Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias

Abstract

National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300]Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-mu m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately circle divide 10-mu m TSVs on a 100-mu m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs