CuInAl metallic precursor films were selenised at different temperatures and the migration of the elements investigated. GD-OES was used to determine the elemental depth profiles, and XRD analysis gave an insight into the phase transformations taking place. These combined techniques made it possible to study the diffusion and reaction processes taking place during the selenisation stage. Post selenisation annealing was also investigated, which led to partial incorporation of the Al into the CuInSe2 lattice
Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.