Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique

Abstract

In this work charge trapping in SiO2/Al2O3 dielectric stacks is characterized by means of pulsed capacitance-voltage measurements. The proposed technique, strongly reduces the measurement time and, as a consequence, the impact of charge trapping on the measurement results. Flat band voltage shift and fast current transient during short stress pulses are systematically monitored and modeling is presented, which allows for the extraction of the amount and centroid of trapped charg