Energy-efficient and Power-dense DC-DC Converters in Data Center and Electric Vehicle Applications Using Wide Bandgap Devices

The ever increasing demands in the energy conversion market propel power converters towards high efficiency and high power density. With fast development of data processing capability in the data center, the server will include more processors, memories, chipsets and hard drives than ever, which requires more efficient and compact power converters. Meanwhile, the energy-efficient and power-dense converters for the electric vehicle also result in longer driving range as well as more passengers and cargo capacities. DC-DC converters are indispensable power stages for both applications. In order to address the efficiency and density requirements of the DC-DC converters in these applications, several related research topics are discussed in this dissertation. For the DC-DC converter in the data center application, a LLC resonant converter based on the newly emerged GaN devices is developed to improve the efficiency over the traditional Si-based converter. The relationship between the critical device parameters and converter loss is established. A new perspective of extra winding loss due to the asymmetrical primary and secondary side current in LLC resonant converter is proposed. The extra winding loss is related to the critical device parameters as well. The GaN device benefits on device loss and transformer winding loss is analyzed. An improved LLC resonant converter design method considering the device loss and transformer winding loss is proposed. For the DC-DC converter in the electric vehicle application, an integrated DC-DC converter that combines the on-board charger DC-DC converter and drivetrain DC-DC converter is developed. The integrated DC-DC converter is considered to operate in different modes. The existing dual active bridge (DAB) DC-DC converter originally designed for the charger is proposed to operate in the drivetrain mode to improve the efficiency at the light load and high voltage step-up ratio conditions of the traditional drivetrain DC-DC converter. Design method and loss model are proposed for the integrated converter in the drivetrain mode. A scaled-down integrated DC-DC converter prototype is developed to verify the design and loss model

High Density Power Conversion Electronics Enabled by GaN-Based Modular Topologies

This dissertation explores the use of modular multilevel converter (MMC) architectures, coupled with wide-bandgap semiconductors, to achieve high power-density in power electronics converters. At the converter level, the capabilities of the modular multilevel converter are investigated for their use in low voltage, low power, DC-DC and DC-AC applications. This investigation shows that the use of modular multilevel architectures enables low voltage Gallium Nitride high electron mobility transistors (GaN HEMTs) to be used in applications for which their voltage thresholds are not typically suited. This results in lightweight, compact, conversion systems. GaN HEMTs have been shown to provide a low loss, low volume alternative to Silicon transistors for power conversion, but require several enabling technologies to make them ideally suited to high-density converters. This work therefore presents two enabling technologies for GaN-based conversion circuits. First, a technique is developed that optimizes the gate resistance for driving GaN HEMTs in order to ensure safe, rapid device turn on. Next, the development of planar magnetic transformers is discussed, with a focus on high-frequency converter operation. For each of these technologies mathematical analysis, circuit simulation, and hardware development are performed and compared to ensure proper functionality. Taking advantage of those two enabling technologies, two converter architectures based on the MMC structure are developed. First, a DC-AC MMC is presented, taking advantage of GaN HEMTs and minimal filtering requirements to achieve high power density in low voltage systems. Next, that topology is extended and a novel DC-DC converter based on two coupled DC-AC MMCs is presented. Both systems are described mathematically, simulated, and developed as hardware prototypes to prove functionality. While both converter systems are relevant for applications in DC microgrids, the DC-AC converter will be specifically investigated for its application as a variable speed drive in naval power systems. Likewise, the DC-DC MMC will be shown to provide new solutions for high voltage spacecraft power systems. Based on the work presented in this dissertation, engineers will be presented with alternatives to traditional methods of achieving high density in power conversion systems. By coupling the low filtering requirements and low losses of the modular multilevel converter with low voltage, highly efficient GaN HEMTs, the presented converter systems achieve high power density and efficiency with minimal filtering requirements. The result of this work is two novel converter systems that will enable further research into lightweight, low volume, power conversion

Characterization Methodology, Modeling, and Converter Design for 600 V Enhancement-Mode GaN FETs

