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GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects

By Crupi G., Raffo A., Schreurs D.M.M., Avolio G., Vadala V., Di Falco S., Caddemi A. and Vannini G.

Abstract

The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power amplifier design. In particular, the model should be able to reproduce the microwave device behaviour under realistic operating conditions. In light of that, we present a technique for extracting a large-signal GaN HEMT equivalent circuit, which includes both low-frequency dispersive phenomena and high-frequency non-quasi-static effects

Publisher: IEEE
Year: 2011
OAI identifier: oai:iris.unife.it:11392/1673878
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