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Minority-carrier transport in InGaAsSb thermophotovoltaic diodes

By R.U. Martinelli, D.Z. Garbuzov, H. Lee, N. Morris, T. Odubanjo and J.C. Connolly

Abstract

Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 {micro}m) bandgaps exhibit external quantum efficiencies of 59% at 2 {micro}m. The devices have electron diffusion lengths as long as 29 {micro}m in 8-{micro}m-wide p-InGaAsSb layers and hole diffusion lengths of 3 {micro}m in 6-{micro}m-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths. At 632.8 nm the internal quantum efficiencies of diodes with 1- to 8-{micro}m-wide p-layers are above 89% and are independent of the p-layer width, indicating long electron diffusion lengths. InGaAsSb has, therefore, excellent minority carrier transport properties that are well suited to efficient TPV diode operation. The structures were grown by molecular-beam epitaxy

Topics: 30 Direct Energy Conversion, Indium Arsenides, Quantum Efficiency, 36 Materials Science, Indium Antimonides, Thermophotovoltaic Converters, Diffusion Length, Experimental Data, Gallium Antimonides, Electrical Properties, Carrier Mobility, Gallium Arsenides
Publisher: Knolls Atomic Power Laboratory
Year: 1997
DOI identifier: 10.2172/319871
OAI identifier:
Provided by: UNT Digital Library
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