609 research outputs found

    Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes for 300-GHz oscillator sources

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    Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in the context of several potential high-impact applications, including sixth generation (6G) and beyond consumer-oriented ultra-broadband multi-gigabit wireless data-links, as well as highresolution imaging, radar, and spectroscopy apparatuses employable in biomedicine, industrial processes, security/defence, and material science. Despite the technological challenges posed by the THz gap, recent scientific advancements suggest the practical viability of THz systems. However, the development of transmitters (Tx) and receivers (Rx) based on compact semiconductor devices operating at THz frequencies is urgently demanded to meet the performance requirements calling from emerging THz applications. Although several are the promising candidates, including high-speed III-V transistors and photo-diodes, resonant tunnelling diode (RTD) technology offers a compact and high performance option in many practical scenarios. However, the main weakness of the technology is currently represented by the low output power capability of RTD THz Tx, which is mainly caused by the underdeveloped and non-optimal device, as well as circuit, design implementation approaches. Indeed, indium phosphide (InP) RTD devices can nowadays deliver only up to around 1 mW of radio-frequency (RF) power at around 300 GHz. In the context of THz wireless data-links, this severely impacts the Tx performance, limiting communication distance and data transfer capabilities which, at the current time, are of the order of few tens of gigabit per second below around 1 m. However, recent research studies suggest that several milliwatt of output power are required to achieve bit-rate capabilities of several tens of gigabits per second and beyond, and to reach several metres of communication distance in common operating conditions. Currently, the shortterm target is set to 5−10 mW of output power at around 300 GHz carrier waves, which would allow bit-rates in excess of 100 Gb/s, as well as wireless communications well above 5 m distance, in first-stage short-range scenarios. In order to reach it, maximisation of the RTD highfrequency RF power capability is of utmost importance. Despite that, reliable epitaxial structure design approaches, as well as accurate physical-based numerical simulation tools, aimed at RF power maximisation in the 300 GHz-band are lacking at the current time. This work aims at proposing practical solutions to address the aforementioned issues. First, a physical-based simulation methodology was developed to accurately and reliably simulate the static current-voltage (IV ) characteristic of indium gallium arsenide/aluminium arsenide (In-GaAs/AlAs) double-barrier RTD devices. The approach relies on the non-equilibrium Green’s function (NEGF) formalism implemented in Silvaco Atlas technology computer-aided design (TCAD) simulation package, requires low computational budget, and allows to correctly model In0.53Ga0.47As/AlAs RTD devices, which are pseudomorphically-grown on lattice-matched to InP substrates, and are commonly employed in oscillators working at around 300 GHz. By selecting the appropriate physical models, and by retrieving the correct materials parameters, together with a suitable discretisation of the associated heterostructure spatial domain through finite-elements, it is shown, by comparing simulation data with experimental results, that the developed numerical approach can reliably compute several quantities of interest that characterise the DC IV curve negative differential resistance (NDR) region, including peak current, peak voltage, and voltage swing, all of which are key parameters in RTD oscillator design. The demonstrated simulation approach was then used to study the impact of epitaxial structure design parameters, including those characterising the double-barrier quantum well, as well as emitter and collector regions, on the electrical properties of the RTD device. In particular, a comprehensive simulation analysis was conducted, and the retrieved output trends discussed based on the heterostructure band diagram, transmission coefficient energy spectrum, charge distribution, and DC current-density voltage (JV) curve. General design guidelines aimed at enhancing the RTD device maximum RF power gain capability are then deduced and discussed. To validate the proposed epitaxial design approach, an In0.53Ga0.47As/AlAs double-barrier RTD epitaxial structure providing several milliwatt of RF power was designed by employing the developed simulation methodology, and experimentally-investigated through the microfabrication of RTD devices and subsequent high-frequency characterisation up to 110 GHz. The analysis, which included fabrication optimisation, reveals an expected RF power performance of up to around 5 mW and 10 mW at 300 GHz for 25 μm2 and 49 μm2-large RTD devices, respectively, which is up to five times higher compared to the current state-of-the-art. Finally, in order to prove the practical employability of the proposed RTDs in oscillator circuits realised employing low-cost photo-lithography, both coplanar waveguide and microstrip inductive stubs are designed through a full three-dimensional electromagnetic simulation analysis. In summary, this work makes and important contribution to the rapidly evolving field of THz RTD technology, and demonstrates the practical feasibility of 300-GHz high-power RTD devices realisation, which will underpin the future development of Tx systems capable of the power levels required in the forthcoming THz applications

