Analysis of Recombination Processes in 0.5 - 0.6eV Epitaxial GaInAsSb Lattice-Matched to GaSb

Donetsky, D.; Anikeev, S.; Ning, G.; Belenky, G.; Luryi, S.; Wang, C. A.; Shiau, D. A.; Dashiell, M.; Beausang, J.; Nichols, G.

report

Analysis of Recombination Processes in 0.5 - 0.6eV Epitaxial GaInAsSb Lattice-Matched to GaSb

Authors: D. Donetsky
S. Anikeev
G. Ning
G. Belenky
S. Luryi
C. A. Wang
D. A. Shiau
M. Dashiell
J. Beausang
G. Nichols
Publication date: 7 June 2004
Publisher: Lockheed Martin Corporation, Schenectady, NY (United States)
Doi

Abstract

After a brief introduction and work motivation, static and dynamic methods for minority carrier lifetime measurements will be compared. Data on recombination velocity at heterointerfaces for both p-type and n-type quaternaries will be summarized. Radiative recombination and effect of photon recycling will be considered in detail

Similar works

Full text

Open in the Core reader

Download PDF

UNT (University of North Texas) Digital Library

info:ark/67531/metadc789042

Last time updated on 21/11/2016Provided by our Sustaining member

This paper was published in UNT (University of North Texas) Digital Library.

Having an issue?

Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.