Design of a Magnetically Tunable Low Noise Amplifier in 0.13 um CMOS Technology

With legacy technologies present and approaching new wireless standards, the 1-10 GHz band of frequencies is quickly becoming saturated. Although saturated, the frequency bands are being utilized inefficiently. Cognitive radio, an intelligent wireless communication system, is the novel solution for the efficient utilization of the frequency bands. Front-end receivers for cognitive radio will need the capability to receive and process multiple frequency bands and a key component is the low noise amplifier (LNA). A tunable LNA using a new magnetically tuned input impedance matching network is presented. The LNA has been designed and simulated in a commercially available 0.13 μm CMOS technology and is capable of tuning from 3.2 GHz to 4.6 GHz as S11 \u3c -10 dB. Within this bandwidth the maximum power gain is 16.2 dB, the maximum noise figure is 7.5 dB, and the minimum IIP3 is -6.4 dBm. The total power consumption of the LNA (neglecting the buffer required to drive the 50 Ω test equipment) is 50 mW. This tunable LNA introduces a new magnetically tunable matching technique and tuning scheme capable of continuous frequency variation for LNAs. It is expected that this technique could be expanded to realize LNAs with a tunable, narrow-band response that can cover the entire 1-10 GHz band of frequencies. The presented tunable LNA has demonstrated the capability to cover and process multiple frequencies and can be used for reconfigurable systems. A tunable LNA design is the first step in an effort to realize a fully reconfigurable front-end radio frequency (RF) receiver for future cognitive radio applications

A fully integrated SRAM-based CMOS arbitrary waveform generator for analog signal processing

This dissertation focuses on design and implementation of a fully-integrated SRAM-based arbitrary waveform generator for analog signal processing applications in a CMOS technology. The dissertation consists of two parts: Firstly, a fully-integrated arbitrary waveform generator for a multi-resolution spectrum sensing of a cognitive radio applications, and an analog matched-filter for a radar application and secondly, low-power techniques for an arbitrary waveform generator. The fully-integrated low-power AWG is implemented and measured in a 0.18-¥ìm CMOS technology. Theoretical analysis is performed, and the perspective implementation issues are mentioned comparing the measurement results. Moreover, the low-power techniques of SRAM are addressed for the analog signal processing: Self-deactivated data-transition bit scheme, diode-connected low-swing signaling scheme with a short-current reduction buffer, and charge-recycling with a push-pull level converter for power reduction of asynchronous design. Especially, the robust latch-type sense amplifier using an adaptive-latch resistance and fully-gated ground 10T-SRAM bitcell in a 45-nm SOI technology would be used as a technique to overcome the challenges in the upcoming deep-submicron technologies.Ph.D.Committee Chair: Kim, Jongman; Committee Member: Kang, Sung Ha; Committee Member: Lee, Chang-Ho; Committee Member: Mukhopadhyay, Saibal; Committee Member: Tentzeris, Emmanouil