    Rectifiers - Analysis and Optimization for Wireless Energy Transfer

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    Design and Development of a Multi-Frequency System for Microwave Heating

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    [ES] La utilización de sistemas de microondas para aplicaciones de calentamiento está muy extendida, principalmente por su uso en el calentamiento doméstico. El volumen de ventas del horno de microondas doméstico refleja un dato curioso: es el electrodoméstico más vendido en el mundo cada año. Por ello, el coste de producción del elemento principal, el magnetrón, presenta unos márgenes de beneficio imbatibles. Sin embargo, los avances en la fabricación de generadores de RF de alta potencia de estado sólido han puesto de manifiesto no solo las limitaciones de los sistemas basados en magnetrón sino también las grandes ventajas de la tecnología de transistores. Actualmente, los amplificadores de potencia de estado sólido han alcanzado una madurez suficiente como para competir en eficiencia, coste y calidad de la onda generada con el magnetrón. Las principales ventajas de los transistores son un reducido tamaño, tensiones de alimentación bajas, un espectro puro en frecuencia, un mayor tiempo de vida y el control digital directo. Los sistemas de microondas con esta tecnología están siendo introducidos en el mercado desde hace diez años, aunque las aplicaciones reales que los utilizan son escasas. La principal razón es la falta de diseños de aplicadores específicos para sacar el máximo provecho a las fuentes de estado sólido. , por tanto, es éste el objetivo de la tesis doctoral. Los sistemas S2MH (Solid-State Microwave Heating) se presentan en esta disertación doctoral como una alternativa que ofrece un calentamiento mejorado. La posibilidad de seleccionar la frecuencia exacta, ajustar la potencia de salida y realizar barridos de fase de forma coherente con múltiples iluminadores proporcionan al sistema un control preciso del proceso de calentamiento. El resultado directo de éste es un calentamiento homogéneo y el uso de la tecnología de microondas en procesos de alto valor añadido y fuerte dependencia con la temperatura. Esta tesis doctoral presenta el trabajo realizado en el diseño y fabricación de dos sistemas S2MH: el primero es un horno estático versátil para diferentes procesos químicos, y el segundo un horno de transporte para el secado de almendras. Estos dos sistemas están formados por el SSMGS (Solid-State Microwave Generator System), que incluye cuatro amplificadores de estado sólido (SSPA) con una generación de la onda coherente, y el aplicador. Para el diseño del SSMGS se han tenido en cuenta los requisitos de potencia y frecuencia de cada aplicación. Se ha utilizado un SSMGS con cuatro PA de 250 W a 2,450 MHz para el horno de aplicaciones químicas, mientras que el secado de almendras necesita cuatro PA de 500 W a 915 MHz. Los dos sistemas de generación de microondas permiten un control individual o combinado de los parámetros de los cuatro módulos amplificadores, i.e., potencia, frecuencia y fase. Todo el proceso de diseño ha sido llevado a cabo mediante modelado multi-físico, poniendo un especial cuidado en las propiedades termofísicas y dieléctricas de los alimentos y soluciones acuosas que tienen una importante dependencia con la temperatura. El comportamiento completo del sistema aplicador se ha estudiado con estas herramientas. Tras la fabricación de los dos prototipos o pruebas de concepto (PoC), los resultados obtenidos presentan un comportamiento similar al modelo y muestran, además, prometedoras mejoras frente a los sistemas actuales. El sistema de aplicaciones químicas presenta mejoras en la distribución de campo, independientemente de la aplicación y la carga. Y el sistema de secado de almendras proporciona un mayor control sobre el proceso evitando la pérdida de material por sobrecalentamiento.[CA] La utilització de sistemes de microones en aplicacions d'escalfament està molt estesa, principalment pel seu us en escalfament domèstic. El volum de ventes del forn de microones domèstic reflexa una informació curiosa: es l'electrodomèstic més venut anualment al món. Per això, el cost de producció del seu element principal, el magnetró, presenta uns marges de benefici imbatibles. No obstant això, els avanços en la fabricació de generadors de RF d'alta potencia d'estat sòlid han posat de manifest tant les limitacions dels sistemes basats en magnetró, com els grans avantatges de la tecnologia de transistors. Actualment, els amplificadors de potència d'estat sòlid son el suficientment madurs com per competir en eficiència, cost i qualitat de l'ona generada amb el magnetró. Els principals avantatges dels transistors son les dimensions reduïdes, tensions d'alimentació baixes, un espectre pur en freqüència, major temps de vida i el control digital directe. Els sistemes de microones amb aquesta tecnologia estan sent introduïts al mercat des de fa deu anys, malgrat les aplicacions reals son escasses. El principal motiu és la falta de dissenys de aplicadors específics per obtindré el màxim profit de les fonts d'estat sòlid. , por tanto, es éste el objetivo de la tesis doctoral. Els sistemes S2MH es presenten en esta dissertació doctoral com