A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems

This dissertation reports the development of a new multi-band multi-output synthesizer, 1/2 dual-injection locked divider, 1/3 injection-locked divider with phase-tuning, and 1/3 injection-locked divider with self-injection using 0.18-micrometer CMOS technology. The synthesizer is used for a multi-band multi-polarization radar system operating in the K- and Ka-band. The synthesizer is a fully integrated concurrent tri-band, tri-output phase-locked loop (PLL) with divide-by-3 injection locked frequency divider (ILFD). A new locking mechanism for the ILFD based on the gain control of the feedback amplifier is utilized to enable tunable and enhanced locking range which facilitates the attainment of stable locking states. The PLL has three concurrent multiband outputs: 3.47-4.313 GHz, 6.94-8.626 GHz and 19.44-21.42-GHz. High second-order harmonic suppression of 62.2 dBc is achieved without using a filter through optimization of the balance between the differential outputs. The proposed technique enables the use of an integer-N architecture for multi-band and microwave systems, while maintaining the benefit of the integer-N architecture; an optimal performance in area and power consumption. The 1/2 dual-ILFD with wide locking range and low-power consumption is analyzed and designed together with a divide-by-2 current mode logic (CML) divider. The 1/2 dual-ILFD enhances the locking range with low-power consumption through optimized load quality factor (QL) and output current amplitude (iOSC) simultaneously. The 1/2 dual-ILFD achieves a locking range of 692 MHz between 7.512 and 8.204 GHz. The new 1/2 dual-ILFD is especially attractive for microwave phase-locked loops and frequency synthesizers requiring low power and wide locking range. The 3.5-GHz divide-by-3 (1/3) ILFD consists of an internal 10.5-GHz Voltage Controlled Oscillator (VCO) functioning as an injection source, 1/3 ILFD core, and output inverter buffer. A phase tuner implemented on an asymmetric inductor is proposed to increase the locking range. The other divide-by-3 ILFD utilizes self-injection technique. The self-injection technique substantially enhances the locking range and phase noise, and reduces the minimum power of the injection signal needed for the 1/3 ILFD. The locking range is increased by 47.8 % and the phase noise is reduced by 14.77 dBc/Hz at 1-MHz offset

Ultra-Wideband Transceiver with Error Correction for Cortical Interfaces in NanometerCMOS Process

This dissertation reports a high-speed wideband wireless transmission solution for the tight power constraints of cortical interface application. The proposed system deploysImpulse Radio Ultra-wideband (IR-UWB) technique to achieve very high-rate communication. However, impulse radio signals suffer from significant attenuation within the body,and power limitations force the use of very low-power receiver circuits which introduce additional noise and jitter. Moreover, the coils’ self-resonance has to be suppressed to minimize the pulse distortion and inter-symbol interference, adding significant attenuation. To compensate these losses, an Error correction code (ECC) layer is added for functioning reliably to the system. The performance evaluation is made by modeling a pair of physically fabricated coils, and the results show that the ECC is essential to obtain the system’s reliability. Furthermore, the gm/ID methodology, which is based on the complete exploration ofall inversion regions that the transistors are biased, is studied and explored for optimizingthe system at the circuit-level. Specific focuses are on the RF blocks: the low noise am-plifier (LNA) and the injection-locked voltage controlled oscillator (IL-VCO). Through the analytical deduction of the circuit’s features as the function of the gm/ID for each transistor, it is possible to select the optimum operating region for the circuit to achieve the target specification. Other circuit blocks, including the phase shifter, frequency divider,mixer, etc. are also described and analyzed. The prototype is fabricated in a 65-nm CMOS(Complementary Metal-Oxide-Semiconductor) process