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Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

By Ting-Ting KANG, Masatomo YAMAMOTO, Mikiyasu TANAKA, Akihiro HASHIMOTO, Akio YAMAMOTO, 亭亭 康, 政智 山本, 幹康 田中, 明弘 橋本 and 暠勇 山本

Abstract

Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition using trimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, the effects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction are investigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e., enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorily shown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1−xN can be tuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation are analyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we propose a phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow

Publisher: American Institute of Physics
Year: 2009
DOI identifier: 10.1063/1.3212969
OAI identifier: oai:karin11:10098/2162

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