IC-Antenna Co-Integration for Efficient and Scalable Millimeter-Wave Antenna Interfaces

Millimeter-wave (mm-wave) technology promises high speed, high system capacity and low latency interconnects with reduced cost. Applications like high data-rate wireless links, next generation automotive sensors and security body scanners highly depend on mm-wave technology innovations. As operating frequency moves to higher mm-wave bands, shrinking antenna dimensions enable co-integration of IC and antenna. Limited transistor output power at mm-wave requires multi-element arrays to satisfy communication and radar link budgets. This dissertation presents a wafer-scale compatible IC-antenna co-integration for efficient and scalable mm-wave antenna interfaces. The proposed IC-antenna co-integration approach is demonstrated through single antenna transmitters, a concurrent dual-polarization receiver front-end and polarization-duplex transmitter/receiver front-end. Chapter 2 discusses the challenge of mm-wave IC-antenna interfaces with prior art including antenna-in-package (AiP) and on-chip antennas. The 60 GHz efficient, scalable and wafer-scale compatible IC-antenna co-integration approach is presented demonstrating wide bandwidth and large efficiency which are comparable to system-level AiP techniques at a lower cost and fabrication complexity. Chapter 3 extends the proposed approach to a concurrent 60 GHz dual-polarization receiver front-end for short-range imaging/communication applications and polarization diversity based MIMO links. Active cancellation between orthogonal polarizations is adopted to achieve ∼ 30 dB cross-polarization leakage cancellation and concurrent dual-pol reception. Chapter 4 presents a 60 GHz simultaneous transmit and receive front-end to achieve efficient polarization-duplex operation based on dual-polarization IC-antenna co-integration. Transmitter leakage is suppressed at receiver input and output by intrinsic antenna isolation and a feed-forward passive canceller. Total average self-interference cancellation >40 dB is achieved for 1.07 GHz RF bandwidth at 60 GHz in the presence of a reflector

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

Millimeter-scale RF Integrated Circuits and Antennas for Energy-efficient Wireless Sensor Nodes

Recently there has been increased demand for a millimeter-scale wireless sensor node for applications such as biomedical devices, defense, and surveillance. This form-factor is driven by a desire to be vanishingly small, injectable through a needle, or implantable through a minimally-invasive surgical procedure. Wireless communication is a necessity, but there are several challenges at the millimeter-scale wireless sensor node. One of the main challenges is external components like crystal reference and antenna become the bottleneck of realizing the mm-scale wireless sensor node device. A second challenge is power consumption of the electronics. At mm-scale, the micro-battery has limited capacity and small peak current. Moreover, the RF front-end circuits that operates at the highest frequency in the system will consume most of the power from the battery. Finally, as node volume reduces, there is a challenge of integrating the entire system together, in particular for the RF performance, because all components, including the battery and ICs, need to be placed in close proximity of the antenna. This research explores ways to implement low-power integrated circuits in an energy-constrained and volume constrained application. Three different prototypes are mainly conducted in the proposal. The first is a fully-encapsulated, autonomous, complete wireless sensor node with UWB transmitter in 10.6mm3 volume. It is the first time to demonstrate a full and stand-alone wireless sensing functionality with such a tiny integrated system. The second prototype is a low power GPS front-end receiver that supports burst-mode. A double super-heterodyne topology enables the reception of the three public GPS bands, L1, L2 and L5 simultaneously. The third prototype is an integrated rectangular slot loop antenna in a standard 0.13-μm BiCMOS technology. The antenna is efficiently designed to cover the bandwidth at 60 GHz band and easily satisfy the metal density rules and can be integrated with other circuitry in a standard process.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/143972/1/hskims_1.pd

