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Fabrication and characterization of sub-500 nm channel organic field effect transistor using UV nanoimprint lithography with cheap Si-mold

By L. Teng, R. Kirchner, M. Plötner, A. Türke, A. Jahn, J. He, F. Hagemann and W.-J. Fischer

Abstract

P-type poly (3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) with channel length down to 500 nm were fabricated. The gold source and drain electrodes were patterned using UV-based nanoimprint lithography and a lift-off process. To reduce mold costs, an opaque silicon nanoimprint-mold was used instead of expensive quartz molds for UV-nanoimprint. This new technique, called non-transparent UV-nanoimprint lithography, can be applied due to the impact of indirectly propagating light. Finally, the electrical performance of OFETs was tested. However, the OFETs with short channels show inhibited saturation ability and a weak gate control. The reasons for this short channel effect were discussed

Year: 2012
DOI identifier: 10.1016/j.mee.2012.04.004
OAI identifier: oai:fraunhofer.de:N-206501
Provided by: Fraunhofer-ePrints
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