una alternativa que ofereix un escalfament millorat. La possibilitat de seleccionar la freqüència exacta, ajustar la potència d'eixida i realitzar un rastreig de fase de forma coherent amb molts il·luminadors proporcionen al sistema un control precís del procés d'escalfament. El resultat directe d'aquest es un escalfament homogeni i el us de la tecnologia de microones en processos d'alt valor afegit i alta sensibilitat a la temperatura. Aquesta dissertació doctoral presenta el treball realitzat en el disseny i fabricació de dos sistemes S2MH: el primer és un forn estàtic i versàtil per a diferent processos químics, i el segon es tracta d'un forn de transport per l'assecatge d'ametles. Tots dos sistemes estan formats pel SSMGS, que inclou quatre amplificadors d'estat sòlid (SSPA) amb generació coherent de l'ona, i l'aplicador. Per al disseny del SSMGS s'han tingut en compte els requisits de potència i freqüència de cada aplicació. S'ha utilitzat un SSMGS amb quatre PA de 250 W a 2,450 MHz per al forn d'aplicacions químiques, mentre que per al d'assecat d'ametla es necessita quatre PA de 500 W a 915 MHz. Ambdós sistemes de generació de microones permeten un control individual o combinat dels paràmetres dels quatre mòduls amplificadors, i.e., potència, freqüència i fase. Tot el procés de disseny ha sigut realitzat amb l'ajuda del modelat multi-físic, prestant una especial atenció a les propietats termofísiques i dielèctriques dels aliments i solucions aquoses, que tenen una important dependència de la temperatura. El comportament complet del sistema aplicador ha sigut estudiat amb estes ferramentes digitals. Després de la fabricació dels dos prototips o proves de concepte (PoC), els resultats obtinguts presenten un comportament similar al model i, a més a més, mostren millores prometedores front als sistemes actuals. El sistema d'aplicacions químiques presenta millores en la distribució de camp, independentment de l'aplicació i la càrrega. I el sistema d'assecatge d'ametlles proporciona un major control sobre el procés, evitant la pèrdua de material per sobreescalfament.[EN] Microwave systems are widely used for heating applications, mainly domestic food heating. The microwave oven sales figures place it as the first domestic appliance, giving its core element, the magnetron, an unbeatable production cost margin. However, recent improvements in RF high-power generator manufacturing have pointed out not only the limitations of these systems based on the magnetron but also the main benefits of the transistors technology. Nowadays, solid-state power amplifiers are mature enough to compete in efficiency, cost and quality with the magnetron. Transistors' main benefits are their reduced size, low operation voltages, pure frequency spectrum, lifetime, and straightforward digital control. Microwave systems based on solid-state power amplifiers have been recently introduced, although the real applications making use of them are rare. The main issue is the lack of applicator designs for specific solid-state sources that fully exploit the mentioned advantages; therefore, this is the main objective of the present PhD thesis. Solid-State Microwave Heating (S2MH) systems are presented in this PhD dissertation as an alternative that offers enhanced heating. Fine frequency selection, adjustable output power and coherent phase sweep in multiple outputs provide the system with accurate control over the heating process. The direct outcome of this control is the production of homogeneous heating and the application of microwave technology into high-added-value temperature-sensitive processes. The complete design and manufacture of two S2MH systems have been carried out and presented in this PhD thesis. The two designed systems are a multi-process chemical lab batch oven and an almond drying conveyorized oven. These two systems are composed of the Solid-State Microwave Generator System (SSMGS), consisting of four Solid-State Power Amplifiers (SSPA) with coherent wave generation, and the applicator. The design of the SSMGS has been carried out according to the power and frequency requirements of the application. A 4 x 250 W SSPA at 2,450 MHz SSMGS has been used for the chemical processes oven, while the almond drying application needs 4 x 500 W SSPA at 915 MHz. Both SSMGS allow the individual or combined digital control of the parameters of the four amplifying modules, i.e., power, frequency and phase. Multiphysics modelling has been thoroughly studied with special attention to the temperature-dependent thermophysical and dielectric properties of food and liquid solutions. The overall applicators' behaviour has been analysed with this tool. After completing the two PoC (Proof of Concept), the results show good agreement with the models. Both PoCs have shown promising improvements to the current state-of-the-art systems. The chemical applications PoC shows electromagnetic field distribution improvements, independent of the application or load. On the other hand, the almonds drying system provides increased control over the process avoiding material losses through overheating.Santón Pons, P. (2022). Design and Development of a Multi-Frequency System for Microwave Heating [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/19132

