Current balancing of parallel-connected silicon carbide (SiC) MOSFET power devices using peak detection via PCB sensors

Abstract

The parallelling of power semiconductor devices is essential for desired current ratings and the system is prone to the current unbalancing due to parameter variations. SiC devices with significant variable threshold voltage due to manufacturing yield and temperature distribution have a consequential possibility of dynamic current unbalancing. This paper presents the peak detection-based current balancing of parallel-connected SiC devices to minimize the turn-on and turn-off current unbalancing. PCB current sensors are used for the measurement and feedback of the signal for this peak detection-based current balancing mechanism.journal articl