Broadband RF Front-End Design for Multi-Standard Receiver with High-Linearity and Low-Noise Techniques

Future wireless communication devices must support multiple standards and features on a single-chip. The trend towards software-defined radio requires flexible and efficient RF building blocks which justifies the adoption of broadband receiver front-ends in modern and future communication systems. The broadband receiver front-end significantly reduces cost, area, pins, and power, and can process several signal channels simultaneously. This research is mainly focused on the analysis and realization of the broadband receiver architecture and its various building blocks (LNA, Active Balun-LNA, Mixer, and trans-impedance amplifier) for multi-standard applications. In the design of the mobile DTV tuner, a direct-conversion receiver architecture is adopted achieving low power, low cost, and high dynamic-range for DVB-H standard. The tuner integrates a single-ended RF variable gain amplifier (RFVGA), a current-mode passive mixer, and a combination of continuous and discrete-time baseband filter with built-in anti-aliasing. The proposed RFVGA achieves high dynamic-range and gain-insensitive input impedance matching performance. The current-mode passive mixer achieves high gain, low noise, and high linearity with low power supplies. A wideband common-gate LNA is presented that overcomes the fundamental trade-off between power and noise match without compromising its stability. The proposed architecture can achieve the minimum noise figure over the previously reported feedback amplifiers in common-gate configuration. The proposed architecture achieves broadband impedance matching, low noise, large gain, enhanced linearity, and wide bandwidth concurrently by employing an efficient and reliable dual negative-feedback. For the wideband Inductorless Balun-LNA, active single-to-differential architecture has been proposed without using any passive inductor on-chip which occupies a lot of silicon area. The proposed Balun-LNA features lower power, wider bandwidth, and better gain and phase balance than previously reported architectures of the same kind. A surface acoustic wave (SAW)-less direct conversion receiver targeted for multistandard applications is proposed and fabricated with TSMC 0.13?m complementary metal-oxide-semiconductor (CMOS) technology. The target is to design a wideband SAW-less direct coversion receiver with a single low noise transconductor and current-mode passive mixer with trans-impedance amplifier utilizing feed-forward compensation. The innovations in the circuit and architecture improves the receiver dynamic range enabling highly linear direct-conversion CMOS front-end for a multi-standard receiver

Survey on individual components for a 5 GHz receiver system using 130 nm CMOS technology

La intención de esta tesis es recopilar información desde un punto de vista general sobre los diferentes tipos de componentes utilizados en un receptor de señales a 5 GHz utilizando tecnología CMOS. Se ha realizado una descripción y análisis de cada uno de los componentes que forman el sistema, destacando diferentes tipos de configuraciones, figuras de mérito y otros parámetros. Se muestra una tabla resumen al final de cada sección, comparando algunos diseños que se han ido presentando a lo largo de los años en conferencias internacionales de la IEEE.The intention of this thesis is to gather information from an overview point about the different types of components used in a 5 GHz receiver using CMOS technology. A review of each of the components that form the system has been made, highlighting different types of configurations, figure of merits and parameters. A summary table is shown at the end of each section, comparing many designs that have been presented over the years at international conferences of the IEEE.Departamento de Ingeniería Energética y FluidomecánicaGrado en Ingeniería en Electrónica Industrial y Automátic

Architectures and Circuit Techniques for High-Performance Field-Programmable CMOS Software Defined Radios