    Spin Detection, Amplification, and Microwave Squeezing with Kinetic Inductance Parametric Amplifiers

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    Superconducting parametric amplifiers operating at microwave frequencies have become an essential component in circuit quantum electrodynamics experiments. They are used to amplify signals at the single-photon level, while adding only the minimum amount of noise required by quantum mechanics. To achieve gain, energy is transferred from a pump to the signal through a non-linear interaction. A common strategy to enhance this process is to place the non-linearity inside a high quality factor resonator, but so far, quantum limited amplifiers of this type have only been demonstrated from designs that utilize Josephson junctions. Here we demonstrate the Kinetic Inductance Parametric Amplifier (KIPA), a three-wave mixing resonant parametric amplifier that exploits the kinetic inductance intrinsic to thin films of disordered superconductors. We then utilize the KIPA for measurements of 209Bi spin ensembles in Si. First, we show that a KIPA can serve simultaneously as a high quality factor resonator for pulsed electron spin resonance measurements and as a low-noise parametric amplifier. Using this dual-functionality, we enhance the signal to noise ratio of our measurements by more than a factor of seven and ultimately achieve a measurement sensitivity of 2.4 x 10^3 spins. Then we show that pushed to the high-gain limit, KIPAs can serve as a `click'-detector for microwave wave packets by utilizing a hysteretic transition to a self-oscillating state. We calibrate the detector's sensitivity to be 3.7 zJ and then apply it to measurements of electron spin resonance. Finally, we demonstrate the suitability of the KIPA for generating squeezed vacuum states. Using a cryogenic noise source, we first confirm the KIPAs in our experiment to be quantum limited amplifiers. Then, using two KIPAs arranged in series, we make direct measurements of vacuum noise squeezing, where we generate itinerant squeezed states with minimum uncertainty more than 7 dB below the standard quantum limit. High quality factor resonators have also recently been used to achieve strong coupling between the spins of single electrons in gate-defined quantum dots and microwave photons. We present our efforts to achieve the equivalent goal for the 31P flip-flop qubit. In doing so, we confirm previous predictions that the superconducting material MoRe would produce magnetic field-resilient resonators and demonstrate that it has kinetic inductance equivalent to the popular material NbTiN

    Analysis and Design of Silicon based Integrated Circuits for Radio Frequency Identification and Ranging Systems at 24GHz and 60GHz Frequency Bands

