Luminescent behavior of the K2SiF6:Mn4+ red phosphor at high fluxes and at the microscopic level

Phosphor-converted white light-emitting diodes (LEDs) are becoming increasingly popular for general lighting. The non-rare-earth phosphorK(2)SiF(6): Mn4+, showing promising saturated red d-d-line emission, was investigated. To evaluate the application potential of this phosphor, the luminescence behavior was studied at high excitation intensities and on the microscopic level. The emission shows a sublinear behavior at excitation powers exceeding 40 W/cm(2), caused by ground-state depletion due to the ms range luminescence lifetime. The thermal properties of the luminescence in K2SiF6: Mn4+ were investigated up to 450 K, with thermal quenching only setting in above 400 K. The luminescence lifetime decreases with increasing temperature, even before thermal quenching sets in, which is favorable to counteract the sublinear response at high excitation intensity. A second, faster, decay component emerges above 295 K, which, according to crystal field calculations, is related to a fraction of the Mn4+ ions incorporated on tetragonally deformed lattice sites. A combined investigation of structural and luminescence properties in a scanning electron microscope using energy-dispersive X-ray spectroscopy and cathodoluminescence mappings showed both phosphor degradation at high fluxes and a preferential location of the light outcoupling at irregularities in the crystal facets. The use of K2SiF6: Mn4+ in a remote phosphor configuration is discussed

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

A size-dependent strain relaxation and its effects on the optical properties of InGaN/GaN multiple quantum wells (QWs) in micro-pillars have been investigated through a combination of high spatial resolution cathodoluminescence (CL) hyperspectral imaging and numerical modeling. The pillars have diameters (d) ranging from 2 to 150 μm and were fabricated from a III-nitride light-emitting diode (LED) structure optimized for yellow-green emission at ∼560 nm. The CL mapping enables us to investigate strain relaxation in these pillars on a sub-micron scale and to confirm for the first time that a narrow (≤2 μm) edge blue-shift occurs even for the large InGaN/GaN pillars (d > 10 μm). The observed maximum blue-shift at the pillar edge exceeds 7 nm with respect to the pillar centre for the pillars with diameters in the 2–16 μm range. For the smallest pillar (d = 2 μm), the total blue-shift at the edge is 17.5 nm including an 8.2 nm “global” blue-shift at the pillar centre in comparison with the unetched wafer. By using a finite element method with a boundary condition taking account of a strained GaN buffer layer which was neglected in previous simulation works, the strain distribution in the QWs of these pillars was simulated as a function of pillar diameter. The blue-shift in the QWs emission wavelength was then calculated from the strain-dependent changes in piezoelectric field, and the consequent modification of transition energy in the QWs. The simulation and experimental results agree well, confirming the necessity for considering the strained buffer layer in the strain simulation. These results provide not only significant insights into the mechanism of strain relaxation in these micro-pillars but also practical guidance for design of micro/nano LEDs

Stationary and adaptive color-shift reduction methods based on the bilevel driving technique for phosphor-converted white LEDs

The bilevel driving technique has realized a 2-D control of the luminosity and emitted color of white LEDs with duty cycle and forward current levels. Unfortunately, various combinations of these dimming control parameters can lead to significant changes in junction temperature, which further modify the luminosity and emitted color of LEDs. In this paper, the theoretical aspects of these complex interactions and the impact of bilevel drive on the color-shift properties of white LEDs are discussed in detail by using a mathematical color-shift model. Two color-shift reduction methods are proposed based on the insights obtained from this model. This study shows that a heat sinks thermal resistance that minimizes the overall color shift over dimming can be uniquely determined from the knowledge of some measurable LED parameters, and gives rise to a global minimum color shift. If such a thermal resistance cannot be realized due to practical limitations, the second method that utilizes an adaptive change of forward current levels over dimming can be adopted. Based on their nature, these methods are classified as stationary and adaptive methods, respectively. Their validity is supported by experimental measurements on a commercial white LED. © 2011 IEEE.published_or_final_versio

Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading

We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical model of internal quantum efficiency calculation is presented that takes into account nonuniform lateral carrier injection in the active region. Based on this model, we examine the effect of current crowding on the efficiency droop using comparison of simulated internal quantum efficiency of InGaN LEDs with low and high uniformity of current spreading. The results of simulations and measurements show that the devices with low uniformity of current spreading exhibit higher efficiency droop and lower roll-off current value

Video analysis of events within chemical sensor networks

This paper describes how we deploy video surveillance techniques to monitor the activities within a sensor network in order to detect environmental events. This approach combines video and sensor networks in a completely different way to what would be considered the norm. Sensor networks consist of a collection of autonomous, self-powered nodes which sample their environment to detect anything from chemical pollutants to atypical sound patterns which they report through an ad hoc network. In order to reduce power consumption nodes have the capacity to communicate with neighbouring nodes only. Typically these communications are via radio waves but in this paper the sensor nodes communicate to a base station through patterns emitted by LEDs and captured by a video camera. The LEDs are chemically coated to react to their environment and on doing so emit light which is then picked up by video analysis. There are several advantages to this approach and to demonstrate we have constructed a controlled test environment. In this paper we introduce and briefly describe this environment and the sensor nodes but focus mainly on the video capture, image processing and data visualisation techniques used to indicate these events to a user monitoring the network

Red-emitting Ba2Si5N8Eu2+ conversion phosphor: A new selection for enhancing the optical performance of the in-cup packaging MCW-LEDs

In this research, the influence of the red-emitting Ba2Si5N8Eu2+ convention phosphor on the optical performance of the 7,000K and 7,700K in-cup packaging multi-chip white LEDs (MCW-LEDs) is investigated. The effect of the red-emitting Ba2Si5N8Eu2+ convention phosphor is demonstrated based on Mie Theory by Mat Lab and Light Tools software. The research results indicated that the optical performance of MCW-LEDs was crucially affected by the red-emitting Ba2Si5N8Eu2+ phosphor's concentration. This paper provides an essential recommendation for selecting and developing the phosphor materials for MW-LEDs manufacturing.Web of Science51art. no. 148615