8 research outputs found

    Fully Integrated Voltage Reference Circuits

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    (Doktora) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2014(PhD) -- İstanbul Technical University, Institute of Science and Technology, 2014Gerilim referans devreleri, elektriksel sistemlerde diğer alt blokların çalışmaları için kararlı bir çalışma noktası üretmeleri sebebiyle veri dönüştürücüler (ADC - DAC), frekans sentezleyiciler, DC-DC ve AC-DC dönüştürücüler ve lineer regülatörler gibi pek çok elektriksel sistemin en temel yapı bloklarındandır. İdeal olarak, üretilen bu referans noktası, sıcaklık, üretim süreçleri, besleme gerilim degişimleri ve yükleme etkileri gibi çalışma koşullarından etkilenmemelidir. Bir referans devresinin doğruluğu bahsedilen çalışma koşullarının etkisiyle mutlak değerinden ne kadar saptığı olarak tanımlanır. Modern haberleşme sistemleri ve tüketici ürünlerindeki gelişmeler ile birlikte yüksek entegrasyon ve doğruluklu sistemlere olan talep artmıştır. Tümdevre sistemlerinde, alt blokların çalışma noktalarını belirlemesi nedeniyle özellikle referans devrelerinin performansları bütün sistemin performansının belirlenmesinde önemli rol oynamaktadır. Dolayısıyla yüksek performanslı sistemlere olan talep, bu performansların elde edilmesi için kullanılan düşük geometrili üretim teknolojilerine uygun, yani giderek azalan besleme gerilimleri ile çalışabilecek yüksek doğruluklu referans devrelerine olan talebi de arttırmıştır. Bu nedenle bu çalışmada gerilim referans devre topolojilerine odaklanılmıştır. Bu doğrultuda, öncelikle yüksek doğruluklu, düşük gürültülü gerilim refereans devre topolojileri üzerinde çalışılarak 0.35 um CMOS teknoljisinde farklı tasarımlar yapılmıştır. Bu aşamada temel hedef, yüksek dogrulukluk olarak belirenmiş ve yapılan tasarımlarda, üretim sonrası ayarlamalardan sonra sıcaklık katsayısı 3 ppm/C olabilecek devreler tasarlanmıştır. Ancak, 0.35 um CMOS üretim teknolojisi kullanılması ve kullanılan topolojiler dolayısıyla, devrelerin çalışabileceği minimum besleme gerilim seviyesi 1.8 V ile sınırlı kalmıştır. Devrelerin çektikleri akımlar ise 20-30 uA seviyesindedir. Bu tasarımlar sırasında (triple-well üretim teknlojileri için), önerilen blok gövde izolasyon stratejisi, tasarımı yapılan devrenin gövdesinin tümdevrenin geri kalan kısmından ters kutuplanmış bir jonksiyon diyodu sayesinde izole edilmesine dayanmaktadır ve devrenin gövde gürültüsünden etkilenmesini önemli ölçüde azaltmaktadır. Son olarak, çoğunlukla osilatör devrelerinde uygulanan anahtarlamalı kutuplama tekniği uygulanarak devrelerin düşük frekans gürültü performansının iyileştirilmesi amaçlanmıştır. Çalışmanın geri kalan kısmında, düşük besleme gerilimleriyle çalışabilecek mikron-altı üretim teknolojilerine uygun gerilim referans devre topolojileri üzerine odaklanılmıştır. Bu doğrultuda, iki yeni düşük besleme gerilimli ve düşük güç tüketimli gerilim referans devre topolojisi önerilmiştir. Önerilen topolojiler, 0.18 um CMOS üretim teknolojisinde gerçeklenmiştir. Ölçüm sonuçları, tasarlanan gerilim refarans devrelerinin 0.65 V besleme gerilimi ile çalışabildiğini göstermiştir. Önerilen devre topolojileri ile 0-120 C sıcaklık aralığında, sıcaklık katsayısı 50 ppm/C olan 193 mV seviyesinde referans gerilimleri elde edilmiştir. Devrelerin güç tüketimleri sırasıyla 0.3 uW ve 0.4 uW iken kapladıkları alan 0.2 mm^2 ve 0.08 mm^2 dir. Sonuç olarak, önerilen devre topolojileri ile literatürde yer alan diğer 1V-altı referans devreleri ile karşılatrılabilir seviyede sıcaklık katsayısı olan referans gerilimleri çok daha düşük güç harcamasıyla elde edilmiştir.Voltage references are one of the basic building blocks of many SoCs and mixed-signal ICs such as data converters, voltage regulators and operational amplifiers as they constitute a stable reference voltage for other sub-circuits to generate predictable and repeatable results. Ideally, this reference point should not change with external influences or operating conditions such as temperature, fabrication process variations, power supply variations and transient loading effects. Along with the rapid development of modern communication systems and consumer products, which constitutes the main market for semiconductor industry, the market demand for these System on Chip (SoC) or Mixed Signal ICs to have lower power consumption, higher accuracy and lower cost, and thus, higher integration. Since the performance of the whole system depends strongly to the performance of the reference circuit, this work is focused on fully integrated voltage reference architectures. With this motivation, firstly, different kinds of high precision low noise voltage reference circuits are designed in standard 0.35 um CMOS technology that we have more experience and knowledge of. The essential goal of these studies was high precision and temperature coefficient of the designed voltage reference circuits are on the order of 3 ppm/C with trimming after production. However, since 0.35 um CMOS technology is used in these designs and also due to the chosen topologies their minimum supply voltage can be down to 1.8 V and while current consumption is on the order of 20-30 uA. In the design of the this voltage reference block bulk isolation technique is proposed (for triple-well CMOS processes), in which system blocks are bulk isolated by a reverse biased junction diode from the rest of the die to drastically reduce substrate noise coupling. This is especially important if a very low power voltage reference is designed in a very noisy SoC. Moreover, the switched biasing technique, which is mostly applied to the oscillators, is also implemented to the designed BGR in order to improve the low noise performance of the circuit. The rest of the thesis is focused on new voltage reference topologies that are appropriate for sub-micron technologies operating with low supply voltages. With this motivation two new low voltage and low power voltage reference topologies are proposed. The proposed voltage reference topologies are implemented and fabricated in 0.18 um CMOS technology. Measurement results show that the proposed voltage reference circuits are working properly down to 0.65 V and achieve an output voltage of 193 mV with a temperature coefficient on the order of 50 ppm/C in the temperature range of 0-120C. The total power consumption of the two designed voltage references are 0.3 uW and 0.4 uW at 27 C, while occupying the area of 0.2 mm^2 and 0.08 mm^2, respectively. As a result, the proposed voltage reference topologies generate a reference voltage with comparable level of temperature coefficient and quite low power consumption with respect to the other sub-1V voltage reference circuits reported in the literature.DoktoraPh