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    This scientific research work presents the analysis and design of radio frequency (RF) integrated circuits (ICs) designed for two cooperative RF identification (RFID) proof of concept systems. The first system concept is based on localizable and sensor-enabled superregenerative transponders (SRTs) interrogated using a 24GHz linear frequency modulated continuous wave (LFMCW) secondary radar. The second system concept focuses on low power components for a 60GHz continuous wave (CW) integrated single antenna frontend for interrogating close range passive backscatter transponders (PBTs). In the 24GHz localizable SRT based system, a LFMCW interrogating radar sends a RF chirp signal to interrogate SRTs based on custom superregenerative amplifier (SRA) ICs. The SRTs receive the chirp and transmit it back with phase coherent amplification. The distance to the SRTs are then estimated using the round trip time of flight method. Joint data transfer from the SRT to the interrogator is enabled by a novel SRA quench frequency shift keying (SQ-FSK) based low data rate simplex communication. The SRTs are also designed to be roll invariant using bandwidth enhanced microstrip patch antennas. Theoretical analysis is done to derive expressions as a function of system parameters including the minimum SRA gain required for attaining a defined range and equations for the maximum number of symbols that can be transmitted in data transfer mode. Analysis of the dependency of quench pulse characteristics during data transfer shows that the duty cycle has to be varied while keeping the on-time constant to reduce ranging errors. Also the worsening of ranging precision at longer distances is predicted based on the non-idealities resulting from LFMCWchirp quantization due to SRT characteristics and is corroborated by system level measurements. In order to prove the system concept and study the semiconductor technology dependent factors, variants of 24GHz SRA ICs are designed in a 130nm silicon germanium (SiGe) bipolar complementary metal oxide technology (BiCMOS) and a partially depleted silicon on insulator (SOI) technology. Among the SRA ICs designed, the SiGe-BiCMOS ICs feature a novel quench pulse shaping concept to simultaneously improve the output power and minimum detectable input power. A direct antenna drive SRA IC based on a novel stacked transistor cross-coupled oscillator topology employing this concept exhibit one of the best reported combinations of minimum detected input power level of −100 dBm and output power level of 5.6 dBm, post wirebonding. The SiGe stacked transistor with base feedback capacitance topology employed in this design is analyzed to derive parameters including the SRA loop gain for design optimization. Other theoretical contributions include the analysis of the novel integrated quench pulse shaping circuit and formulas derived for output voltage swing taking bondwire losses into account. Another SiGe design variant is the buffered antenna drive SRA IC having a measured minimum detected input power level better than −80 dBm, and an output power level greater than 3.2 dBm after wirebonding. The two inputs and outputs of this IC also enables the design of roll invariant SRTs. Laboratory based ranging experiments done to test the concepts and theoretical considerations show a maximum measured distance of 77m while transferring data at the rate of 0.5 symbols per second using SQ-FSK. For distances less than 10m, the characterized accuracy is better than 11 cm and the precision is better than 2.4 cm. The combination of the maximum range, precision and accuracy are one of the best reported among similar works in literature to the author’s knowledge. In the 60GHz close range CW interrogator based system, the RF frontend transmits a continuous wave signal through the transmit path of a quasi circulator (QC) interfaced to an antenna to interrogate a PBT. The backscatter is received using the same antenna interfaced to the QC. The received signal is then amplified and downconverted for further processing. To prove this concept, two optimized QC ICs and a downconversion mixer IC are designed in a 22nm fully depleted SOI technology. The first QC is the transmission lines based QC which consumes a power of 5.4mW, operates at a frequency range from 56GHz to 64GHz and occupies an area of 0.49mm2. The transmit path loss is 5.7 dB, receive path gain is 2 dB and the tunable transmit path to receive path isolation is between 20 dB and 32 dB. The second QC is based on lumped elements, and operates in a relatively narrow bandwidth from 59.6GHz to 61.5GHz, has a gain of 8.5 dB and provides a tunable isolation better than 20 dB between the transmit and receive paths. This QC design also occupies a small area of 0.34mm² while consuming 13.2mW power. The downconversion is realized using a novel folded switching stage down conversion mixer (FSSDM) topology optimized to achieve one of the best reported combination of maximum voltage conversion gain of 21.5 dB, a factor of 2.5 higher than reported state-of-the-art results, and low power consumption of 5.25mW. The design also employs a unique back-gate tunable intermediate frequency output stage using which a gain tuning range of 5.5 dB is attained. Theoretical analysis of the FSSDM topology is performed and equations for the RF input stage transconductance, bandwidth, voltage conversion gain and gain tuning are derived. A feasibility study for the components of the 60GHz integrated single antenna interrogator frontend is also performed using PBTs to prove the system design concept.:1 Introduction 1 1.1 Motivation and Related Work . . . . . . . . . . . . . . . . . . . . . 1 1.2 Scope and Functional Specifications . . . . . . . . . . . . . . . . . 4 1.3 Objectives and Structure . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Features and Fundamentals of RFIDs and Superregenerative Amplifiers 9 2.1 RFID Transponder Technology . . . . . . . . . . . . . . . . . . . . 9 2.1.1 Chipless RFID Transponders . . . . . . . . . . . . . . . . . 10 2.1.2 Semiconductor based RFID Transponders . . . . . . . . . . 11 2.1.2.1 Passive Transponders . . . . . . . . . . . . . . . . 11 2.1.2.2 Active Transponders . . . . . . . . . . . . . . . . . 13 2.2 RFID Interrogator Architectures . . . . . . . . . . . . . . . . . . . 18 2.2.1 Interferometer based Interrogator . . . . . . . . . . . . . . . 19 2.2.2 Ultra-wideband Interrogator . . . . . . . . . . . . . . . . . . 20 2.2.3 Continuous Wave Interrogators . . . . . . . . . . . . . . . . 21 2.3 Coupling Dependent Range and Operating Frequencies . . . . . . . 25 2.4 RFID Ranging Techniques . . . . . . . . . . . . . . . . . . . . . . . 28 2.4.0.1 Received Signal Strength based Ranging . . . . . 28 2.4.0.2 Phase based Ranging . . . . . . . . . . . . . . . . 30 2.4.0.3 Time based Ranging . . . . . . . . . . . . . . . . . 30 2.5 Architecture Selection for Proof of Concept Systems . . . . . . . . 32 2.6 Superregenerative Amplifier (SRA) . . . . . . . . . . . . . . . . . . 35 2.6.1 Fundamentals . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.6.2 Modes of Operation . . . . . . . . . . . . . . . . . . . . . . 42 2.6.3 Frequency Domain Characteristics . . . . . . . . . . . . . . 45 2.7 Semiconductor Technologies for RFIC Design . . . . . . . . . . . . 48 2.7.1 Silicon Germanium BiCMOS . . . . . . . . . . . . . . . . . 48 2.7.2 Silicon-on-Insulator . . . . . . . . . . . . . . . . . . . . . . . 48 3 24GHz Superregenerative Transponder based Identification and Rang- ing System 51 3.1 System Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 3.1.1 SRT Identification and Ranging . . . . . . . . . . . . . . . . 51 3.1.2 Power Link Analysis . . . . . . . . . . . . . . . . . . . . . . 55 3.1.3 Non-idealities . . . . . . . . . . . . . . . . . . . . . . . . . . 59 3.1.4 SRA Quench Frequency Shift Keying for data transfer . . . 61 3.1.5 Knowledge Gained . . . . . . . . . . . . . . . . . . . . . . . 63 3.2 RFIC Designs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 3.2.1 Low Power Direct Antenna Drive CMOS SRA IC . . . . . . 66 3.2.1.1 Circuit analysis and design . . . . . . . . . . . . . 66 3.2.1.2 Characterization . . . . . . . . . . . . . . . . . . . 69 3.2.2 Direct Antenna Drive SiGe SRA ICs . . . . . . . . . . . . . 71 3.2.2.1 Stacked Transistor Cross-coupled Quenchable Oscillator . . . . . . . . . . . . . . . . . . . . . . . . 72 3.2.2.1.1 Resonator . . . . . . . . . . . . . . . . . . 72 3.2.2.1.2 Output Network . . . . . . . . . . . . . . 75 3.2.2.1.3 Stacked Transistor Cross-coupled Pair and Loop Gain . . . . . . . . . . . . . . . . . 77 3.2.2.2 Quench Waveform Design . . . . . . . . . . . . . . 85 3.2.2.3 Characterization . . . . . . . . . . . . . . . . . . . 89 3.2.3 Antenna Diversity SiGe SRA IC with Integrated Quench Pulse Shaping . . . . . . . . . . . . . . . . . . . . . . . . . . 91 3.2.3.1 Circuit Analysis and Design . . . . . . . . . . . . 91 3.2.3.1.1 Crosscoupled Pair and Sampling Current 94 3.2.3.1.2 Common Base Input Stage . . . . . . . . 95 3.2.3.1.3 Cascode Output Stage . . . . . . . . . . . 96 3.2.3.1.4 Quench Pulse Shaping Circuit . . . . . . 96 3.2.3.1.5 Power Gain . . . . . . . . . . . . . . . . . 99 3.2.3.2 Characterization . . . . . . . . . . . . . . . . . . . 102 3.2.4 Knowledge Gained . . . . . . . . . . . . . . . . . . . . . . . 103 3.3 Proof of Principle System Implementation . . . . . . . . . . . . . . 106 3.3.1 Superregenerative Transponders . . . . . . . . . . . . . . . 106 3.3.1.1 Bandwidth Enhanced Microstrip Patch Antennas 108 3.3.2 FMCW Radar Interrogator . . . . . . . . . . . . . . . . . . 114 3.3.3 Chirp Z-transform Based Data Analysis . . . . . . . . . . . 116 4 60GHz Single Antenna RFID Interrogator based Identification System 121 4.1 System Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 4.2 RFIC Designs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 4.2.1 Quasi-circulator ICs . . . . . . . . . . . . . . . . . . . . . . 125 4.2.1.1 Transmission Lines based Quasi-Circulator IC . . 126 4.2.1.2 Lumped Elements WPD based Quasi-Circulator . 130 4.2.1.3 Characterization . . . . . . . . . . . . . . . . . . . 134 4.2.1.4 Knowledge Gained . . . . . . . . . . . . . . . . . . 135 4.2.2 Folded Switching Stage Downconversion Mixer IC . . . . . 138 4.2.2.1 FSSDM Circuit Design . . . . . . . . . . . . . . . 138 4.2.2.2 Cascode Transconductance Stage . . . . . . . . . . 138 4.2.2.3 Folded Switching Stage with LC DC Feed . . . . . 142 4.2.2.4 LO Balun . . . . . . . . . . . . . . . . . . . . . . . 145 4.2.2.5 Backgate Tunable IF Stage and Offset Correction 146 4.2.2.6 Voltage Conversion Gain . . . . . . . . . . . . . . 147 4.2.2.7 Characterization . . . . . . . . . . . . . . . . . . . 150 4.2.2.8 Knowledge Gained . . . . . . . . . . . . . . . . . . 151 4.3 Proof of Principle System Implementation . . . . . . . . . . . . . . 154 5 Experimental Tests 157 5.1 24GHz System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 5.1.1 Ranging Experiments . . . . . . . . . . . . . . . . . . . . . 157 5.1.2 Roll Invariance Experiments . . . . . . . . . . . . . . . . . . 158 5.1.3 Joint Ranging and Data Transfer Experiments . . . . . . . 158 5.2 60GHz System Detection Experiments . . . . . . . . . . . . . . . . 165 6 Summary and Future Work 167 Appendices 171 A Derivation of Parameters for CB Amplifier with Base Feedback Capac- itance 173 B Definitions 177 C 24GHz Experiment Setups 179 D 60 GHz Experiment Setups 183 References 185 List of Original Publications 203 List of Abbreviations 207 List of Symbols 213 List of Figures 215 List of Tables 223 Curriculum Vitae 22

