A High-Temperature, High-Voltage SOI Gate Driver Integrated Circuit with High Drive Current for Silicon Carbide Power Switches

High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) and gallium arsenide (GaAs) based conventional devices. For successful realization of such high-temperature power electronic circuits, associated control electronics also need to perform at high temperature. In any power converter, gate driver circuit performs as the interface between a low-power microcontroller and the semiconductor power switches. This dissertation presents design, implementation, and measurement results of a silicon-on-insulator (SOI) based high-temperature (\u3e200 _C) and high-voltage (\u3e30 V) universal gate driver integrated circuit with high drive current (\u3e3 A) for SiC power switches. This mixed signal IC has primarily been designed for automotive applications where the under-hood temperature can reach 200 _C. Prototype driver circuits have been designed and implemented in a Bipolar-CMOS- DMOS (BCD) on SOI process and have been successfully tested up to 200 _C ambient temperature driving SiC switches (MOSFET and JFET) without any heat sink and thermal management. This circuit can generate 30V peak-to-peak gate drive signal and can source and sink 3A peak drive current. Temperature compensating and temperature independent design techniques are employed to design the critical functional units like dead-time controller and level shifters in the driver circuit. Chip-level layout techniques are employed to enhance the reliability of the circuit at high temperature. High-temperature test boards have been developed to test the prototype ICs. An ultra low power on-chip temperature sensor circuit has also been designed and integrated into the gate-driver die to safeguard the driver circuit against excessive die temperature (_ 220 _C). This new temperature monitoring approach utilizes a reverse biased p-n junction diode as the temperature sensing element. Power consumption of this sensor circuit is less than 10 uW at 200 _C

A design for testability study on a high performance automatic gain control circuit.

A comprehensive testability study on a commercial automatic gain control circuit is presented which aims to identify design for testability (DfT) modifications to both reduce production test cost and improve test quality. A fault simulation strategy based on layout extracted faults has been used to support the study. The paper proposes a number of DfT modifications at the layout, schematic and system levels together with testability. Guidelines that may well have generic applicability. Proposals for using the modifications to achieve partial self test are made and estimates of achieved fault coverage and quality levels presente

Driving electronics for OLED lighting

This paper proposes the concept of integrating an OLED (foil) and its driving electronics into one module. A complete light system consisting of these modules is the ultimate goal of this work. The main focus in this article is on the design of the driver chip and the circuit implementation. The measurement results confirm that it is possible to control the light output of the different modules

Realization of a single-chip, SiGe:C-based power amplifier for multi-band WiMAX applications

A fully-integrated Multi-Band PA using 0.25 μm SiGe:C process with an output power of above 25 dBm is presented. The behaviour of the amplifier has been optimized for multi-band operation covering, 2.4 GHz, 3.6 GHz and 5.4 GHz (UWB-WiMAX) frequency bands for higher 1-dB compression point and efficiency. Multi-band operation is achieved using multi-stage topology. Parasitic components of active devices are also used as matching components, in turn decreasing the number of matching component. Measurement results of the PA provided the following performance parameters: 1-dB compression point of 20.5 dBm, gain value of 23 dB and efficiency value of %7 operation for the 2.4 GHz band; 1-dB compression point of 25.5 dBm, gain value of 31.5 dB and efficiency value of %17.5 for the 3.6 GHz band; 1-dB compression point of 22.4 dBm, gain value of 24.4 dB and efficiency value of %9.5 for the 5.4 GHz band. Measurement results show that using multi-stage topologies and implementing each parasitic as part of the matching network component has provided a wider-band operation with higher output power levels, above 25 dBm, with SiGe:C process

Serial Biasing Technique for Rapid Single Flux Quantum Circuits

Superconductor electronics based on the Single Flux Quantum (SFQ) technology are considered a strong contender for the ‘beyond CMOS’ future of digital circuits because of the high speed and low power dissipation associated with them. In fact, digital operations beyond tens of GHz have been routinely demonstrated in the SFQ technology. These circuits have widespread applications such as high-speed analog-to-digital conversion, digital signal processing, high speed computing and in emerging topics such as control circuitry for superconducting quantum computing. Rapid Single Flux Quantum (RSFQ) circuits have emerged as a promising candidate within the SFQ technology, with information encoded in picosecond wide, milli-volt voltage pulses. As is the case with any integrated circuit technology, scalability of RSFQ circuits is essential to realizing their applications. These circuits, based on the Josephson junction, require a DC bias current for the correct operation. The DC bias current requirement increases with circuit complexity, and this has multiple implications on circuit operation. Large currents produce magnetic fields that can interfere with logic operation. Furthermore, the heat load delivered to the superconducting chip also increases with current which could result in the circuit becoming ‘normal’ and not superconducting. These problems make reduction of the bias current necessary. Serial Biasing (SB) is a bias current reduction technique, that has been proposed in the past. In this technique, a digital circuit is partitioned into multiple identical islands and bias current is provided to each island in a serial manner. While this scheme is promising, there are multiple challenges such as design of the driver-receiver pair circuit resulting in robust and wide operating bias margins, current management on the floating islands, etc. This thesis investigates SB in a systematic manner, focusing on the design and measurement of the fundamental components of this technique with an emphasis on reliability and scalability. It presents works on circuit techniques achieving high speed serially biased RSFQ circuits with robust operating margins and the experimental evidence to support the ideas. It develops a framework for serial biasing that could be used by electronic design tools to automate design and synthesis of complex RSFQ circuits. It also investigates Passive Transmission Lines (PTLs) for use as passive interconnects between library cells in a complex design, reducing the DC bias current required by the active circuitry

A three channel telemetry system

A three channel telemetry system intended for biomedical applications is described. The transmitter is implemented in a single chip using a 2 micron BiCMOS processes. The operation of the system and the test results from the latest chip are discussed. One channel is always dedicated to temperature measurement while the other two channels are generic. The generic channels carry information from transducers that are interfaced to the system through on-chip general purpose operational amplifiers. The generic channels have different bandwidths: one from dc to 250 Hz and the other from dc to 1300 Hz. Each generic channel modulates a current controlled oscillator to produce a frequency modulated signal. The two frequency modulated signals are summed and used to amplitude modulate the temperature signal which acts as a carrier. A near-field inductive link telemeters the combined signals over a short distance. The chip operates on a supply voltage anywhere from 2.5 to 3.6 Volts and draws less than 1 mA when transmitting a signal. The chip can be incorporated into ingestible, implantable and other configurations. The device can free the patient from tethered data collection systems and reduces the possibility of infection from subcutaneous leads. Data telemetry can increase patient comfort leading to a greater acceptance of monitoring