Next-generation wireless communication systems put more stringent performance requirements on the wireless RF receiver circuits. Sensitivity, linearity, bandwidth and power consumption are some of the most important specifications that often face tightly coupled tradeoffs between them. To increase the data throughput, a large number of fragmented spectrums are being introduced to the wireless communication standards. Carrier aggregation technology needs concurrent communication across several non-contiguous frequency bands, which results in a rapidly growing number of band combinations. Supporting all the frequency bands and their aggregation combinations increases the complexity of the RF receivers. Highly flexible software defined radio (SDR) is a promising technology to address these applications scenarios with lower complexity by relaxing the specifications of the RF filters or eliminating them. However, there are still many technology challenges with both the receiver architecture and the circuit implementations. The performance requirements of the receivers can also vary across different application scenario and RF environments. Field-programmable dynamic performance tradeoff can potentially reduce the power consumption of the receiver. In this dissertation, we address the performance enhancement challenges in the wideband SDRs by innovations at both the circuit building block level and the receiver architecture level. A series of research projects are conducted to push the state-of-the-art performance envelope and add features such as field-programmable performance tradeoff and concurrent reception. The projects originate from the concept of thermal noise canceling techniques and further enhance the RF performance and add features for more capable SDR receivers. Four generations of prototype LNA or receiver chips are designed, and each of them pushes at least one aspect of the RF performance such as bandwidth, linearity, and NF. A noise-canceling distributed LNA breaks the tradeoff between NF and RF bandwidth by introducing microwave circuit techniques from the distributed amplifiers. The LNA architecture uniquely provides ultra high bandwidth and low NF at low frequencies. A family of field-programmable LNA realized field-programmable performance tradeoff with current-reuse programmable transconductance cells. Interferer-reflecting loops can be applied around the LNAs to improve their input linearity by rejecting the out-of-band interferers with a wideband low in- put impedance. A low noise transconductance amplifier (LNTA) that operates in class-AB-C is invented to can handle rail-to-rail out-of-band blocker without saturation. Class-AB and class-C transconductors form a composite amplifier to increase the linear range of the input voltage. A new antenna interface named frequency-translational quadrature-hybrid (FTQH) breaks the input impedance matching requirement of the LNAs by introducing quadrature hybrid couplers to the CMOS RFIC design. The FTQH receiver achieves wideband sub-1dB NF and supports scalable massive frequency-agile concurrent reception

Novel RF/Microwave Circuits And Systems for Lab on-Chip/on-Board Chemical Sensors

Recent research focuses on expanding the use of RF/Microwave circuits and systems to include multi-disciplinary applications. One example is the detection of the dielectric properties of chemicals and bio-chemicals at microwave frequencies, which is useful for pharmaceutical applications, food and drug safety, medical diagnosis and material characterization. Dielectric spectroscopy is also quite relevant to detect the frequency dispersive characteristics of materials over a wide frequency range for more accurate detection. In this dissertation, on-chip and on-board solutions for microwave chemical sensing are proposed. An example of an on-chip dielectric detection technique for chemical sensing is presented. An on-chip sensing capacitor, whose capacitance changes when exposed to material under test (MUT), is a part of an LC voltage-controlled oscillator (VCO). The VCO is embedded inside a frequency synthesizer to convert the change in the free runing frequency frequency of the VCO into a change of its input voltage. The system is implemented using 90 nm CMOS technology and the permittivities of MUTs are evaluated using a unique detection procedure in the 7-9 GHz frequency range with an accuracy of 3.7% in an area of 2.5 × 2.5 mm^2 with a power consumption of 16.5 mW. The system is also used for binary mixture detection with a fractional volume accuracy of 1-2%. An on-board miniaturized dielectric spectroscopy system for permittivity detec- tion is also presented. The sensor is based on the detection of the phase difference be- tween the input and output signals of cascaded broadband True-Time-Delay (TTD) cells. The sensing capacitor exposed to MUTs is a part of the TTD cell. The change of the permittivity results in a change of the phase of the microwave signal passing through the TTD cell. The system is fabricated on Rogers Duroid substrates with a total area of 8 × 7.2 cm2. The permittivities of MUTs are detected in the 1-8 GHz frequency range with a detection accuracy of 2%. Also, the sensor is used to extract the fractional volumes of mixtures with accuracy down to 1%. Additionally, multi-band and multi-standard communication systems motivate the trend to develop broadband front-ends covering all the standards for low cost and reduced chip area. Broadband amplifiers are key building blocks in wideband front-ends. A broadband resistive feedback low-noise amplifier (LNA) is presented using a composite cross-coupled CMOS pair for a higher gain and reduced noise figure. The LNA is implemented using 90 nm CMOS technology consuming 18 mW in an area of 0.06 mm2. The LNA shows a gain of 21 dB in the 2-2300 MHz frequency range, a minimum noise figure of 1.4 dB with an IIP3 of -1.5 dBm. Also, a four-stage distributed amplifier is presented providing bandwidth extension with 1-dB flat gain response up to 16 GHz. The flat extended bandwidth is provided using coupled inductors in the gate line with series peaking inductors in the cascode gain stages. The amplifier is fabricated using 180 nm CMOS technology in an area of 1.19 mm2 achieving a power gain of 10 dB, return losses better than 16 dB, noise figure of 3.6-4.9 dB and IIP3 of 0 dBm with 21 mW power consumption. All the implemented circuits and systems in this dissertation are validated, demonstrated and published in several IEEE Journals and Conferences