    High Efficiency Low Power Rectifiers and ZVS DC to DC Converters for RF Energy Harvesting

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    In recent years, advancements in modern technologies have grown the demand for low-power wireless devices. Considering that enhancing the lifetime of the required battery to maintain the operation of these devices is still impractical, harvesting energy from ambient sources has become a promising solution to power portable low power electronic devices. Harvesting ambient energy from the electromagnetic wave (EM), which is referred to as radio frequency energy harvesting (RFEH), is one of the most popular power extracting methods. Scavenging energy can be used to fully supply the power required for wearable electronics devices, RFID, medical implantable devices, wireless sensors, internet of things (IoT) etc. RF energy is readily available in urban environments due to the abundant existence of HF and UHF technologies. Therefore, there is a great interest in studying systems working in UHF bands, including 300MHz to 3GHz frequencies. Radio frequency energy harvesting is a method which converts the received signals into electricity. This technique offers various environmentally friendly alternative energy sources. Specifically, RFEH has interesting attributes that make it very practical for low-power electronics and wireless sensor networks (WSNs). Ambient RF energy can be provided by commercial RF broadcasting stations such as Wi-Fi, GSM, radar or TV. In this study, particular attention is given to design efficient low power circuits suitable to be applied for RFEH as a green technology, which is very suitable for overcoming problems such as powering wireless sensors located in inaccessible places or harsh environments, the possibility to power directly electronic devices, recharge batteries and etc. In RFEH, it is very important to enhance the efficiency of the circuits and systems to maximize the amount of harvested energy. This thesis is mainly concerned with the design, simulation, and implementation of AC to DC circuits including phase shifter, rectifier, and DC to DC converter which is specifically designed for RFEH. It can be applied in various applications such as telecommunications, wireless sensors, medical devices, wireless charging, Internet of Things (IoT) and etc. In the designed system in this thesis, the signal must be passed through a phase shifter, rectifier, and voltage multiplier to reach the required level of output voltage. In another word, this system rectifies the sinusoidal AC waveform to DC and multiplies it to get higher voltages. In this thesis, we propose 1 and 7-stage rectifiers, phase shifters and isolated/non-isolated DC to DC converters will be investigated individually in a general manner and integrated together to have the desired range of outputs for considered applications. This research methodology has three major phases: Phase 1: Theoretical analyses, Phase 2: Simulation investigations and Phase 3: Practical verification. This thesis presents a review on the history of different circuits used to design a low power system for EH. Certain achievements in recent decades make power harvesting a reality, capable of providing alternative sources of energy for a wider range of applications. This review provides a summary of RFEH technologies to use as a guide for the design of RFEH units. Additionally, comprehensive analysis and discussions of various designs of rectifiers, isolated and non-isolated DC to DC converters and phase shifters in addition to their trade-offs for RF energy harvesting purposes are included. In this thesis, novel designs of Dickson rectifiers with high voltage gain and efficiency operating with an input frequency of 915MHz is presented. The proposed circuits introduce a new method of deriving output characteristics of rectification circuit in terms of voltage. The design consists of different stages of the Dickson voltage multiplier. The rectifiers benefit from two input AC sources with 180° phase shift. This Dickson circuit is further discussed in two levels; the first one is a 1-stage rectifier operating with Schottky diodes or diode-connected MOSFETs, and the second is a 7-stage rectifier discussed with both Schottky diodes and diode-connected MOSFETs producing higher output voltages. Furthermore, the prototype of 1-stage rectifier is presented where the input voltage is between -10dBm and 2dBm and the output voltage gained is from 318mV to 1700mV, respectively. Also, the prototype of 7-stage rectifier is presented where the input voltage is -10dBm, -8dBm and -6dBm and the output voltage is gained 1220mV, 1330mV and 1550mV, respectively. Additionally, a new non-isolated high voltage gain, high efficiency zero voltage switching (ZVS) resonant DC to DC converter working under ZVS condition is introduced, which can work in high frequencies with high power conversion rate as well as low losses. The proposed converter can provide 5V output from 350mV input voltage with efficiency of 72.8%. Furthermore, we proposed an isolated DC to DC converter which provides the output voltage of 6V with efficiency of 68%. Due to have an isolation transformer, this converter prevents electric shocks which makes it suitable for applications requiring more safety. All the theoretical analyses are verified by MATLAB and circuits are simulated in PSIM. In addition, two combinations of high voltage gain circuits are introduced for low power applications such as RFEH. The first combination consists of a phase shifter, 1-stage rectifier and resonant ZVS DC to DC converter which has an output voltage of 6V with an efficiency of 71%. The second consists of a phase shifter, 1-stage rectifier and isolated resonant ZVS DC to DC converter with output voltage and efficiency of 5V and 65%, respectively. In conclusion, this thesis is presented in 6 chapters discussing the designed high voltage gain high efficiency low power circuits to convert AC input with frequency of 915MHz to DC output. The circuits can be applied in different low power applications such as energy harvesting systems specifically RFEH