Gallium Nitride (GaN) power devices are an emerging technology that have only become available commercially in the past few years. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This dissertation reviews the unique characteristics, commercial status, and design challenges that surround GaN FETs, in order to provide sufficient background to potential GaN-based converter designers.Methodology for experimentally characterizing a GaN FET was also presented, including static characterization with a curve tracer and impedance analyzer, as well as dynamic characterization in a double pulse test setup. This methodology was supplemented by additional tests to determine losses caused by Miller-induced cross talk, and the tradeoff between these losses and overlap losses was studied for one example device.Based on analysis of characterization results, a simplified model was developed to describe the overall switching behavior and some unique features of the device. The impact of the Miller effect during the turn-on transient was studied, as well as the dynamic performance of GaN at elevated temperature.Furthermore, solutions were proposed for several key design challenges in GaN-based converters. First, a driver-integrated overcurrent and short-circuit protection scheme was developed, based on the relationship between gate voltage and drain current in GaN gate injection transistors. Second, the limitations on maximum utilization of current and voltage in a GaN FET were studied, particularly the voltage overshoots following turn-on and turn-off switching transients, and the effective cooling of GaN FETs in higher power operation. A thermal design was developed for heat extraction from bottom-cooled surface-mount devices. These solutions were verified in a GaN-based full-bridge single-phase inverter

Review and Characterization of Gallium Nitride Power Devices

Gallium Nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This thesis reviews the characteristics and commercial status of both vertical and lateral GaN power devices from the user perspective, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic on-resistance, breakdown mechanisms, thermal design, device availability, and reliability qualification. Static and dynamic characterization was then performed across the full current, voltage, and temperature range of this device to enable effective GaN-based converter design. Static testing was performed with a curve tracer and precision impedance analyzer. A double pulse test setup was constructed and used to measure switching loss and time at the fastest achievable switching speed, and the subsequent overvoltages due to the fast switching were characterized. The results were also analyzed to characterize the effects of cross-talk in the active and synchronous devices of a phase-leg topology with enhancement-mode GaN HFETs. Based on these results and analysis, an accurate loss model was developed for the device under test. Based on analysis of these characterization results, a simplified model was developed to describe the overall switching behavior and some unique features of the device. The consequences of the Miller effect during the turn-on transient were studied to show that no Miller plateau occurs, but rather a decreased gate voltage slope, followed by a sharp drop. The significance of this distinction is derived and explained. GaN performance at elevated temperature was also studied, because turn-on time increases significantly with temperature, and turn-on losses increase as a result. Based on this relationship, a temperature-dependent turn-on model and a linear scaling factor was proposed for estimating turn-on loss in e-mode GaN HFETs

Efficient, High Power Density, Modular Wide Band-gap Based Converters for Medium Voltage Application

Recent advances in semiconductor technology have accelerated developments in medium-voltage direct-current (MVDC) power system transmission and distribution. A DC-DC converter is widely considered to be the most important technology for future DC networks. Wide band-gap (WBG) power devices (i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN) devices) have paved the way for improving the efficiency and power density of power converters by means of higher switching frequencies with lower conduction and switching losses compared to their Silicon (Si) counterparts. However, due to rapid variation of the voltage and current, di/dt and dv/dt, to fully utilize the advantages of the Wide-bandgap semiconductors, more focus is needed to design the printed circuit boards (PCB) in terms of minimizing the parasitic components, which impacts efficiency. The aim of this dissertation is to study the technical challenges associated with the implementation of WBG devices and propose different power converter topologies for MVDC applications. Ship power system with MVDC distribution is attracting widespread interest due to higher reliability and reduced fuel consumption. Also, since the charging time is a barrier for adopting the electric vehicles, increasing the voltage level of the dc bus to achieve the fast charging is considered to be the most important solution to address this concern. Moreover, raising the voltage level reduces the size and cost of cables in the car. Employing MVDC system in the power grid offers secure, flexible and efficient power flow. It is shown that to reach optimal performance in terms of low package inductance and high slew rate of switches, designing a PCB with low common source inductance, power loop inductance, and gate-driver loop are essential. Compared with traditional power converters, the proposed circuits can reduce the voltage stress on switches and diodes, as well as the input current ripple. A lower voltage stress allows the designer to employ the switches and diodes with lower on-resistance RDS(ON) and forward voltage drop, respectively. Consequently, more efficient power conversion system can be achieved. Moreover, the proposed converters offer a high voltage gain that helps the power switches with smaller duty-cycle, which leads to lower current and voltage stress across them. To verify the proposed concept and prove the correctness of the theoretical analysis, the laboratory prototype of the converters using WBG devices were implemented. The proposed converters can provide energy conversion with an efficiency of 97% feeding the nominal load, which is 2% more than the efficiency of the-state-of-the-art converters. Besides the efficiency, shrinking the current ripple leads to 50% size reduction of the input filter inductors

Multilevel Converters for Battery Energy Storage: How Many Levels and Why?

