Codes for Asymmetric Limited-Magnitude Errors With Application to Multilevel Flash Memories

Several physical effects that limit the reliability and performance of multilevel flash memories induce errors that have low magnitudes and are dominantly asymmetric. This paper studies block codes for asymmetric limited-magnitude errors over q-ary channels. We propose code constructions and bounds for such channels when the number of errors is bounded by t and the error magnitudes are bounded by ℓ. The constructions utilize known codes for symmetric errors, over small alphabets, to protect large-alphabet symbols from asymmetric limited-magnitude errors. The encoding and decoding of these codes are performed over the small alphabet whose size depends only on the maximum error magnitude and is independent of the alphabet size of the outer code. Moreover, the size of the codes is shown to exceed the sizes of known codes (for related error models), and asymptotic rate-optimality results are proved. Extensions of the construction are proposed to accommodate variations on the error model and to include systematic codes as a benefit to practical implementation

Systematic Error-Correcting Codes for Rank Modulation

The rank-modulation scheme has been recently proposed for efficiently storing data in nonvolatile memories. Error-correcting codes are essential for rank modulation, however, existing results have been limited. In this work we explore a new approach, \emph{systematic error-correcting codes for rank modulation}. Systematic codes have the benefits of enabling efficient information retrieval and potentially supporting more efficient encoding and decoding procedures. We study systematic codes for rank modulation under Kendall's $\tau$-metric as well as under the $\ell_\infty$-metric. In Kendall's $\tau$-metric we present $[k+2,k,3]$-systematic codes for correcting one error, which have optimal rates, unless systematic perfect codes exist. We also study the design of multi-error-correcting codes, and provide two explicit constructions, one resulting in $[n+1,k+1,2t+2]$ systematic codes with redundancy at most $2t+1$. We use non-constructive arguments to show the existence of $[n,k,n-k]$-systematic codes for general parameters. Furthermore, we prove that for rank modulation, systematic codes achieve the same capacity as general error-correcting codes. Finally, in the $\ell_\infty$-metric we construct two $[n,k,d]$ systematic multi-error-correcting codes, the first for the case of $d=O(1)$, and the second for $d=\Theta(n)$. In the latter case, the codes have the same asymptotic rate as the best codes currently known in this metric

Systematic Codes for Rank Modulation

The goal of this paper is to construct systematic error-correcting codes for permutations and multi-permutations in the Kendall's $\tau$-metric. These codes are important in new applications such as rank modulation for flash memories. The construction is based on error-correcting codes for multi-permutations and a partition of the set of permutations into error-correcting codes. For a given large enough number of information symbols $k$, and for any integer $t$, we present a construction for ${(k+r,k)}$ systematic $t$-error-correcting codes, for permutations from $S_{k+r}$, with less redundancy symbols than the number of redundancy symbols in the codes of the known constructions. In particular, for a given $t$ and for sufficiently large $k$ we can obtain $r=t+1$. The same construction is also applied to obtain related systematic error-correcting codes for multi-permutations.Comment: to be presented ISIT201

Correcting Charge-Constrained Errors in the Rank-Modulation Scheme

We investigate error-correcting codes for a the rank-modulation scheme with an application to flash memory devices. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, overcomes overshoot errors when programming cells (a serious problem that reduces the writing speed), and mitigates the problem of asymmetric errors. In this paper, we study the properties of error-correcting codes for charge-constrained errors in the rank-modulation scheme. In this error model the number of errors corresponds to the minimal number of adjacent transpositions required to change a given stored permutation to another erroneous one—a distance measure known as Kendall’s τ-distance.We show bounds on the size of such codes, and use metric-embedding techniques to give constructions which translate a wealth of knowledge of codes in the Lee metric to codes over permutations in Kendall’s τ-metric. Specifically, the one-error-correcting codes we construct are at least half the ball-packing upper bound