III-V Nanowire MOSFET High-Frequency Technology Platform

This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. The layout providesan option to scale device dimensions for the purpose of designing varioushigh-frequency circuits. The nanowire MOSFET device is described using1D transport theory, and modeled with a compact virtual source model.Device assessment is performed at high frequencies, where sidewall spaceroverlaps have been identified and mitigated in subsequent design iterations.In the final stage of the design, the device is simulated with fT > 500 GHz,and fmax > 700 GHz.Alongside the III-V vertical nanowire device technology platform, adedicated and adopted RF and mm-wave back-end-of-line (BEOL) hasbeen developed. Investigation into the transmission line parameters revealsa line attenuation of 0.5 dB/mm at 50 GHz, corresponding to state-ofthe-art values in many mm-wave integrated circuit technologies. Severalkey passive components have been characterized and modeled. The deviceinterface module - an interconnect via stack, is one of the prominentcomponents. Additionally, the approach is used to integrate ferroelectricMOS capacitors, in a unique setting where their ferroelectric behavior iscaptured at RF and mm-wave frequencies.Finally, circuits have been designed. A proof-of-concept circuit, designedand fabricated with III-V lateral nanowire MOSFETs and mm-wave BEOL, validates the accuracy of the BEOL models, and the circuit design. Thedevice scaling is shown to be reflected into circuit performance, in aunique device characterization through an amplifier noise-matched inputstage. Furthermore, vertical-nanowire-MOSFET-based circuits have beendesigned with passive feedback components that resonate with the devicegate-drain capacitance. The concept enables for device unilateralizationand gain boosting. The designed low-noise amplifiers have matching pointsindependent on the MOSFET gate length, based on capacitance balancebetween the intrinsic and extrinsic capacitance contributions, in a verticalgeometry. The proposed technology platform offers flexibility in device andcircuit design and provides novel III-V vertical nanowire MOSFET devicesand circuits as a viable option to future wireless communication systems

Ultra-thin silicon technology for tactile sensors

In order to meet the requirements of high performance flexible electronics in fast growing portable consumer electronics, robotics and new fields such as Internet of Things (IoT), new techniques such as electronics based on nanostructures, molecular electronics and quantum electronics have emerged recently. The importance given to the silicon chips with thickness below 50 μm is particularly interesting as this will advance the 3D IC technology as well as open new directions for high-performance flexible electronics. This doctoral thesis focusses on the development of silicon–based ultra-thin chip (UTC) for the next generation flexible electronics. UTCs, on one hand can provide processing speed at par with state-of-the-art CMOS technology, and on the other provide the mechanical flexibility to allow smooth integration on flexible substrates. These development form the motivation behind the work presented in this thesis. As the thickness of any silicon piece decreases, the flexural rigidity decreases. The flexural rigidity is defined as the force couple required to bend a non-rigid structure to a unit curvature, and therefore the flexibility increases. The new approach presented in this thesis for achieving thin silicon exploits existing and well-established silicon infrastructure, process, and design modules. The thin chips of thicknesses ranging between 15 μm – 30 μm, were obtained from processed bulk wafer using anisotropic chemical etching. The thesis also presents thin wafer transfer using two-step transfer printing approach, packaging by lamination or encapsulation between two flexible layerand methods to get the electrical connections out of the chip. The devices realised on the wafer as part of front-end processing, consisted capacitors and transistors, have been tested to analyse the effect of bending on the electrical characteristics. The capacitance of metal-oxide-semiconductor (MOS) capacitors increases by ~5% during bending and similar shift is observed in flatband and threshold voltages. Similarly, the carrier mobility in the channel region of metal-oxide-semiconductor field effect transistor (MOSFET) increases by 9% in tensile bending and decreases by ~5% in compressive bending. The analytical model developed to capture the effect of banding on device performance showed close matching with the experimental results. In order to employ these devices as tactile sensors, two types of piezoelectric materials are investigated, and used in extended gate configuration with the MOSFET. Firstly, a nanocomposite of Poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE) and barium titanate (BT) was developed. The composite, due to opposite piezo and pyroelectric coefficients of constituents, was able to suppress the sensitivity towards temperature when force and temperature varied together, The sensitivity to force in extended gate configuration was measured to be 630 mV/N, and sensitivity to temperature was 6.57 mV/oC, when it was varied during force application. The process optimisation for sputtering piezoelectric Aluminium Nitride (AlN) was also carried out with many parametric variation. AlN does not require poling to exhibit piezoelectricity and therefore offers an attractive alternative for the piezoelectric layer used in devices such as POSFET (where piezoelectric material is directly deposited over the gate area of MOSFET). The optimised process gave highly orientated columnar structure AlN with piezoelectric coefficient of 5.9 pC/N and when connected in extended gate configuration, a sensitivity (normalised change in drain current per unit force) of 2.65 N-1 was obtained