    Millimetre-Resolution Photonics-Assisted Radar

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    Radar is essential in applications such as anti-collision systems for driving, airport security screening, and contactless vital sign detection. The demand for high-resolution and real-time recognition in radar applications is growing, driving the development of electronic radars with increased bandwidth, higher frequency, and improved reconfigurability. However, conventional electronic approaches are challenging due to limitations in synthesising radar signals, limiting performance. In contrast, microwave photonics-enabled radars have gained interest because they offer numerous benefits compared to traditional electronic methods. Photonics-assisted techniques provide a broad fractional bandwidth at the optical carrier frequency and enable spectrum manipulation, producing wideband and high-resolution radar signals in various formats. However, photonic-based methods face limitations like low time-frequency linearity due to the inherent nonlinearity of lasers, restricted RF bandwidth, limited stability of the photonic frequency multipliers, and difficulties in achieving extended sensing with dispersion-based techniques. In response to these challenges, this thesis presents approaches for generating broadband radar signals with high time-frequency linearity using recirculated unidirectional optical frequency-shifted modulation. The photonics-assisted system allows flexible bandwidth tuning from sub-GHz to over 30 GHz and requires only MHz-level electronics. Such a system offers millimetre-level range resolution and a high imaging refresh rate, detecting fast-moving objects using the ISAR technique. With millimetre-level resolution and micrometre accuracy, this system supports contactless vital sign detection, capturing precise respiratory patterns from simulators and a living body using a cane toad. In the end, we highlight the promise of merging radar and LiDAR, foreshadowing future advancements in sensor fusion for enhanced sensing performance and resilience

    7° Jornadas ITEE 2023

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    En esta publicación se reúnen los trabajos y resúmenes extendidos presentados en las VII Jornadas de Investigación, Transferencia, Extensión y Enseñanza (ITEE), de la Facultad de Ingeniería de la Universidad Nacional de La Plata, organizadas por la Secretaría de Investigación y Transferencia de dicha facultad, que tuvieron lugar entre el 25 y el 27 de abril de 2023.Facultad de Ingenierí
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