Thin-Film Transistor Integration for Biomedical Imaging and AMOLED Displays

Thin film transistor (TFT) backplanes are being continuously researched for new applications such as active-matrix organic light emitting diode (AMOLED) displays, sensors, and x-ray imagers. However, the circuits implemented in presently available fabrication technologies including poly silicon (poly-Si), hydrogenated amorphous silicon (a-Si:H), and organic semiconductor, are prone to spatial and/or temporal non-uniformities. While current-programmed active matrix (AM) can tolerate mismatches and non-uniformity caused by aging, the long settling time is a significant limitation. Consequently, acceleration schemes are needed and are proposed to reduce the settling time to 20 µs. This technique is used in the development of a pixel circuit and system for biomedical imager and sensor. Here, a metal-insulator-semiconductor (MIS) capacitor is adopted for adjustment and boost of the circuit gain. Thus, the new pixel architecture supports multi-modality imaging for a wide range of applications with various input signal intensities. Also, for applications with lower current levels, a fast current-mode line driver is developed based on positive feedback which controls the effect of the parasitic capacitance. The measured settling time of a conventional current source is around 2 ms for a 100-nA input current and 200-pF parasitic capacitance whereas it is less than 4 μs for the driver presented here. For displays needed in mobile devices such as cell phones and DVD players, another new driving scheme is devised that provides for a high temporal stability, low-power consumption, high tolerance of temperature variations, and high resolution. The performance of the new driving scheme is demonstrated in a 9-inch fabricated display intended for DVD players. Also, a multi-modal imager pixel circuit is developed using this technique to provide for gain-adjustment capability. Here, the readout operation is not destructive, enabling the use of low-cost readout circuitry and noise reduction techniques. In addition, a highly stable and reliable driving scheme, based on step calibration is introduced for high precision displays and imagers. This scheme takes advantage of the slow aging of the electronics in the backplane to simplify the drive electronics. The other attractive features of this newly developed driving scheme are its simplicity, low-power consumption, and fast programming critical for implementation of large-area and high-resolution active matrix arrays for high precision

AMOLED Displays with In-Pixel Photodetector

The focus of this chapter is to consider additional functionalities beyond the regular display function of an active matrix organic light-emitting diode (AMOLED) display. We will discuss how to improve the resolution of the array with OLED lithography pushing to AR/VR standards. Also, the chapter will give an insight into pixel design and layout with a strong focus on high resolution, enabling open areas in pixels for additional functionalities. An example of such additional functionalities would be to include a photodetector in pixel, requiring the need to include in-panel TFT readout at the peripherals of the full-display sensor array for applications such as finger and palmprint sensing

Pixel Circuits and Driving Schemes for Active-Matrix Organic Light-Emitting Diode Displays

Rapid progress over the last decade on thin film transistor (TFT) active matrix organic light emitting (AMOLED) displays led to the emergence of high-performance, low-power, low-cost flat panel displays. Despite the shortcomings of the active matrix that are associated with the instability and low mobility of TFTs, the amorphous silicon TFT technology still remains the primary solution for the AMOLED backplane. To take advantage of this technology, it is crucial to develop driving schemes and circuit techniques to compensate for the limitations of the TFTs. The driving schemes proposed in this thesis address these challenges, in which, the sensitivity of the OLED current to the transistor variations is reduced significantly. This is achieved by comparing the data signal with a feedback signal associated with the pixel current by means of an external driving circuit through a column feedback line. Depending on the nature of the feedback signal, (i.e. current or voltage) several pixel circuits and external drivers are proposed. New AMOLED pixel circuits with voltage and current feedback are designed, simulated, fabricated, and tested. The performance of these circuits is analyzed in terms of their stability, settling time, power efficiency, noise, and temperature-dependence. For the pixel circuits with current feedback, an operational transresistance amplifier is designed and implemented in a high-voltage CMOS process. Measurement results for both voltage and current feedback driving schemes indicate less than a 2%/V sensitivity to shifts in the threshold voltage of the TFTs. By using current feedback and an accelerating pulse, programming times less than 50 s are achieved