Ultra-thin and flexible CMOS technology: ISFET-based microsystem for biomedical applications

A new paradigm of silicon technology is the ultra-thin chip (UTC) technology and the emerging applications. Very thin integrated circuits (ICs) with through-silicon vias (TSVs) will allow the stacking and interconnection of multiple dies in a compact format allowing a migration towards three-dimensional ICs (3D-ICs). Also, extremely thin and therefore mechanically bendable silicon chips in conjunction with the emerging thin-film and organic semiconductor technologies will enhance the performance and functionality of large-area flexible electronic systems. However, UTC technology requires special attention related to the circuit design, fabrication, dicing and handling of ultra-thin chips as they have different physical properties compared to their bulky counterparts. Also, transistors and other active devices on UTCs experiencing variable bending stresses will suffer from the piezoresistive effect of silicon substrate which results in a shift of their operating point and therefore, an additional aspect should be considered during circuit design. This thesis tries to address some of these challenges related to UTC technology by focusing initially on modelling of transistors on mechanically bendable Si-UTCs. The developed behavioural models are a combination of mathematical equations and extracted parameters from BSIM4 and BSIM6 modified by a set of equations describing the bending-induced stresses on silicon. The transistor models are written in Verilog-A and compiled in Cadence Virtuoso environment where they were simulated at different bending conditions. To complement this, the verification of these models through experimental results is also presented. Two chips were designed using a 180 nm CMOS technology. The first chip includes nMOS and pMOS transistors with fixed channel width and two different channel lengths and two different channel orientations (0° and 90°) with respect to the wafer crystal orientation. The second chip includes inverter logic gates with different transistor sizes and orientations, as in the previous chip. Both chips were thinned down to ∼20m using dicing-before-grinding (DBG) prior to electrical characterisation at different bending conditions. Furthermore, this thesis presents the first reported fully integrated CMOS-based ISFET microsystem on UTC technology. The design of the integrated CMOS-based ISFET chip with 512 integrated on-chip ISFET sensors along with their read-out and digitisation scheme is presented. The integrated circuits (ICs) are thinned down to ∼30m and the bulky, as well as thinned ICs, are electrically and electrochemically characterised. Also, the thesis presents the first reported mechanically bendable CMOS-based ISFET device demonstrating that mechanical deformation of the die can result in drift compensation through the exploitation of the piezoresistive nature of silicon. Finally, this thesis presents the studies towards the development of on-chip reference electrodes and biodegradable and ultra-thin biosensors for the detection of neurotransmitters such as dopamine and serotonin

1-D broadside-radiating leaky-wave antenna based on a numerically synthesized impedance surface

A newly-developed deterministic numerical technique for the automated design of metasurface antennas is applied here for the first time to the design of a 1-D printed Leaky-Wave Antenna (LWA) for broadside radiation. The surface impedance synthesis process does not require any a priori knowledge on the impedance pattern, and starts from a mask constraint on the desired far-field and practical bounds on the unit cell impedance values. The designed reactance surface for broadside radiation exhibits a non conventional patterning; this highlights the merit of using an automated design process for a design well known to be challenging for analytical methods. The antenna is physically implemented with an array of metal strips with varying gap widths and simulation results show very good agreement with the predicted performance

Beam scanning by liquid-crystal biasing in a modified SIW structure

A fixed-frequency beam-scanning 1D antenna based on Liquid Crystals (LCs) is designed for application in 2D scanning with lateral alignment. The 2D array environment imposes full decoupling of adjacent 1D antennas, which often conflicts with the LC requirement of DC biasing: the proposed design accommodates both. The LC medium is placed inside a Substrate Integrated Waveguide (SIW) modified to work as a Groove Gap Waveguide, with radiating slots etched on the upper broad wall, that radiates as a Leaky-Wave Antenna (LWA). This allows effective application of the DC bias voltage needed for tuning the LCs. At the same time, the RF field remains laterally confined, enabling the possibility to lay several antennas in parallel and achieve 2D beam scanning. The design is validated by simulation employing the actual properties of a commercial LC medium

