580 research outputs found

    Growth of single-crystal gallium nitride

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    Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces

    P-n junctions formed in gallium antimonide

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    Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required

    Controlled substrate cooling improves reproducibility of vapor deposited semiconductor composites

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    Improved substrate holder preferentially provides more uniform substrate cooling and increases the proportion of vapor flowing over the substrate during growth. Nitrogen gas is constricted in the substrate holder to cool the substrate

    Vapor Phase Growth Technique and System for Several III-V Compound Semiconductors Interim Scientific Report

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    Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor material

    Vapor phase growth technique and system for several 3-5 compound semiconductors Quarterly technical report

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    Vapor phase growth technique and system for group 3A and 5A compound semiconductor

    Vapor-phase growth technique and system for several III-V compound semiconductors Interim scientific report

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    Vapor phase growth technique for III-V compound semiconductors containing aluminu

    Vapor phase growth technique and system for several III-V compound semiconductors Interim scientific report

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    Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide alloy, and gallium antimonide allo
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