Analysis and Design Considerations for Achieving the Fundamental Limits of Phase Noise in mmWave Oscillators with On-Chip MEMS Resonator

Very small electromechanical coupling coefficient in micro-electromechanical systems (MEMS) or acoustic resonators is quite of a concern for oscillator performance, specially at mmWave frequencies. This small coefficient is the manifestation of the small ratio of motional capacitance to static capacitance in the resonators. This work provides a general solution to overcome the problem of relatively high static capacitance at mmWave frequencies and presents analysis and design techniques for achieving extremely low phase noise and a very high figure-of-merit (FoM) in an on-chip MEMS resonator based mmWave oscillator. The proposed analysis and techniques are validated with design and simulation of a 30 GHz oscillator with MEMS resonator having quality factor of 10,000 in 14 nm GF technology. Post layout simulation results show that it achieves a phase noise of -132 dBc/Hz and FoM of 217 dBc/Hz at offset of 1 MHz.Comment: 5 page, 9 figures, 2 tables, transactio

A mmWave Oscillator Design Utilizing High-Q Active-Mode On-Chip MEMS Resonators for Improved Fundamental Limits of Phase Noise

(RFT) allows very high-Q active mode resonators, promising crystal-less monolithic clock generation for mmWave systems. However, there is a strong need for design of mmWave oscillators that utilize the high-Q of active-mode RFT (AM-RFT) optimally, while handling unique challenges such as resonator's low electromechanical transduction. In this brief, we develop a theory and through design and post-layout simulations in 14 nm Global Foundry process, we show the first active oscillator with AM-RFT at 30 GHz, which improves the fundamental limits of phase noise and figure-of-merit as compared to the oscillators with conventional LC resonators. For AM-RFT with Q factor of 10K, post layout simulation results show that the proposed oscillator exhibits phase noise less than -140 dBc per Hz and figure-of-merit greater than 228 dBc per Hz at 1 MHz offset for 30 GHz center frequency, which are more than 25 dB better than the existing monolithic LC oscillators