A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

High efficiency power amplifiers for modern mobile communications: The load-modulation approach

Modern mobile communication signals require power amplifiers able to maintain very high efficiency in a wide range of output power levels, which is a major issue for classical power amplifier architectures. Following the load-modulation approach, efficiency enhancement is achieved by dynamically changing the amplifier load impedance as a function of the input power. In this paper, a review of the widely-adopted Doherty power amplifier and of the other load-modulation efficiency enhancement techniques is presented. The main theoretical aspects behind each method are introduced, and the most relevant practical implementations available in recent literature are reported and discussed

Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper

This paper discusses some of the design choices underlying the development of watt-level integrated Doherty power amplifiers in the K and Ka band, focusing on compound semiconductor technologies. The key aspect of on-chip power combination is discussed, presenting and comparing some of the possible alternatives. Then, the impact on the achievable bandwidth and performance of different parameters is quantified, adopting an approximate analysis, which focuses on the Doherty output combiner and allows estimating the non-linear performance of the amplifier thanks to some simplifying assumptions, without requiring a full, non-linear model of the active devices. Two sample GaAs and GaN technologies are compared first, considering parameters that are representative of the currently available commercial processes, and then several power combination strategies are analyzed, adopting the GaN technology, which is currently the only one that allows achieving the power levels required by the applications directly on chip. Finally, some hints as to the impact of the output parasitic effects of the transistors on the presented analysis are given

Millimeter-Wave Active Array Antennas Integrating Power Amplifier MMICs through Contactless Interconnects

Next-generation mobile wireless technologies demand higher data capacity than the modern sub-6 GHz technologies can provide. With abundantly available bandwidth, millimeter waves (e.g., Ka/K bands) can offer data rates of around 10 Gbit/s; however, this shift to higher frequency bands also leads to at least 20 dB more free-space path loss. Active integrated antennas have drawn much attention to compensate for this increased power loss with high-power, energy- efficient, highly integrated array transmitters. Traditionally, amplifiers and antennas are designed separately and interconnected with 50 Ohm intermediate impedance matching networks. The design process typically de-emphasizes the correlation between antenna mutual coupling effects and amplifier nonlinearity, rendering high power consumption and poor linearity. This research aims to overcome the technical challenges of millimeter-wave active integrated array antennas on delivering high power (15–25 dBm) and high energy efficiency (≥25%) with above 10% bandwidth. A co-design methodology was proposed to maximize the output power, power efficiency, bandwidth, and linearity with defined optimal interface impedances. Contrary to conventional approaches, this methodology accounts for the correlation between mutual coupling effects and nonlinearity. A metallic cavity-backed bowtie slot antenna, with sufficient degrees of freedom in synthesizing a non 50 Ohm complex-valued optimal impedance, was adopted for high radiation efficiency and enhanced bandwidth. To overcome interconnection’s bandwidth and power loss limitations, an on-chip E-plane probe contactless transition be- tween the antenna and amplifier was proposed. An array of such antennas be- comes connected bowtie slots, allowing for wideband and wide-scan array performance. An infinite array active integrated unit cell approach was introduced for large-scale (aperture area ≈100 λ2) active array designs. The proposed co-design flow is applied in designing a Ka-band wideband, wide scan angle (\ub155\ub0/\ub140\ub0) active array antenna, consisting of the connected bowtie slot radiator fed through the on-chip probe integrated onto the output of a class AB GaAs pHEMT MMIC PA. The infinite array performance of such elements is experimentally verified, presenting a 11.3% bandwidth with a peak 40% power efficiency, 28 dBm EIRP, and 22 dBm saturated power

A survey on RF and microwave doherty power amplifier for mobile handset applications

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.Agencia Estatal de Investigación | Ref. TEC2017-88242-C3-2-RFundação para a Ciência e a Tecnologia | Ref. UIDP/50008/201

Advanced High Efficiency Architectures for Next Generation Wireless Communications

L'abstract è presente nell'allegato / the abstract is in the attachmen

Efficient and Wideband Load Modulated Power Amplifiers for Wireless Communication

