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On the mechanism of potential-induced degradation in crystalline silicon solar cells

By J. Bauer, V. Naumann, S. Grosser, C. Hagendorf, M. Schütze and O. Breitenstein

Abstract

Multicrystalline standard p-type silicon solar cells, which undergo a potential induced degradation, are investigated by different methods to reveal the cause of the degradation. Microscopic local ohmic shunts are detected by electron-beam-induced current measurements, which correlate with the sodium distribution in the nitride layer close to the Si surface imaged by time-of-flight secondary ion mass spectroscopy. The results are compatible with a model of the formation of a charge double layer on or in the nitride, which inverts the emitter

Year: 2012
DOI identifier: 10.1002/pssr.201206276
OAI identifier: oai:fraunhofer.de:N-217051
Provided by: Fraunhofer-ePrints
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