    Analogue VLSI for temporal frequency analysis of visual data

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    Resource-Constrained Acquisition Circuits for Next Generation Neural Interfaces

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    The development of neural interfaces allowing the acquisition of signals from the cortex of the brain has seen an increasing amount of interest both in academic research as well as in the commercial space due to their ability to aid people with various medical conditions, such as spinal cord injuries, as well as their potential to allow more seamless interactions between people and machines. While it has already been demonstrated that neural implants can allow tetraplegic patients to control robotic arms, thus to an extent returning some motoric function, the current state of the art often involves the use of heavy table-top instruments connected by wires passing through the patient’s skull, thus making the applications impractical and chronically infeasible. Those limitations are leading to the development of the next generation of neural interfaces that will overcome those issues by being minimal in size and completely wireless, thus paving a way to the possibility of their chronic application. Their development however faces several challenges in numerous aspects of engineering due to constraints presented by their minimal size, amount of power available as well as the materials that can be utilised. The aim of this work is to explore some of those challenges and investigate novel circuit techniques that would allow the implementation of acquisition analogue front-ends under the presented constraints. This is facilitated by first giving an overview of the problematic of recording electrodes and their electrical characterisation in terms of their impedance profile and added noise that can be used to guide the design of analogue front-ends. Continuous time (CT) acquisition is then investigated as a promising signal digitisation technique alternative to more conventional methods in terms of its suitability. This is complemented by a description of practical implementations of a CT analogue-to-digital converter (ADC) including a novel technique of clockless stochastic chopping aimed at the suppression of flicker noise that commonly affects the acquisition of low-frequency signals. A compact design is presented, implementing a 450 nW, 5.5 bit ENOB CT ADC, occupying an area of 0.0288 mm2 in a 0.18 μm CMOS technology, making this the smallest presented design in literature to the best of our knowledge. As completely wireless neural implants rely on power delivered through wireless links, their supply voltage is often subject to large high frequency variations as well voltage uncertainty making it necessary to design reference circuits and voltage regulators providing stable reference voltage and supply in the constrained space afforded to them. This results in numerous challenges that are explored and a design of a practical implementation of a reference circuit and voltage regulator is presented. Two designs in a 0.35 μm CMOS technology are presented, showing respectively a measured PSRR of ≈60 dB and ≈53 dB at DC and a worst-case PSRR of ≈42 dB and ≈33 dB with a less than 1% standard deviation in the output reference voltage of 1.2 V while consuming a power of ≈7 μW. Finally, ΣΔ modulators are investigated for their suitability in neural signal acquisition chains, their properties explained and a practical implementation of a ΣΔ DC-coupled neural acquisition circuit presented. This implements a 10-kHz, 40 dB SNDR ΣΔ analogue front-end implemented in a 0.18 μm CMOS technology occupying a compact area of 0.044 μm2 per channel while consuming 31.1 μW per channel.Open Acces

    CMOS Hyperbolic Sine ELIN filters for low/audio frequency biomedical applications

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    Hyperbolic-Sine (Sinh) filters form a subclass of Externally-Linear-Internally-Non- Linear (ELIN) systems. They can handle large-signals in a low power environment under half the capacitor area required by the more popular ELIN Log-domain filters. Their inherent class-AB nature stems from the odd property of the sinh function at the heart of their companding operation. Despite this early realisation, the Sinh filtering paradigm has not attracted the interest it deserves to date probably due to its mathematical and circuit-level complexity. This Thesis presents an overview of the CMOS weak inversion Sinh filtering paradigm and explains how biomedical systems of low- to audio-frequency range could benefit from it. Its dual scope is to: consolidate the theory behind the synthesis and design of high order Sinh continuous–time filters and more importantly to confirm their micro-power consumption and 100+ dB of DR through measured results presented for the first time. Novel high order Sinh topologies are designed by means of a systematic mathematical framework introduced. They employ a recently proposed CMOS Sinh integrator comprising only p-type devices in its translinear loops. The performance of the high order topologies is evaluated both solely and in comparison with their Log domain counterparts. A 5th order Sinh Chebyshev low pass filter is compared head-to-head with a corresponding and also novel Log domain class-AB topology, confirming that Sinh filters constitute a solution of equally high DR (100+ dB) with half the capacitor area at the expense of higher complexity and power consumption. The theoretical findings are validated by means of measured results from an 8th order notch filter for 50/60Hz noise fabricated in a 0.35μm CMOS technology. Measured results confirm a DR of 102dB, a moderate SNR of ~60dB and 74μW power consumption from 2V power supply

    Solid State Circuits Technologies

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    The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

    Biomedical Engineering

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    Biomedical engineering is currently relatively wide scientific area which has been constantly bringing innovations with an objective to support and improve all areas of medicine such as therapy, diagnostics and rehabilitation. It holds a strong position also in natural and biological sciences. In the terms of application, biomedical engineering is present at almost all technical universities where some of them are targeted for the research and development in this area. The presented book brings chosen outputs and results of research and development tasks, often supported by important world or European framework programs or grant agencies. The knowledge and findings from the area of biomaterials, bioelectronics, bioinformatics, biomedical devices and tools or computer support in the processes of diagnostics and therapy are defined in a way that they bring both basic information to a reader and also specific outputs with a possible further use in research and development

    Digital ADCs and ultra-wideband RF circuits for energy constrained wireless applications by Denis Clarke Daly.

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 173-183).Ongoing advances in semiconductor technology have enabled a multitude of portable, low power devices like cellular phones and wireless sensors. Most recently, as transistor device geometries reach the nanometer scale, transistor characteristics have changed so dramatically that many traditional circuits and architectures are no longer optimal and/or feasible. As a solution, much research has focused on developing 'highly digital' circuits and architectures that are tolerant of the increased leakage, variation and degraded voltage headrooms associated with advanced CMOS processes. This thesis presents several highly digital, mixed-signal circuits and architectures designed for energy constrained wireless applications. First, as a case study, a highly digital, voltage scalable flash ADC is presented. The flash ADC, implemented in 0.18 [mu]m CMOS, leverages redundancy and calibration to achieve robust operation at supply voltages from 0.2 V to 0.9 V. Next, the thesis expands in scope to describe a pulsed, noncoherent ultra-wideband transceiver chipset, implemented in 90 nm CMOS and operating in the 3-to-5 GHz band. The all-digital transmitter employs capacitive combining and pulse shaping in the power amplifier to meet the FCC spectral mask without any off-chip filters. The noncoherent receiver system-on-chip achieves both energy efficiency and high performance by employing simple amplifier and ADC structures combined with extensive digital calibration. Finally, the transceiver chipset is integrated in a complete system for wireless insect flight control.(cont.) Through the use of a flexible PCB and 3D die stacking, the total weight of the electronics is kept to 1 g, within the carrying capacity of an adult Manduca sexta moth. Preliminary wireless flight control of a moth in a wind tunnel is demonstrated.Ph.D

    Biomimetic Based Applications

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    The interaction between cells, tissues and biomaterial surfaces are the highlights of the book "Biomimetic Based Applications". In this regard the effect of nanostructures and nanotopographies and their effect on the development of a new generation of biomaterials including advanced multifunctional scaffolds for tissue engineering are discussed. The 2 volumes contain articles that cover a wide spectrum of subject matter such as different aspects of the development of scaffolds and coatings with enhanced performance and bioactivity, including investigations of material surface-cell interactions
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