A Second-Order ΣΔ ADC using sputtered IGZO TFTs with multilayer dielectric

This dissertation combines materials science and electronics engineering to implement, for the first time, a 2nd-order ∑∆ ADC using oxide TFTs. The transistors employ a sputtered IGZO semiconductor and an optimizeddielectric layer, based on mixtures of sputtered Ta2O5and SiO2. These dielectrics are studied in multilayer configurations, being the best results achieved for 7 layers: IG7.5 MV/cm, while keeping κ>10, yielding a major improvement over Ta2O5single-layer. After annealing at 200 °C, TFTs with these dielectrics exhibit μSAT≈13 cm2/Vs, On/Off≈107and S≈0.2 V/dec. An a-Si:H TFT RPI model is adapted to simulate these devices with good fitting to experimental data. Concerning circuits, the ∑∆ architecture is naturally selected to deal with device mismatch. After design optimization, ADC simulations achieve SNDR≈57 dB, DR≈65 dB and power dissipation, approximately, of 22 mW (VDD=10 V), which are above the current state-of-the-art for competing thinfilm technologies, such as organics or even LTPS. Mask layouts are currently under verification to enable successful circuit fabrication in the next months.This work is a major step towards the design of complex multifunctional electronic systems with oxide TFT technology, being integrated in ongoing EU-funded and FCT-funded research projects at CENIMAT and UNINOVA

Wide Bandwidth - High Accuracy Control Loops in the presence of Slow Varying Signals and Applications in Active Matrix Organic Light Emitting Displays and Sensor Arrays

This dissertation deals with the problems of modern active matrix organic light-emitting diode AMOLED display back-plane drivers and sensor arrays. The research described here, aims to classify recently utilized compensation techniques into distinct groups and further pinpoint their advantages and shortcomings. Additionally, a way of describing the loops as mathematical constructs is utilized to derive new circuits from the analog design perspective. A novel principle on display driving is derived by observing those mathematical control loop models and it is analyzed and evaluated as a novel way of pixel driving. Specifically, a new feedback current programming architecture and method is described and validated through experiments, which is compatible with AMOLED displays having the two transistor one capacitor (2T1C) pixel structure. The new pixel programming approach is compatible with all TFT technologies and can compensate for non-uniformities in both threshold voltage and carrier mobility of the pixel OLED drive TFT. Data gathered show that a pixel drive current of 20 nA can be programmed in less than 10usec. This new approach can be implemented within an AMOLED external or integrated display data driver. The method to achieve robustness in the operation of the loop is also presented here, observed through a series of measurements. All the peripheral blocks implementing the design are presented and analyzed through simulations and verified experimentally. Sources of noise are identified and eliminated, while new techniques for better isolation from digital noise are described and tested on a newly fabricated driver. Multiple versions of the new proposed circuit are outlined, simulated, fabricated and measured to evaluate their performance.A novel active matrix array approach suitable for a compact multi-channel gas sensor platform is also described. The proposed active matrix sensor array utilizes an array of P-i-N diodes each connected in series with an Inter-Digitated Electrode (IDE). The functionality of 8x8 and 16x16 sensor arrays measured through external current feedback loops is also presented for the 8x8 arrays and the detection of ammonia (NH3) and chlorine (Cl2) vapor sources is demonstrated

Integrated Circuits/Microchips

With the world marching inexorably towards the fourth industrial revolution (IR 4.0), one is now embracing lives with artificial intelligence (AI), the Internet of Things (IoTs), virtual reality (VR) and 5G technology. Wherever we are, whatever we are doing, there are electronic devices that we rely indispensably on. While some of these technologies, such as those fueled with smart, autonomous systems, are seemingly precocious; others have existed for quite a while. These devices range from simple home appliances, entertainment media to complex aeronautical instruments. Clearly, the daily lives of mankind today are interwoven seamlessly with electronics. Surprising as it may seem, the cornerstone that empowers these electronic devices is nothing more than a mere diminutive semiconductor cube block. More colloquially referred to as the Very-Large-Scale-Integration (VLSI) chip or an integrated circuit (IC) chip or simply a microchip, this semiconductor cube block, approximately the size of a grain of rice, is composed of millions to billions of transistors. The transistors are interconnected in such a way that allows electrical circuitries for certain applications to be realized. Some of these chips serve specific permanent applications and are known as Application Specific Integrated Circuits (ASICS); while, others are computing processors which could be programmed for diverse applications. The computer processor, together with its supporting hardware and user interfaces, is known as an embedded system.In this book, a variety of topics related to microchips are extensively illustrated. The topics encompass the physics of the microchip device, as well as its design methods and applications