This work explores the potential benefits of cascaded H-bridge multilevel converters in low-voltage applications, particularly grid-attached battery energy storage systems (BESS). While some benefits of these are discussed in literature, this work seeks to create practical, quantitative models for system performance in terms of a number of key performance parameters. These models are then used to find the trends in these performance parameters with an increasingly high order converter, starting to answer the question of how many levels are best. The system performance parameters modelled are power loss, thermal performance and reliability. Wherever practical models and assumptions are validated, be that experimentally or through comparison with existing methods – this work includes a number of experimental series. The resulting trends explored highlight a number of interesting trends, principally: total power loss can be much lower, particularly at high switching frequencies; system thermal performance can be much improved owing to more efficient heatsink utilisation; and due to these thermal benefits, the system reliability based on switching device failure does not suffer as one might expect, and can in fact be higher under some conditions. The investigation also considers the use of cutting-edge switching device technology, such as gallium nitride power transistors, which a multilevel converter enables the use of, and in turn can significantly reduce power dissipation and increase switching frequency. Overall, the work adds new arguments in favour of multilevel converters in such applications and lowers the barrier to practical implementation by answering a number of questions a designer would likely ask. The key novel contributions of this work are the results of the trends that were found in terms of converter power loss, system thermal performance and switching device reliability with respect to multilevel converter order – with the methodologies created for these being somewhat novel in their own right. Along the way, however, other novel work was conducted including: an experimental investigation in to the accuracy of voltage-capacitance curves provided by manufacturers; experimental derivation of relationships for predicting MOSFET body diode performance from readily available device parameters; analysis showing the potential impact of GaN devices on converter efficiency; an experimental validation of GaN device gate turn-on energy; creation and validation of empirical relationship for predicting how heatsink performance varies with more devices of a smaller size; as well as an exploration of whether the extreme small size of some modern power transistors could lead to unexpected thermal cycling issues

Resilient and Real-time Control for the Optimum Management of Hybrid Energy Storage Systems with Distributed Dynamic Demands

A continuous increase in demands from the utility grid and traction applications have steered public attention toward the integration of energy storage (ES) and hybrid ES (HESS) solutions. Modern technologies are no longer limited to batteries, but can include supercapacitors (SC) and flywheel electromechanical ES well. However, insufficient control and algorithms to monitor these devices can result in a wide range of operational issues. A modern day control platform must have a deep understanding of the source. In this dissertation, specialized modular Energy Storage Management Controllers (ESMC) were developed to interface with a variety of ES devices. The EMSC provides the capability to individually monitor and control a wide range of different ES, enabling the extraction of an ES module within a series array to charge or conduct maintenance, while remaining storage can still function to serve a demand. Enhancements and testing of the ESMC are explored in not only interfacing of multiple ES and HESS, but also as a platform to improve management algorithms. There is an imperative need to provide a bridge between the depth of the electrochemical physics of the battery and the power engineering sector, a feat which was accomplished over the course of this work. First, the ESMC was tested on a lead acid battery array to verify its capabilities. Next, physics-based models of lead acid and lithium ion batteries lead to the improvement of both online battery management and established multiple metrics to assess their lifetime, or state of health. Three unique HESS were then tested and evaluated for different applications and purposes. First, a hybrid battery and SC HESS was designed and tested for shipboard power systems. Next, a lithium ion battery and SC HESS was utilized for an electric vehicle application, with the goal to reduce cycling on the battery. Finally, a lead acid battery and flywheel ES HESS was analyzed for how the inclusion of a battery can provide a dramatic improvement in the power quality versus flywheel ES alone

Design and Analysis of a Fully-Integrated Resonant Gate Driver

Several decades ago the resonant gate driving technique was proposed. Given the recent rapid growth in GaN HEMT power device applications for high-frequency power applications, research has been conducted in the power electronics field using resonant gate driving for GaN power devices. Previous research for resonant gate drivers for GaN HEMT devices mostly focused on implementing the gate driving function itself, and mostly for normally-on HEMT devices. The normally-off (enhancement mode) GaN power device was introduced to the commercial market in 2009. A new resonate gate driver is proposed in this work to implement resonant gate driving for commercial high-speed normally-off GaN power devices. The desired resonant condition is configured by different turn-on and turn-off driving pulses with specific driving time and pulse width. Using synchronous timing control within the driver integrated circuit, the power device gate voltage is securely clamped within the expected gate voltage at switching frequencies beyond 10 MHz. In this research, a customized resonant gate driver IC was designed and developed on a commercially-available silicon CMOS process. Compared with current commercial gate driver ICs, our test results demonstrate the effectiveness, advantages and limitations of the proposed gate driver IC for the enhancement-mode GaN power device using alternative resonant gate driving techniques for the first time