Millimeter-Wave Super-Regenerative Receivers for Wireless Communication and Radar

Today’s world is becoming increasingly automated and interconnected with billions of smart devices coming online, leading to a steep rise in energy consumption from small microelectronics. This coincides with an urgent push to transform global energy production to green energies, causing disruptions and energy shortages, and making the case for efficient energy use ever more pressing. Two major areas where high growth is expected are the fields of wireless communication and radar sensors. Millimeter-wave frequency bands are planned for fifth-generation (5G) and sixth-generation (6G) cellular communication standards, as well as automotive frequency-modulated continuous wave (FMCW) radar systems for driving assistance and automation. Fast silicon-based technologies enable these advances by operating at high maximum frequencies, such as the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies. However, even the fastest transistors suffer from low and energy expensive gains at millimeter-wave frequencies. Rather than incremental improvements in circuit efficiency using conventional approaches, a disruptive revolution for green microelectronics could be enabled by exploring the low-power benefits of the super-regenerative receiver for some applications. The super-regenerative receiver uses a regenerative oscillator circuit to increase the gain by positive feedback, through coupling energy from the output back into the input. Careful bias and control of the circuit enables a very large gain from a small number of transistors and a very low energy dissipation. Thus, the super-regenerative oscillator could be used to replace amplifier circuits in high data rate wireless communication systems, or as active reflectors to increase the range of FMCW radar systems, greatly reducing the power consumption. The work in this thesis presents fundamental scientific research into the topic of energy-efficient millimeter-wave super-regenerative receivers for use in civilian wireless communication and radar applications. This research work covers the theory, analysis, and simulations, all the way up to the proof of concept, hardware realization, and experimental characterization. Analysis and modeling of regenerative oscillator circuits is presented and used to improve the understanding of the circuit operation, as well as design goals according to the specific application needs. Integrated circuits are investigated and characterized as a proof of concept for a high data rate wireless communication system operating between 140–220 GHz, and an automotive radar system operating at 60 GHz. Amplitude and phase regeneration capabilities for complex modulation are investigated, and principles for spectrum characterization are derived. The circuits are designed and fabricated in a 130 nm SiGe HBT technology, combining bipolar and complementary metal-oxide semiconductor (BiCMOS) transistors. To prove the feasibility of the research concepts, the work achieves a wireless communication link at 16 Gbit/s over 20 cm distance with quadrature amplitude modulation (QAM), which is a world record for the highest data rate ever reported in super-regenerative circuits. This was powered by a super-regenerative oscillator circuit operating at 180 GHz and providing 58 dB of gain. Energy efficiency is also considerably high, drawing 8.8 mW of dc power consumption, which corresponds to a highly efficient 0.6 pJ/bit. Packaging and module integration innovations were implemented for the system experiments, and additional broadband circuits were investigated to generate custom quench waveforms to further enhance the data rate. For radar active reflectors, a regenerative gain of 80 dB is achieved at 60 GHz from a single circuit, which is the best in its frequency range, despite a low dc power consumption of 25 mW

