Melanin layer on silicon: an attractive structure for a possible exploitation in bio-polymer based metal-insulator-silicon devices

Abstract

Synthetic melanin based metal-insulator-semiconductor devices are fabricated for the first time thanks to silicon surface wettability modification by using dielectric barrier discharge plasma. Ambipolar charge trapping in air and ion drift mechanisms under vacuum are identified by capacitance-voltage hysteresis loops. These results aim to foresee the possible integration of synthetic melanin layers as a novel capacitor in organic polymer based devices