Current Programmed Active Pixel Sensors for Large Area Diagnostic X-ray Imaging

Rapid progress over the last decade on large area thin film transistor (TFT) arrays led to the emergence of high-performance, low-power, low-cost active matrix flat panel imagers. Despite the shortcomings associated with the instability and low mobility of TFTs, the amorphous silicon TFT technology still remains the primary solution for the backplane of flat panel imagers. The use of a-Si:H TFTs as the building block of the large area integrated circuit becomes challenging particularly when the role of the TFT is extended from traditional switching applications to on-pixel signal amplifier for large area digital imaging. This is the idea behind active pixel sensor (APS) architectures in which under each pixel an amplifier circuit consisting of one or two switching TFTs integrated with one amplifying TFT is fabricated. To take advantage of the full potential of these amplifiers, it is crucial to develop APS architectures to compensate for the limitations of the TFTs. In this thesis several APS architectures are designed, simulated, fabricated, and tested addressing these challenges using the mask sets presented in Appendix A. The proposed APS architectures can compensate for inherent stabilities of the comprising TFTs. Therefore, the sensitivity of their output data to the transistor variations is significantly suppressed. This is achieved by using a well defined external current source instead of the traditional voltage source to reset the APS architectures during the reset cycle of their periodic operation. The performance of these circuits is analyzed in terms of their stability, settling time, noise, and temperature-dependence. For appropriate readout of the current mode APS architectures, high gain transresistance amplifiers with correlated double sampling capability is designed, simulated and fabricated in CMOS technology. Measurement and measurement based calculation results reveal that the proposed APS architectures can meet even the stringent requirements of low noise, real-time digital fluoroscopy

Organic thin-film transistors:from technologies to circuits

Organic molecules (i.e. carbon-based) have opened a new and rapidly-growing industrial field in the optoelectronic market bringing to this field a new dimension of thinness and flexibility. In this context, this thesis has focused on one particular building block of the vast and emerging field of organic electronics: the organic thin-film transistor (OTFT) which uses organic compounds as semiconductor. Whereas the OTFT-based circuits are not meant to compete with the silicon-based high-end industry (micro-processors...), their performance have already reached levels enabling their use in potential applications such as displays (e-paper, LCD, OLED) or radiofrequency identification (RFID) tags. The continuously growing number of available organic molecules exhibiting conductive, semi-conductive or insulating properties combined with the number of available deposition/patterning methods (e.g. gravure printing) gives more flexibility to the technology. These additional degrees of freedom raise two main questions: How to identify the most suitable OTFT platform for a given application and how to estimate its potential, as for instance in, of digital circuits? This thesis targets to answer to those questions. For this purpose, several OTFT platforms have been screened and their performance have been discussed and compared through standard figures of merit. The self-aligned nano-imprinted technology has demonstrated state-of-the-art sub-micrometer OTFTs on 4-inch flexible substrates. This made this platform the most suitable candidate for developing the potential evaluation framework. For that purpose, a static model suitable for the sub-micrometer OTFTs has been developed which embeds almost all known electrical aspects of OTFTs. Then the device-to-device discrepancy often observed in OTFTs has been studied and statistical modeling methods introduced. This allowed the simulation of sub-micrometer inverters performed with commercially available tools. Next, a statistical method has been developed to evaluate the potential of the sub-micrometer OTFTs for digital applications. Whereas the method concludes that these sub-micrometer OTFTs are not mature enough to make complex digital circuits, this methodology is technology-independent and may thus serve as a basis to characterize unipolar-logic printed electronics and be further extended to complementary-logic circuits. Last but not least, an automation effort has been undergone all along this thesis in order to increase the throughput for such demanding data analysis. The main outcome of this task is a user-friendly multi-analysis and parameter extraction platform