research article
oaioai:ojs.umb-intl-journal.com:article/8

PREPARATION AND PHOTOLUMINESCENCE PROPERTIES OF RF-SPUTTERED ZnO FILMS

Authors
Publication date
26 November 2015
Publisher
'Universitas Mercu Buana'
Doi

    Abstract

    ZnO/Si films were prepared by radio frequency (RF) magnetron sputtering at room temperature. By optimizing the heat treatment conditions, we obtained a good quality film annealed at 700 ºC for longer 60 minutes. This process was monitored carefully by Raman scattering spectroscopy, and X-ray diffraction. The photoluminescence study on this film revealed that only ultraviolet emissions due to donor-acceptor pair (DAP), neutral acceptor-bound exciton (AºX) and donor-bound exciton (DºX) were observed. The intensity and peak position of these emissions depend on the measurement temperature and excitation power density

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    International Journal of Innovation in Mechanical Engineering and Advanced Materials (IJIMEAM)

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    Last time updated on 30/10/2019

    This paper was published in International Journal of Innovation in Mechanical Engineering and Advanced Materials (IJIMEAM).

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