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A distributed approach for millimetre-wave electron device modelling

By D. RESCA, A.SANTARELLI, A.RAFFO, R.CIGNANI, G.VANNINI, F.FILICORI and A.CIDRONALI

Abstract

Electron device modelling at very high frequencies needs, as a preliminary step, the identification of suitable parasitic elements mainly describing the passive structure used for accessing the intrinsic device. However, when dealing with device modelling at millimetre-wave frequencies conventional lumped parasitic networks necessarily become less adequate in describing inherently distributed parasitic phenomena. In this paper, a distributed approach is adopted for the modelling of the parasitic network and a new identification procedure, based on electromagnetic simulation and conventional S-parameter measurements, is proposed. The intrinsic device, obtained after de-embedding from the distributed parasitic network, is particularly suitable for the extraction of accurate nonlinear models. Preliminary validation results are provided in the pape

Publisher: IEEE - Institute of Electrical and Electronics Engineers
Year: 2006
OAI identifier: oai:iris.unife.it:11392/1196420
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