experiences high propagation power losses. Therefore, it is suitable for short-range communications and requires antenna arrays to satisfy the link budget requirements. Half-duplex reconfigurable phased-array transceivers require wideband, low-cost, highly integrated front-end circuits such as bilateral RF switches, low-noise/power amplifiers, passive RF splitters/combiners, and phase shifters implemented in deep sub-micron CMOS. In this dissertation, analysis, design, and verification of essential CMOS front-end components are covered and fabricated in GlobalFoundries 45-nm RF-SOI CMOS technology. Firstly, a fully-differential, single-pole, single-throw (SPST) switch capable of high isolation in broadband CMOS transceivers is described. The SPST switch realizes better than 50-dB isolation (ISO) across DC to 43 GHz while maintaining an insertion loss (IL) below 3 dB. Measured RF input power for 1-dB compression (IP1dB) of the IL is +19.6 dBm, and the measured input third-order intercept point (IIP3) is +30.4 dBm (both assuming differential inputs at 20 GHz). The prototype has an active area of 0.0058 mm^2. Secondly, a single-pole double-throw (SPDT) switch is implemented using the SPST concept by using a balun to convert the shared differential path to a single-ended antenna port. The SPDT simulations predict less than 3.5-dB IL and greater than 40-dB ISO across 55 to 65 GHz frequency band. An IP1dB of +21 dBm is expected from large-signal simulations. The prototype has an active area of 0.117 mm^2. Thirdly, a fully-differential switched-LC topology adopted with slow-wave artificial transmission line concept, and phase inversion network is described for a 360-degree phase shift range with 11.25-degree phase resolution. The average IL of the complete phase shifter is 5.3 dB with less than 1-dB rms IL error. Furthermore, the IP1dB of the phase shifter is +16 dBm. The prototype has an active area of 0.245 mm^2. Lastly, a fully-differential, 2-stage, common-source (CS) low-noise amplifier (LNA) is developed with wideband matching from 57.8 GHz to 67 GHz, a maximum simulated forward power gain of 20.8 dB, and a minimum noise figure of 3.07 dB. The LNA consumes 21 mW and predicts an OP1dB of 4.8 dBm from the 1-V supply. The LNA consumes an active area of 0.028 mm^2

Millimeter-Wave Components and Antennas for Spatial and Polarization Diversity using PRGW Technology

The evolution of the wireless communication systems to the future generation is accompanied by a huge improvement in the system performance through providing a high data rate with low latency. These systems require access to millimeter wave (mmWave) bands, which offer several advantages such as physically smaller components and much wider bandwidthcomparedtomicrowavefrequencies. However, mmWavecomponentsstillneed a significant improvement to follow the rapid variations in future technologies. Although mmWave frequencies can carry more data, they are limited in terms of their penetration capabilities and their coverage range. Moreover, these frequencies avoid deploying traditional guiding technologies such as microstrip lines due to high radiation and material losses. Hence, utilizing new guiding structure techniques such as Printed Ridge Gap Waveguide (PRGW) is essential in future mmWave systems implementation. ThemainpurposeofthisthesisistodesignmmWavecomponents,antennasubsystems and utilize both in beam switching systems. The major mmWave components addressed in this thesis are hybrid coupler, crossover, and differential power divider where the host guidingstructureisthePRGW.Inaddition,variousdesignsfordifferentialfeedingPRGW antennas and antenna arrays are presented featuring wide bandwidth and high gain in mmWave band. Moreover, the integration of both the proposed components and the featured antennas is introduced. This can be considered as a significant step toward the requirements fulfillment of today's advanced communication systems enabling both space and polarization diversity. The proposed components are designed to meet the future ever-increasing consumer experience and technical requirements such as low loss, compact size, and low-cost fabrication. This directed the presented research to have a contribution into three major parts. The first part highlights the feeding structures, where mmWave PRGW directional couplers and differential feeding power divider are designed and validated. These components are among the most important passive elements of microwave circuits used in antennabeam-switchingnetworks. Different3-dBquadraturehybridcouplersandcrossover prototypes are proposed, featured with a compact size and a wide bandwidth beyond 10 % at 30 GHz. In the second part, a beam switching network implemented using hybrid couplers is presented. The proposed beam switching network is a 4 × 4 PRGW Butler matrix that used to feed a Magneto-electric (ME) dipole antenna array. As a result, a 2-D scanning antenna array with a compact size, wide bandwidth, and high radiation efficiency larger than84%isachieved. Furthergainenhancementof5dBiisachievedthroughdeployinga hybridgainenhancementtechniqueincludingAMCmushroomshapesaroundtheantenna array with a dielectric superstrate located in the broadside direction. The proposed scanning antenna array can be considered as a step toward the desired improvement in the data rate and coverage through enabling the space diversity for the communication link. The final activity is related to the development of high-gain wide-band mmWave antenna arrays for potential use in future mmWave applications. The first proposed configuration is a differential feeding circular polarized aperture antenna array implemented with PRGW technology. Differential feeding antenna designs offer more advantages than single- ended antennas for mmWave communications as they are easy to be integrated with differential mmWave monolithic ICs that have high common-mode rejection ratio providing an immunity of the environmental noise. The proposed differential feeding antenna array is designed and fabricated, which featured with a stable high gain and a high radiation efficiency over a wide bandwidth. Another proposed configuration is a dualpolarized ME-dipole PRGW antenna array for mmWave wireless communication. Dual polarizationisconsideredoneofthemostimportantantennasolutionsthatcansavecosts and space for modern communication systems. In addition, it is an effective strategy for multiple-input and multiple-output systems that can reduce the size of multiple antennas systems by utilizing extra orthogonal polarization. The proposed dual- polarized antenna array is designed to achieve a stable gain of 15 ± 1 dBi with low cross- polarization less than -30 dB over a wide frequency range of 20 % at 30 GHz