The increasing demand for mobile data traffic has resulted in new challenges and requirements for the development of the wireless communication infrastructure. With the transition to higher frequencies and multi-antenna systems, radio frequency (RF) hardware performance, especially the power amplifier (PA), becomes increasingly important. Enhancing PA energy efficiency and bandwidth is vital for maximizing channel capacity, reducing operational costs, and facilitating integration.In the first part of the thesis, the bandwidth limitations of the standard two-way Doherty PA are discussed. A comprehensive analysis is provided, and the frequency responses of different Doherty combiner networks are presented. Furthermore, a Doherty combiner network is proposed, notable for its inherent broadband frequency and its capacity to account for the influence of output parasitics and packaged components from the active devices. The introduced Doherty combiner network is experimentally verified by a wideband gallium nitride (GaN) Doherty PA operating over 1.6-2.7 GHz.In the second part of the thesis, an analytically based combiner synthesis approach for the three-stage Doherty PA is proposed and presented. A compact output combiner network, together with the input phase delays, is derived directly from transistor load-pull data and the PA design requirements. The technique opens up new design space for three-stage Doherty PAs with reconfigurable high-efficiency power back-off levels. The utility of the proposed technique is demonstrated by the implementation of a 30-W GaN three-stage Doherty PA prototype at 2.14 GHz. Measurements show that a drain efficiency of 68% and 55% is exhibited at 6- and 10-dB back-off power, respectively.In the third part, a new PA architecture named the circulator load modulated amplifier (CLMA), is proposed. This architecture utilizes active load modulation for achieving enhanced back-off efficiency. Two active devices are incorporated in this innovative architecture, and a non-reciprocal circulator-based combiner is leveraged. Following this, the sequential CLMA (SCLMA) is introduced, characterized by its ability to enhance back-off efficiency without the necessity of load modulation. GaN demonstrator circuits for both CLMA and SCLMA architectures, whether with dual-input or RF single-input, are designed and fabricated, with excellent performance being measured.\ua0The thesis contributes novel design techniques and architectures to enhance PA efficiency and bandwidth. These findings pave the way for energy-efficient and adaptable RF transmitters in future wireless communication systems

Integrated Filters and Couplers for Next Generation Wireless Tranceivers

The main focus of this thesis is to investigate the critical nonlinear distortion issues affecting RF/Microwave components such as power amplifiers (PA) and develop new and improved solutions that will improve efficiency and linearity of next generation RF/Microwave mobile wireless communication systems. This research involves evaluating the nonlinear distortions in PA for different analog and digital signals which have been a major concern. The second harmonic injection technique is explored and used to effectively suppress nonlinear distortions. This method consists of simultaneously feeding back the second harmonics at the output of the power amplifier (PA) into the input of the PA. Simulated and measured results show improved linearity results. However, for increasing frequency bandwidth, the suppression abilities reduced which is a limitation for 4G LTE and 5G networks that require larger bandwidth (above 5 MHz). This thesis explores creative ways to deal with this major drawback. The injection technique was modified with the aid of a well-designed band-stop filter. The compact narrowband notch filter designed was able to suppress nonlinear distortions very effectively when used before the PA. The notch filter is also integrated in the injection technique for LTE carrier aggregation (CA) with multiple carriers and significant improvement in nonlinear distortion performance was observed. This thesis also considers maximizing efficiency alongside with improved linearity performance. To improve on the efficiency performance of the PA, the balanced PA configuration was investigated. However, another major challenge was that the couplers used in this configuration are very large in size at the desired operating frequency. In this thesis, this problem was solved by designing a compact branch line coupler. The novel coupler was simulated, fabricated and measured with performance comparable to its conventional equivalent and the coupler achieved substantial size reduction over others. The coupler is implemented in the balanced PA configuration giving improved input and output matching abilities. The proposed balanced PA is also implemented in 4G LTE and 5G wireless transmitters. This thesis provides simulation and measured results for all balanced PA cases with substantial efficiency and linearity improvements observed even for higher bandwidths (above 5 MHz). Additionally, the coupler is successfully integrated with rectifiers for improved energy harvesting performance and gave improved RF-dc conversion efficienc