Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

Wu, X.Y.; Wang, K.; Pan, W.W.; Wang, P.; Li, Y.Y.; Song, Y.X.; Gu, Y.; Yue, L.; Xu, H.; Zhang, Z.P.; Cui, J.; Gong, Q.; Wang, Shumin

journal article

oai:publications.lib.chalmers.se:219986

Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

Authors: X.Y. Wu
K. Wang
W.W. Pan
P. Wang
Y.Y. Li
Y.X. Song
Y. Gu
L. Yue
H. Xu
Z.P. Zhang
J. Cui
Q. Gong
Shumin Wang
Publication date: 2015
Publisher
Doi

Abstract

The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions

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Last time updated on 19/11/2016

This paper was published in Chalmers Publication Library.

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