Continuous-time low-pass filters for integrated wideband radio receivers

This thesis concentrates on the design and implementation of analog baseband continuous-time low-pass filters for integrated wideband radio receivers. A total of five experimental analog baseband low-pass filter circuits were designed and implemented as a part of five single-chip radio receivers in this work. After the motivation for the research work presented in this thesis has been introduced, an overview of analog baseband filters in radio receivers is given first. In addition, a review of the three receiver architectures and the three wireless applications that are adopted in the experimental work of this thesis is presented. The relationship between the integrator non-idealities and integrator Q-factor, as well as the effect of the integrator Q-factor on the filter frequency response, are thoroughly studied on the basis of a literature review. The theoretical study that is provided is essential for the gm-C filter synthesis with non-ideal lossy integrators that is presented after the introduction of different techniques to realize integrator-based continuous-time low-pass filters. The filter design approach proposed for gm-C filters is original work and one of the main points in this thesis, in addition to the experimental IC implementations. Two evolution versions of fourth-order 10-MHz opamp-RC low-pass filters designed and implemented for two multicarrier WCDMA base-station receivers in a 0.25-µm SiGe BiCMOS technology are presented, along with the experimental results of both the low-pass filters and the corresponding radio receivers. The circuit techniques that were used in the three gm-C filter implementations of this work are described and a common-mode induced even-order distortion in a pseudo-differential filter is analyzed. Two evolution versions of fifth-order 240-MHz gm-C low-pass filters that were designed and implemented for two single-chip WiMedia UWB direct-conversion receivers in a standard 0.13-µm and 65-nm CMOS technology, respectively, are presented, along with the experimental results of both the low-pass filters and the second receiver version. The second UWB filter design was also embedded with an ADC into the baseband of a 60-GHz 65-nm CMOS radio receiver. In addition, a third-order 1-GHz gm-C low-pass filter was designed, rather as a test structure, for the same receiver. The experimental results of the receiver and the third gm-C filter implementation are presented

Design and Characterization of Circuits for Next-Generation Wireless Communications Systems

Demand for wireless data transfer has been increasing rapidly with the rise of smart devices and mobile video streaming. With dozens of wireless applications currently in use and only a finite bandwidth to work with, engineers are challenged to both expand the upward frequency limit of high-performance, high-efficiency wireless systems and to increase the spectral efficiency of the frequency bands already in use. The development of deep sub-um silicon-on-insulator transistor technology and powerful computer-aided circuit designing tools have allowed us to create more affordable silicon-based phased array ICs at frequencies previously achievable by only military applications. The 5th generation of mobile systems (5G) is now expected to use this type of IC to offer increased wireless data capacity in densely-populated areas using mm-wave frequencies. Demand for wireless data is only expected to continue rising, particularly as new IoT applications such as autonomous vehicles become commercially viable.The work presented in this dissertation addresses both the need for expanding the usable frequency spectrum and the need to increase spectral efficiency in available bands. It includes a design for an analog beamforming matrix for a spatially multiplexed phased array receiver in silicon SOI technology, low-power high-linearity w-band amplifiers in InP HBT technology, and ultra-wideband mm-wave power amplifiers in InP HBT technology. Spatially multiplexed phased array transceivers have the potential to greatly increase the spectral efficiency of mm-wave frequency bands by re-using frequency spectrum for many data channels. This type of system can be used to create short-range high-capacity line-of-sight wireless backhaul for crowded city squares or event venues. Mm-wave power amplifiers and high-linearity amplifiers in new 130 nm InP HBT technology represent an IC performance boost which pushes the frequency limits of feasible power-efficient wireless systems. The measured power amplifier ICs produce output power of larger than 16.5 dBm at the 3-dB gain compression condition from 50 GHz to 100 GHz, and a small signal gain of 15 dB over a 90 GHz 3-dB bandwidth. The peak power-added efficiency (PAE) is larger than 8% over that same frequency range. At 90 GHz, the ICs produce 22 dBm of saturated output power and 14.7% PAE. The measured high-linearity amplifier ICs demonstrate an output-referred 3rd order intercept (OIP3) of 22 dBm, a gain of 6.4 dB, and a noise figure below 7 dB at 100 GHz. New designs for an analog MIMO beamforming matrix IC, a 100-165 GHz power amplifier, and an improved w-band high-linearity amplifier are also outlined in this dissertation