Threshold Voltage for SiC MESFET with a Recoil-implanted Channel Profile.

Abstract

The demand for high-power and high-frequency devices has driven research into Silicon Carbide (SiC) Metal-Semiconductor Field Effect Transistors (MESFETs) due to their superior electrical properties. This study focuses on the threshold voltage characteristics of SiC MESFETs with a recoil-implanted channel profile, leveraging SiC's wide bandgap, high thermal conductivity, and strong breakdown voltage. These properties make SiC ideal for efficient power management and high-temperature applications. The analytical model developed evaluates the impact of recoil implantation on threshold voltage. By controlling the doping concentration through recoil implantation, a uniform doping profile is achieved, minimizing crystal defects and improving channel control and efficiency. Key results from MATLAB simulations show that threshold voltage decreases with increasing ion implant dose and moderated by substrate concentration. This tunability is required for optimizing SiC MESFET performance for specific applications. Additionally, I-V characteristics and transconductance studies of 4H-SiC MESFETs demonstrate effective operational control through variations in gate-to-source and drain-to-source voltages, making them acceptable for microwave and RF amplifier circuits. This research highlights SiC MESFETs as promising candidates for high-performance power devices