Comparison between technologies for APDs fabrication in particle detectors

Abstract

AbstractThis work presents a comparison between high voltage 0.35 μm and high integration 0.13 μm commercially available CMOS technologies to fabricate an APD array for tracking high energy particles. Size, speed and noise are fixed for the particular collider. The characterization of both technologies shows that neither of them satisfies all the imposed constrains. The high voltage technology has a low dark count rate related to the low trap concentration but the sensor is too slow. The high integration technology generates fast sensors with high dark count rates. It is concluded that in order to decrease the amount of data to save and hence memory it would be recommended the use of the 0.35 μm-HV technology in front of the 0.13 μm technology