Architecting a One-to-many Traffic-Aware and Secure Millimeter-Wave Wireless Network-in-Package Interconnect for Multichip Systems

With the aggressive scaling of device geometries, the yield of complex Multi Core Single Chip(MCSC) systems with many cores will decrease due to the higher probability of manufacturing defects especially, in dies with a large area. Disintegration of large System-on-Chips(SoCs) into smaller chips called chiplets has shown to improve the yield and cost of complex systems. Therefore, platform-based computing modules such as embedded systems and micro-servers have already adopted Multi Core Multi Chip (MCMC) architectures overMCSC architectures. Due to the scaling of memory intensive parallel applications in such systems, data is more likely to be shared among various cores residing in different chips resulting in a significant increase in chip-to-chip traffic, especially one-to-many traffic. This one-to-many traffic is originated mainly to maintain cache-coherence between many cores residing in multiple chips. Besides, one-to-many traffics are also exploited by many parallel programming models, system-level synchronization mechanisms, and control signals. How-ever, state-of-the-art Network-on-Chip (NoC)-based wired interconnection architectures do not provide enough support as they handle such one-to-many traffic as multiple unicast trafficusing a multi-hop MCMC communication fabric. As a result, even a small portion of such one-to-many traffic can significantly reduce system performance as traditional NoC-basedinterconnect cannot mask the high latency and energy consumption caused by chip-to-chipwired I/Os. Moreover, with the increase in memory intensive applications and scaling of MCMC systems, traditional NoC-based wired interconnects fail to provide a scalable inter-connection solution required to support the increased cache-coherence and synchronization generated one-to-many traffic in future MCMC-based High-Performance Computing (HPC) nodes. Therefore, these computation and memory intensive MCMC systems need an energy-efficient, low latency, and scalable one-to-many (broadcast/multicast) traffic-aware interconnection infrastructure to ensure high-performance. Research in recent years has shown that Wireless Network-in-Package (WiNiP) architectures with CMOS compatible Millimeter-Wave (mm-wave) transceivers can provide a scalable, low latency, and energy-efficient interconnect solution for on and off-chip communication. In this dissertation, a one-to-many traffic-aware WiNiP interconnection architecture with a starvation-free hybrid Medium Access Control (MAC), an asymmetric topology, and a novel flow control has been proposed. The different components of the proposed architecture are individually one-to-many traffic-aware and as a system, they collaborate with each other to provide required support for one-to-many traffic communication in a MCMC environment. It has been shown that such interconnection architecture can reduce energy consumption and average packet latency by 46.96% and 47.08% respectively for MCMC systems. Despite providing performance enhancements, wireless channel, being an unguided medium, is vulnerable to various security attacks such as jamming induced Denial-of-Service (DoS), eavesdropping, and spoofing. Further, to minimize the time-to-market and design costs, modern SoCs often use Third Party IPs (3PIPs) from untrusted organizations. An adversary either at the foundry or at the 3PIP design house can introduce a malicious circuitry, to jeopardize an SoC. Such malicious circuitry is known as a Hardware Trojan (HT). An HTplanted in the WiNiP from a vulnerable design or manufacturing process can compromise a Wireless Interface (WI) to enable illegitimate transmission through the infected WI resulting in a potential DoS attack for other WIs in the MCMC system. Moreover, HTs can be used for various other malicious purposes, including battery exhaustion, functionality subversion, and information leakage. This information when leaked to a malicious external attackercan reveals important information regarding the application suites running on the system, thereby compromising the user profile. To address persistent jamming-based DoS attack in WiNiP, in this dissertation, a secure WiNiP interconnection architecture for MCMC systems has been proposed that re-uses the one-to-many traffic-aware MAC and existing Design for Testability (DFT) hardware along with Machine Learning (ML) approach. Furthermore, a novel Simulated Annealing (SA)-based routing obfuscation mechanism was also proposed toprotect against an HT-assisted novel traffic analysis attack. Simulation results show that,the ML classifiers can achieve an accuracy of 99.87% for DoS attack detection while SA-basedrouting obfuscation could reduce application detection accuracy to only 15% for HT-assistedtraffic analysis attack and hence, secure the WiNiP fabric from age-old and emerging attacks