AbstractPhilips Semiconductors recently announced its new range of “Fifth Generation” RF wideband transistors. The company claims that these silicon transistors meet the objectives of front-end receiver and RF transmitter sections of 3 V mobile phones with a “distinct price/performance ratio advantage over competing devices such as GaAs MESFETs”. Not only do these devices achieve impressive performance, Philips is putting them into mass-production. Philips has developed a double-polysilicon process using LPCVD and has spent an extra $15 million equipping its fab in Nijmegen including new silicon epilayer equipment
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