AbstractIn this work a new concept for the fabrication of a silicon based micromechanical squeeze-film sensor has been developed. A thin film of a gas is trapped between the resonator structure and its fixed substrate and builds up a squeeze-film arrangement. Characteristic parameters, such as resonance frequency, quality-factor and phase-shift depend on pressure and viscosity of the trapped gas and thus can be used for sensing these gas properties. First samples with different geometries have been fabricated by using a combination of dry and wet etching of the silicon substrate. Measurement results of the squeeze effect of this micro sensor are shown and compared with theoretical simulations
Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.