Charged defects-controlled conductivity in Ge-In-Se glasses

Abstract

The variation of the d.c. electrical conductivity, ?, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ?E, and an increase in ? on introduction of indium into Ge-Se glasses. The changes in ?E and ? with composition (selenium content in the glasses) are identical for the Gex In5 Se95-x and Gex In8Se92-x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ?E and ? have been explained by a shift in the Fermi level, being brought by the introduction of indium