Electronic structure of In1−x_{1-x}Mnx_xAs studied by photoemission spectroscopy: Comparison with Ga1−x_{1-x}Mnx_xAs

We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.Comment: 4 pages, 3 figure

Characterizing Jordan derivations of matrix rings through zero products

Let \Mn be the ring of all $n \times n$ matrices over a unital ring $\mathcal{R}$, let $\mathcal{M}$ be a 2-torsion free unital \Mn-bimodule and let D:\Mn\rightarrow \mathcal{M} be an additive map. We prove that if D(\A)\B+ \A D(\B)+D(\B)\A+ \B D(\A)=0 whenever \A,\B\in \Mn are such that \A\B=\B\A=0, then D(\A)=\delta(\A)+\A D(\textbf{1}), where \delta:\Mn\rightarrow \mathcal{M} is a derivation and $D(\textbf{1})$ lies in the centre of $\mathcal{M}$. It is also shown that $D$ is a generalized derivation if and only if D(\A)\B+ \A D(\B)+D(\B)\A+ \B D(\A)-\A D(\textbf{1})\B-\B D(\textbf{1})\A=0 whenever \A\B=\B\A=0. We apply this results to provide that any (generalized) Jordan derivation from \Mn into a 2-torsion free \Mn-bimodule (not necessarily unital) is a (generalized) derivation. Also, we show that if \varphi:\Mn\rightarrow \Mn is an additive map satisfying \varphi(\A \B+\B \A)=\A\varphi(\B)+\varphi(\B)\A \quad (\A,\B \in \Mn), then \varphi(\A)=\A\varphi(\textbf{1}) for all \A\in \Mn, where $\varphi(\textbf{1})$ lies in the centre of \Mn. By applying this result we obtain that every Jordan derivation of the trivial extension of \Mn by \Mn is a derivation.Comment: To appear in Mathematica Slovac

Density-functional theory study of half-metallic heterostructures: interstitial Mn in Si

Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $\delta$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$ concentrations of 1/2 or 1 layer, the states induced in the band gap of $\delta$-doped heterostructures still display high spin polarization, about 85% and 60%, respectively. The proposed heterostructures are more stable than previously assumed $\delta$-layers of {\em substitutional} Mn. Contrary to wide-spread belief, the present study demonstrates that {\em interstitial} Mn can be utilized to tune the magnetic properties of Si, and thus provides a new clue for Si-based spintronics materials.Comment: 5 pages, 4 figures, PRL accepte

Magnetic properties and electronic structure of Mn-Ni-Ga magnetic shape memory alloys

Influence of disorder, antisite defects, martensite transition and compositional variation on the magnetic properties and electronic structure of Mn$_2$NiGa and Mn$_{1+x}$Ni$_{2-x}$Ga magnetic shape memory alloys have been studied by using full potential spin-polarized scalar relativistic Korringa-Kohn-Rostocker (FP-SPRKKR) method. Mn$_2$NiGa is ferrimagnetic and its total spin moment increases when disorder in the occupancy of Mn$_{\rm Ni}$ (Mn atom in Ni position) is considered. The moment further increases when Mn-Ga antisite defect[1] is included in the calculation. A reasonable estimate of $T_C$ for Mn$_2$NiGa is obtained from the exchange parameters for the disordered structure. Disorder influences the electronic structure of Mn$_2$NiGa through overall broadening of the density of states and a decrease in the exchange splitting. Inclusion of antisite defects marginally broaden the minority spin partial DOS (PDOS), while the majority spin PDOS is hardly affected. For Mn$_{1+x}$Ni$_{2-x}$Ga where 1$\geq$$x$$\geq$0, as $x$ decreases, Mn$_{\rm Mn}$ moment increases while Mn$_{\rm Ni}$ moment decreases in both austenite and martensite phases. For $x$$\geq$ 0.25, the total moment of the martensite phase is smaller compared to the austenite phase, which indicates possible occurrence of inverse magnetocaloric effect. We find that the redistribution of Ni 3$d$- Mn$_{\rm Ni}$ 3$d$ minority spin electron states close to the Fermi level is primarily responsible for the stability of the martensite phase in Mn-Ni-Ga.Comment: 10 pages, 5 figure

Magnetic interactions in the Martensitic phase of Mn rich Ni-Mn-In shape memory alloys

The magnetic properties of Mn$_{2}$Ni$_{(1+x)}$In$_{(1-x)}$ ($x$ = 0.5, 0.6, 0.7) and Mn$_{(2-y)}$Ni$_{(1.6+y)}$In$_{0.4}$ ($y$ = -0.08, -0.04, 0.04, 0.08) shape memory alloys have been studied. Magnetic interactions in the martensitic phase of these alloys are found to be quite similar to those in Ni$_2$Mn$_{(1+x)}$In$_{(1-x)}$ type alloys. Doping of Ni for In not only induces martensitic instability in Mn$_2$NiIn type alloys but also affects magnetic properties due to a site occupancy disorder. Excess Ni preferentially occupies X sites forcing Mn to the Z sites of X$_2$YZ Heusler composition resulting in a transition from ferromagnetic ground state to a state dominated by ferromagnetic Mn(Y) - Mn(Y) and antiferromagnetic Mn(Y)-Mn(Z) interactions. These changes in magnetic ground state manifest themselves in observation of exchange bias effect even in zero field cooled condition and virgin magnetization curve lying outside the hysteresis loop.Comment: Accepted in J. Appl. Phy

Koordinationschemie Perhalogenierter Cyclopentadine und Alkine, XV

Coordination Chemistry of Perhalogenated Cyclopentadienes and Alkynes, XV[1]. - Systematic Generation of Fivefold Ring-Silylated Cyclopentadienyl Manganese Complexes from [C5Br5]Mn(CO)3. Molecular Structure of [C5Br3(SiMe3)2]Mn(CO)3 [C5Br5]Mn(CO)3 reacts in a sequence of alternate bromine-lithium exchange reactions and electrophilic silylations by SiMe3Cl or SiMe3OSO2CF3 to give [C5Br5-n(SiMe3)n]Mn(CO)3, where n = 1 (1), 2 (2), or 3 (3). A crystal structure determination of 2 shows the two silyl substituents in the relative 1,3-orientation. Addition of one or two equivalents of BuLi and SiMe2HCl to a solution of 3 yields [C5Br2-n(SiMe3)3-(SiMe2H)n]Mn(CO)3 with n = 1 (4) and 2 (5), respectively. If 1 is treated twice with 2 eq. of BuLi and then 2 eq. of SiMe2HCl, a further pentasilylated compound, [C5(SiMe3)(SiMe2H)4]-Mn(CO)3 (6), is obtained. In situ chlorination of [C5(SiMe2H)5]Mn(CO)3 or 6 with PdCl2, followed by addition of MeMgCl, yields after chromatography an inseparable mixture of [C5(SiMe3)4X]Mn(CO)3 compounds, where X = H (7a), SiMe2H (7b), and SiMe3 (7c)